A semiconductor package comprises a substrate, a pad, a first isolation layer, an interconnection layer, and a conductive post. The substrate has a first surface and a second surface opposite the first surface. The pad has a first portion and a second portion on the first surface of the substrate. The first isolation layer is disposed on the first surface and covers the first portion of the pad, and the first isolation layer has a top surface. The interconnection layer is disposed on the second portion of the pad and has a top surface. The conductive post is disposed on the top surface of the first isolation layer and on the top surface of the interconnection layer. The top surface of the first isolation layer and the top surface of the interconnection layer are substantially coplanar.

Methods, techniques, and structures relating to die packaging. In one exemplary implementation, a die package interconnect structure includes a semiconductor substrate and a first conducting layer in contact with the semiconductor substrate. The first conducting layer may include a base layer metal. The base layer metal may include Cu. The exemplary implementation may also include a diffusion barrier in contact with the first conducting layer and a wetting layer on top of the diffusion barrier. A bump layer may reside on top of the wetting layer, in which the bump layer may include Sn, and Sn may be electroplated. The diffusion barrier may be electroless and may be adapted to prevent Cu and Sn from diffusing through the diffusion barrier. Furthermore, the diffusion barrier may be further adapted to suppress a whisker-type formation in the bump layer.

Provided is a substrate structure, including: a substrate body having a conductive contact; an insulating layer formed on the substrate body with the conductive contact exposed therefrom; and an insulating protection layer formed on a portion of a surface of the insulating layer, and having a plurality of openings corresponding to the conductive contact, wherein at least one of the openings is disposed at an outer periphery of the conductive contact. Accordingly, the insulating protection layer uses the openings to dissipate and disperse residual stresses in a manufacturing process of high operating temperatures.

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure includes a conductive structure formed in the trench and on the protection layer. The conductive structure is electrically connected to the conductive pad, and the conductive structure has a concave top surface, and the lowest point of the concave top surface is higher than the top surface of the protection layer.

A semiconductor device includes a carrier, an under bump metallurgy (UBM) pad on the carrier, and a post on a surface of the UBM pad. In some embodiments, a height of the post to a longest length of the UBM pad is between about 0.25 and about 0.7. A method of manufacturing a semiconductor device includes providing a carrier, disposing a UBM pad on the carrier and forming a post on the UBM pad.

A semiconductor device includes a carrier, an under bump metallurgy (UBM) pad on the carrier, and a post on a surface of the UBM pad. In some embodiments, a height of the post to a longest length of the UBM pad is between about 0.25 and about 0.7. A method of manufacturing a semiconductor device includes providing a carrier, disposing a UBM pad on the carrier and forming a post on the UBM pad.

Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having a mixed under-bump metallization (UBM) size and pitch on a single die. A first set of UBMs having a first total plateable surface area is formed on a first region of a die. A second set of UBMs having an equal total plateable surface area is formed on a second region of the die. A solder bump having a calculated solder height is applied to a plateable surface of each UBM. The solder height is calculated such that a volume of solder in the first region is equal to a volume of solder in the second region.

A mechanism of a semiconductor structure with composite barrier layer under redistribution layer is provided. A semiconductor structure includes a substrate comprising a top metal layer on the substrate; a passivation layer over the top metal layer having an opening therein exposing the top metal layer; a composite barrier layer over the passivation layer and the opening, the composite barrier layer includes a center layer, a bottom layer, and an upper layer, wherein the bottom layer and the upper layer sandwich the center layer; and a redistribution layer (RDL) over the composite barrier layer and electrically connecting the underlying top metal layer.

A fan-out wafer level package includes a semiconductor die with a redistribution layer on a sidewall of the semiconductor die. A redistribution layer positioned over the die includes an extended portion that extends along the sidewall. The semiconductor die is encapsulated in a molding compound layer. The molding compound layer is positioned between the extended portion of the redistribution layer and the sidewall of the semiconductor die. Solder contacts, for electrically connecting the semiconductor device to an electronic circuit board, are positioned on the redistribution layer. The solder contacts and the sidewall of the redistribution layer can provide electrical contact on two different locations. Accordingly, the package can be used to improve interconnectivity by providing vertical and horizontal connections.

The disclosure relates to a semiconductor structure, including: a substrate, a bonding pad, a first protective layer, a redistribution layer, a connecting plug, bumps, and a second protective layer. The redistribution layer includes a first metal line and a second metal line. Since the second metal line and the first metal line are of the same height, so the bumps on the first metal line and the second metal line are equivalently formed on the same layer. The coplanarity of the bumps on the metal lines is relatively high. The second metal line does not make any electrical connection to the pad so the bumps formed on the second metal line do not play a conductive role. When the substrate warps, the stress is transferred to the first protective layer. Thus, bumps in the substrate made according to the present application are coplanar, which reduces the probability of poor wetting when flip-chip package on the substrate, and improves the reliability of the entire package.