A semiconductor device package includes a semiconductor device with a ball grid array having a first subset of solder balls composed of metallic solder, and a second subset of solder balls composed of a composite material that includes a polymer core surrounded by a solder layer. The solder balls of the second subset can have a lower elastic modulus than the solder balls of the first subset and resist cracking due to thermal stresses on the semiconductor device package. In one embodiment, at least a portion of the second subset of solder balls is located on the periphery of the ball grid array such that the first subset of solder balls may be surrounded, at least partially, by the second subset of solder balls.

An electronic component comprising: an electronic substrate that includes an electronic element and a first connection terminal a package member that is disposed on the electronic substrate; and a circuit member that includes a second connection terminal, wherein the circuit member is disposed between the package member and the electronic substrate, and extends from the position between the package member and the electronic substrate outward beyond the edge of the electronic substrate; the electronic component includes a connecting member that is disposed between the circuit member and the electronic substrate, and electrically connects the second connection terminal and the first connection terminal, an adhesive member that is disposed between the circuit member and the package member, and joins the circuit member to the package member; the connecting member, the circuit member, and the adhesive member are located between the package member and the electronic substrate.

An electronic component comprising: an electronic substrate that includes an electronic element and a first connection terminal a package member that is disposed on the electronic substrate; and a circuit member that includes a second connection terminal, wherein the circuit member is disposed between the package member and the electronic substrate, and extends from the position between the package member and the electronic substrate outward beyond the edge of the electronic substrate; the electronic component includes a connecting member that is disposed between the circuit member and the electronic substrate, and electrically connects the second connection terminal and the first connection terminal, an adhesive member that is disposed between the circuit member and the package member, and joins the circuit member to the package member; the connecting member, the circuit member, and the adhesive member are located between the package member and the electronic substrate.

An electrical component including a substrate, a first dielectric layer on the substrate, a redistribution layer pad on the first dielectric layer, and a component interconnection element on the redistribution layer pad so that the component interconnection element fills an opening in the second dielectric layer. The opening includes at least one protrusion between the component interconnection element solder ball metallization and the redistribution layer pad.

An electronic component comprising: an electronic substrate that includes an electronic element and a first connection terminal a package member that is disposed on the electronic substrate; and a circuit member that includes a second connection terminal, wherein the circuit member is disposed between the package member and the electronic substrate, and extends from the position between the package member and the electronic substrate outward beyond the edge of the electronic substrate; the electronic component includes a connecting member that is disposed between the circuit member and the electronic substrate, and electrically connects the second connection terminal and the first connection terminal, an adhesive member that is disposed between the circuit member and the package member, and joins the circuit member to the package member; the connecting member, the circuit member, and the adhesive member are located between the package member and the electronic substrate.

An electronic component comprising: an electronic substrate that includes an electronic element and a first connection terminal a package member that is disposed on the electronic substrate; and a circuit member that includes a second connection terminal, wherein the circuit member is disposed between the package member and the electronic substrate, and extends from the position between the package member and the electronic substrate outward beyond the edge of the electronic substrate; the electronic component includes a connecting member that is disposed between the circuit member and the electronic substrate, and electrically connects the second connection terminal and the first connection terminal, an adhesive member that is disposed between the circuit member and the package member, and joins the circuit member to the package member; the connecting member, the circuit member, and the adhesive member are located between the package member and the electronic substrate.

The present disclosure relates to a radio frequency device that includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion, first bump structures, a first mold compound, and a second mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The BEOL portion is formed underneath the FEOL portion, and the first bump structures and the first mold compound are formed underneath the BEOL portion. Each first bump structure is partially encapsulated by the first mold compound, and electrically coupled to the FEOL portion via connecting layers within the BEOL portion. The second mold compound resides over the active layer without a silicon material, which has a resistivity between 5 Ohm-cm and 30000 Ohm-cm, in between.

An optical module includes an optical semiconductor chip including a first electrode pad, a second electrode pad, and a third electrode pad arranged between the first electrode pad and the second electrode pad, a wiring substrate on which the optical semiconductor chip is flip-chip mounted, including a fourth electrode pad, a fifth electrode pad, and a sixth electrode pad arranged between the fourth electrode pad and the fifth electrode pad, a first conductive material connecting the first electrode pad with the fourth electrode pad, a second conductive material connecting the second electrode pad with the fifth electrode pad, a third conductive material arranged between the first conductive material and the second conductive material, connecting the third electrode pad with the sixth electrode pad, and a resin provided in an area on the second conductive material side of the third conductive material between the optical semiconductor chip and the wiring substrate.

An optical module includes an optical semiconductor chip including a first electrode pad, a second electrode pad, and a third electrode pad arranged between the first electrode pad and the second electrode pad, a wiring substrate on which the optical semiconductor chip is flip-chip mounted, including a fourth electrode pad, a fifth electrode pad, and a sixth electrode pad arranged between the fourth electrode pad and the fifth electrode pad, a first conductive material connecting the first electrode pad with the fourth electrode pad, a second conductive material connecting the second electrode pad with the fifth electrode pad, a third conductive material arranged between the first conductive material and the second conductive material, connecting the third electrode pad with the sixth electrode pad, and a resin provided in an area on the second conductive material side of the third conductive material between the optical semiconductor chip and the wiring substrate.

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-κ dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include (a) a metal lattice extending laterally between the bond pad and the semiconductor substrate and (b) barrier members extending vertically between the metal lattice and the bond pad.