A nanowire bonding interconnect for fine-pitch microelectronics is provided. Vertical nanowires created on conductive pads provide a debris-tolerant bonding layer for making direct metal bonds between opposing pads or vias. Nanowires may be grown from a nanoporous medium with a height between 200-1000 nanometers and a height-to-diameter aspect ratio that enables the nanowires to partially collapse against the opposing conductive pads, creating contact pressure for nanowires to direct-bond to opposing pads. Nanowires may have diameters less than 200 nanometers and spacing less than 1 m from each other to enable contact or direct-bonding between pads and vias with diameters under 5 m at very fine pitch. The nanowire bonding interconnects may be used with or without tinning, solders, or adhesives. A nanowire forming technique creates a nanoporous layer on conductive pads, creates nanowires within pores of the nanoporous layer, and removes at least part of the nanoporous layer to reveal a layer of nanowires less than 1 m in height for direct bonding.

A bump structure with a barrier layer, and a method for manufacturing the bump structure, are provided. In some embodiments, the bump structure comprises a conductive pad, a conductive bump, and a barrier layer. The conductive pad comprises a pad material. The conductive bump overlies the conductive pad, and comprises a lower bump layer and an upper bump layer covering the lower bump layer. The barrier layer is configured to block movement of the pad material from the conductive pad to the upper bump layer along sidewalls of the lower bump layer. In some embodiments, the barrier layer is a spacer lining the sidewalls of the lower bump layer. In other embodiments, the barrier layer is between the barrier layer and the conductive pad, and spaces the sidewalls of the lower bump layer from the conductive pad.

A semiconductor device includes a first semiconductor die package. The first semiconductor package includes a molding compound, and a conductive element in the molding compound, wherein a top surface of the conductive element is above or co-planar with a top-most surface of the molding compound. The semiconductor device further includes a second semiconductor die package The second semiconductor package includes a plurality of copper-containing contacts on a single metal pad, wherein each of the plurality of copper-containing contacts is bonded to the conductive element.

A bump structure with a barrier layer, and a method for manufacturing the bump structure, are provided. In some embodiments, the bump structure comprises a conductive pad, a conductive bump, and a barrier layer. The conductive pad comprises a pad material. The conductive bump overlies the conductive pad, and comprises a lower bump layer and an upper bump layer covering the lower bump layer. The barrier layer is configured to block movement of the pad material from the conductive pad to the upper bump layer along sidewalls of the lower bump layer. In some embodiments, the barrier layer is a spacer lining the sidewalls of the lower bump layer. In other embodiments, the barrier layer is between the barrier layer and the conductive pad, and spaces the sidewalls of the lower bump layer from the conductive pad.

A composite bump includes a plurality of first bumps that is metal-bonded to an electrode pad of a semiconductor chip, and a second bump that is metal-bonded to the plurality of first bumps. A method for forming a composite bump, includes forming a plurality of first bumps to be metal-bonded to an electrode pad of a semiconductor chip, and forming a second bump to be metal-bonded to the plurality of first bumps.

A method of forming a semiconductor device includes preparing a first semiconductor die package with conductive elements embedded in a molding compound, wherein the conductive elements are exposed on a surface of the molding compound. A top surface of the conductive elements is above or co-planar with a top-most surface of the molding compound. The method further includes providing a second semiconductor die package; and bonding the conductive elements of the first semiconductor die package to contacts on the semiconductor die package.

Provided is a multilayer substrate including laminated semiconductor substrates each having a penetrating hole (hereinafter referred to as through hole) having a plated film formed in the inner surface. The multilayer substrate has excellent conduction characteristics and can be manufactured at low cost. Conductive particles are selectively present at a position where the through holes face each other as viewed in a plan view of the multilayer substrate. The multilayer substrate has a connection structure in which the facing through holes are connected by the conductive particles, and the semiconductor substrates each having the through hole are bonded by an insulating adhesive.

The present disclosure provides a driving substrate and a manufacturing method thereof, and a micro LED bonding method. The driving substrate includes: a base substrate; a driving function layer provided on the base substrate, and including a plurality of driving thin film transistors and a plurality of common electrode lines; a pad layer including a plurality of pads provided on a side of the driving function layer away from the base substrate, each pad including a pad body and a microstructure of hard conductive material provided on a side of the pad body away from the base substrate; and a plurality of buffer structures provided on the side of the driving function layer away from the base substrate, each buffer structure surrounding a portion of a corresponding microstructure close to the base substrate, and a height of the buffer structure being lower than a height of the microstructure.

A bump structure with a barrier layer, and a method for manufacturing the bump structure, are provided. In some embodiments, the bump structure comprises a conductive pad, a conductive bump, and a barrier layer. The conductive pad comprises a pad material. The conductive bump overlies the conductive pad, and comprises a lower bump layer and an upper bump layer covering the lower bump layer. The barrier layer is configured to block movement of the pad material from the conductive pad to the upper bump layer along sidewalls of the lower bump layer. In some embodiments, the barrier layer is a spacer lining the sidewalls of the lower bump layer. In other embodiments, the barrier layer is between the barrier layer and the conductive pad, and spaces the sidewalls of the lower bump layer from the conductive pad.

A system and method for preventing cracks is provided. An embodiment comprises placing crack stoppers into a connection between a semiconductor die and a substrate. The crack stoppers may be in the shape of hollow or solid cylinders and may be placed so as to prevent any cracks from propagating through the crack stoppers.