A unit pixel including a first light emitting stack; a second light emitting stack disposed under the first light emitting stack, and having an area greater than that of the first light emitting stack; a third light emitting stack disposed under the second light emitting stack, and having an area greater than that of the second light emitting stack, in which at least one of the first through third light emitting stacks includes a side surface having an inclination angle within a range of about 30 degrees to about 70 degrees with respect to a first plane parallel to a top surface of the third light emitting stack.

An integrated circuit structure comprises one or more first level interconnects (FLIs) embedded in an underfill (UF) over a substrate. An etch stop layer is over the FLIs. A passivation layer is over the etch stop layer and a plurality of vias are through the passivation layer. A plurality of contacts are on the passivation layer in contact with the vias to connect with the FLI. A plurality of topological crack stop (TCS) features are formed in the passivation layer and on a top surface of the etch stop layer.

Structures and methods for reducing thermal expansion mismatch during chip scale packaging are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes a first metal layer over a substrate, a dielectric region, and a polymer region. The first metal layer comprises a first device metal structure. The dielectric region is formed over the first metal layer. The polymer region is formed over the dielectric region. The dielectric region comprises a plurality of metal layers and an inter-metal dielectric layer comprising dielectric material between each pair of two adjacent metal layers in the plurality of metal layers. Each of the plurality of metal layers comprises a dummy metal structure over the first device metal structure. The dummy metal structures in each pair of two adjacent metal layers in the plurality of metal layers shield respectively two non-overlapping portions of the first device metal structure from a top view of the semiconductor structure.

According to an aspect of the inventive concept, there is provided a die-to-wafer bonding structure including a die having a first test pad, a first bonding pad formed on the first test pad, and a first insulating layer, the first bonding pad penetrates the first insulating layer. The structure may further include a wafer having a second test pad, a second bonding pad formed on the second test pad, and a second insulating layer, the second bonding pad penetrates the second insulating layer. The structure may further include a polymer layer surrounding all side surfaces of the first bonding pad and all side surfaces of the second bonding pad, the polymer layer being arranged between the die and the wafer. Additionally, the wafer and the die may be bonded together.

An integrated circuit package may be formed comprising a substrate that includes a mold material layer and a signal routing layer, wherein the mold material layer comprises at least one bridge and at least one foam structure embedded in a mold material. In one embodiment, the substrate may include the mold material of the mold material layer filling at least a portion of cells within the foam structure. In a further embodiment, at least two integrated circuit devices may be attached to the substrate, such that the bridge provides device-to-device interconnection between the at least two integrated circuit devices. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board.

Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

A component includes a plurality of electrical connections on a process side opposed to a back side of the component. Each electrical connection includes an electrically conductive multi-layer connection post protruding from the process side. A printed structure includes a destination substrate and one or more components. The destination substrate has two or more electrical contacts and each connection post is in contact with, extends into, or extends through an electrical contact of the destination substrate to electrically connect the electrical contacts to the connection posts. The connection posts or electrical contacts are deformed. Two or more connection posts can be electrically connected to a common electrical contact.

A semiconductor package includes a lower redistribution layer including an insulating pattern having an opening and a via in the opening; a first semiconductor chip including a chip pad, a passivation layer, and a pad bump connected to the chip pad; and a first encapsulant on the lower redistribution layer and the first semiconductor chip. The opening defines a lower surface and a side surface of the pad bump, and the via is in physical contact with the lower surface and the side surface of the pad bump.

A fan-out semiconductor package includes a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole of the first interconnection member and having an active surface having connection pads disposed thereon and an inactive surface opposite the active surface; an encapsulant encapsulating at least some portions of the first interconnection member and the semiconductor chip; and a second interconnection member disposed on the first interconnection member and the semiconductor chip. The first interconnection member and the second interconnection member respectively include a plurality of redistribution layers electrically connected to the connection pads of the semiconductor chip, and the semiconductor chip has a groove defined in the active surface and between a peripheral edge of the semiconductor chip and the connection pads of the semiconductor chip.

A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole of the first interconnection member and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the semiconductor chip; a second interconnection member disposed on the first interconnection member and the semiconductor chip; and connection terminals disposed on the second interconnection member. The first interconnection member and the second interconnection member respectively include redistribution layers electrically connected to the connection pads of the semiconductor chip, and a connection pad and a connection terminal are electrically connected to each other by a pathway passing through the redistribution layer of the first interconnection member.