A semiconductor structure includes a first substrate including a first contact structure located on a first pad, and a second substrate including a second contact structure on a second pad. The first contact structure includes a first metal base layer covered by a first nano-twinned metal coating layer. The second contact structure includes a second nano-twinned metal coating layer on the second pad. The first contact structure is connected to the second contact structure, thereby forming a bonding interface between the first nano-twinned metal coating layer and the second nano-twinned metal coating layer.

A stacked semiconductor device encompasses a mother-plate having a mounting-main surface and a bottom-main surface, an onboard-element having a connection face facing to the mounting-main surface, a parent bump provided on the mother-plate, having a mother-site wall made of a layer of conductor, mother-site wall is perpendicular to the mounting-main surface, and a repair bump provided on the onboard-element at a side of the connection face, having a repair-site wall made of a layer of conductor having different hardness from the mother-site wall, the repair-site wall is perpendicular to the connection face, configure to bite each other with the parent bump at an intersection between the mother-site wall and the repair-site wall conductor.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

An integrated circuit package and a system including the integrated circuit package as well as a process for assembling the integrated circuit package are provided to improve integrated circuit power delivery. The integrated circuit package includes a first die having a plurality of pads formed in the first die and exposed on a top surface of the first die, at least one post on the first die, and a substrate including one or more redistribution layers. Each post in the at least one post spans at least two pads on the first die utilized for power distribution, and the first die is connected to the substrate via the at least one post.

Semiconductor devices having interconnect structures with conductive elements configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include a plurality of conductive elements made of a first conductive material having a first elastic modulus. The pillar structure can further include a continuous region of a second conductive material at least partially surrounding the plurality of conductive elements. The second conductive material can have a second elastic modulus less than the first elastic modulus.

An integrated circuit package and a system including the integrated circuit package as well as a process for assembling the integrated circuit package are provided to improve integrated circuit power delivery. The integrated circuit package includes a first die having a plurality of pads formed in the first die and exposed on a top surface of the first die, at least one post on the first die, and a substrate including one or more redistribution layers. Each post in the at least one post spans at least two pads on the first die utilized for power distribution, and the first die is connected to the substrate via the at least one post.

Direct copper-copper bonding at low temperatures is achieved by electroplating copper features on a substrate followed by electroplanarizing the copper features. The copper features are electroplated on the substrate under conditions so that nanotwinned copper structures are formed. Electroplanarizing the copper features is performed by anodically biasing the substrate and contacting the copper features with an electrolyte so that copper is electrochemically removed. Such electrochemical removal is performed in a manner so that roughness is reduced in the copper features and substantial coplanarity is achieved among the copper features. Copper features having nanotwinned copper structures, reduced roughness, and better coplanarity enable direct copper-copper bonding at low temperatures.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

A bump structure with a barrier layer, and a method for manufacturing the bump structure, are provided. In some embodiments, the bump structure comprises a conductive pad, a conductive bump, and a barrier layer. The conductive pad comprises a pad material. The conductive bump overlies the conductive pad, and comprises a lower bump layer and an upper bump layer covering the lower bump layer. The barrier layer is configured to block movement of the pad material from the conductive pad to the upper bump layer along sidewalls of the lower bump layer. In some embodiments, the barrier layer is a spacer lining the sidewalls of the lower bump layer. In other embodiments, the barrier layer is between the barrier layer and the conductive pad, and spaces the sidewalls of the lower bump layer from the conductive pad.

Semiconductor devices having interconnect structures with conductive elements configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include a plurality of conductive elements made of a first conductive material having a first elastic modulus. The pillar structure can further include a continuous region of a second conductive material at least partially surrounding the plurality of conductive elements. The second conductive material can have a second elastic modulus less than the first elastic modulus.