Disclosed is a semiconductor package comprising a semiconductor chip, an external connection member on the semiconductor chip, and a dielectric film between the semiconductor chip and the external connection member. The semiconductor chip includes a substrate, a front-end-of-line structure on the substrate, and a back-end-of-line structure on the front-end-of-line structure. The back-end-of-line structure includes metal layers stacked on the front-end-of-line structure, a first dielectric layer on the uppermost metal layer and including a contact hole that vertically overlaps a pad of an uppermost metal layer, a redistribution line on the first dielectric layer and including a contact part in the contact hole and electrically connected to the pad, a pad part, and a line part that electrically connects the contact part to the pad part, and an upper dielectric layer on the redistribution line.

An object of the present technology is to prevent damage in a bonded portion between a semiconductor chip and a substrate in a semiconductor device in which the semiconductor chip is mounted on the substrate.

A terminal is disposed between an electrode of an element and an electrode of a substrate on which the element is mounted, and electrically connects the electrode of the element and the electrode of the substrate. The terminal includes a plurality of unit lattices and a coupling portion. The unit lattices included in the terminal are formed by bonding a plurality of beams in a cube shape. The coupling portion included in the terminal couples adjacent unit lattices among the plurality of unit lattices.

A display apparatus including a circuit board, at least one LED stack configured to emit light, electrode pads disposed on the at least one LED stack and electrically connected to the at least one LED stack, and electrodes disposed on the electrode pads and electrically connected to the electrode pads, respectively, in which each of the electrodes has a fixed portion that is fixed to one of the electrode pads and an extending portion that is spaced apart from the one of the electrode pads, and the electrodes include at least two metal layers having different thermal expansion coefficients from each other.

The present disclosure provides a supporting substrate, including: a base substrate and a plurality of connecting electrodes provided on the base substrate, wherein a clamping electrode is provided on a side of at least one of the connecting electrodes facing away the base substrate, the clamping electrode is electrically connected with a corresponding connecting electrode and configured to be capable of clamping and fixing an electrode pin of the micro-light emitting device. The present disclosure also provides a manufacturing method for the supporting substrate, and a backplane.

A chip includes a semiconductor substrate, an electrical connector over the semiconductor substrate, and a molding compound molding a lower part of the electrical connector therein. A top surface of the molding compound is lower than a top end of the electrical connector. A recess extends from the top surface of the molding compound into the molding compound.

A manufacturing method of an electronic apparatus is provided, and the manufacturing method includes following steps. A substrate is provided. A plurality of first bonding pads are formed on the substrate. A plurality of electronic devices are provided, and each of the electronic devices includes at least one second bonding pad. The second bonding pads of the electronic devices corresponding to the first bonding pads are laminated onto the corresponding first bonding pads on the substrate, so as to bond the electronic devices to the substrate. The corresponding first and second bonding pads respectively have bonding surfaces with different surface topographies. The manufacturing method of the electronic apparatus is capable of reducing short circuit during a bonding process or improving a bonding yield.

A semiconductor device includes a substrate includes a first layer and a second layer over the first layer, a bump disposed over the second layer, a molding disposed over the second layer and surrounding the bump, and a retainer disposed over the second layer, wherein the retainer is disposed between the molding and a periphery of the substrate. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing several bumps on the substrate, disposing a retainer on the substrate and surrounding the bumps, and disposing a molding between the bumps and the retainer.

Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

Semiconductor devices including continuous-core connectors and associated systems and methods are disclosed herein. The continuous-core connectors each include a peripheral wall that surrounds an inner-core configured to provide an electrical path using uniform material.

At least one unit transistor is arranged over a substrate. A first wiring as a path of current that flows to each unit transistor is arranged over the at least one unit transistor. An inorganic insulation film is arranged over the first wiring. At least one first opening overlapping a partial region of the first wiring in a plan view is provided in the inorganic insulation film. An organic insulation film is arranged over the inorganic insulation film. A second wiring coupled to the first wiring through the first opening is arranged over the organic insulation film and the inorganic insulation film. In a plan view, a region in which the organic insulation film is not arranged is provided outside a region in which the first wiring is arranged. The second wiring is in contact with the inorganic insulation film outside the region in which the first wiring is arranged.