A technique relates to a semiconductor device. First nanowires are formed on a first substrate, the first nanowires being electrically coupled to one or more first electrical sites on the first substrate. Second nanowires are formed on a second substrate, the second nanowires being electrically coupled to one or more second electrical sites on the second substrate. The first nanowires and the second nanowires are electrically coupled such that the one or more first electrical sites are electrically coupled to the one or more second electrical sites.

A technique relates to a semiconductor device. First nanowires are formed on a first substrate, the first nanowires being electrically coupled to one or more first electrical sites on the first substrate. Second nanowires are formed on a second substrate, the second nanowires being electrically coupled to one or more second electrical sites on the second substrate. The first nanowires and the second nanowires are electrically coupled such that the one or more first electrical sites are electrically coupled to the one or more second electrical sites.

Disclosed are interconnects in which one substrate having a high melting temperature, lead-free solder column is joined to a second substrate having openings filled with a low melting temperature, lead-free solder such that the high melting temperature, lead-free solder column penetrates into the low melting temperature, lead-free solder so as to obtain a short moment arm of solder.

Disclosed are interconnects in which one substrate having a high melting temperature, lead-free solder column is joined to a second substrate having openings filled with a low melting temperature, lead-free solder such that the high melting temperature, lead-free solder column penetrates into the low melting temperature, lead-free solder so as to obtain a short moment arm of solder.

A microelectronic device has a bump bond structure including an electrically conductive pillar with an expanded head, and solder on the expanded head. The electrically conductive pillar includes a column extending from an I/O pad to the expanded head. The expanded head extends laterally past the column on at least one side of the electrically conductive pillar. In one aspect, the expanded head may have a rounded side profile with a radius approximately equal to a thickness of the expanded head, and a flat top surface. In another aspect, the expanded head may extend past the column by different lateral distances in different lateral directions. In a further aspect, the expanded head may have two connection areas for making electrical connections to two separate nodes. Methods for forming the microelectronic device are disclosed.

A microelectronic device has a bump bond structure including an electrically conductive pillar with an expanded head, and solder on the expanded head. The electrically conductive pillar includes a column extending from an I/O pad to the expanded head. The expanded head extends laterally past the column on at least one side of the electrically conductive pillar. In one aspect, the expanded head may have a rounded side profile with a radius approximately equal to a thickness of the expanded head, and a flat top surface. In another aspect, the expanded head may extend past the column by different lateral distances in different lateral directions. In a further aspect, the expanded head may have two connection areas for making electrical connections to two separate nodes. Methods for forming the microelectronic device are disclosed.

Embodiments relate to the design of a device capable of increasing the electrical performance of an interconnect feature by amplifying the current carrying capacity of an interconnect feature. The device comprises a first body comprising a first surface with at least one nanoporous conductive structure protruding from the first surface. The device further comprises a second body comprising a second surface with arrays of nanofibers extending from the second surface and penetrating into corresponding nanoporous conductive structures to form conductive pathways between the first body and the second body.

Embodiments relate to the design of a device capable of increasing the electrical performance of an interconnect feature by amplifying the current carrying capacity of an interconnect feature. The device comprises a first body comprising a first surface with at least one nanoporous conductive structure protruding from the first surface. The device further comprises a second body comprising a second surface with arrays of nanofibers extending from the second surface and penetrating into corresponding nanoporous conductive structures to form conductive pathways between the first body and the second body.

A microelectronic device has a bump bond structure including an electrically conductive pillar with an expanded head, and solder on the expanded head. The electrically conductive pillar includes a column extending from an I/O pad to the expanded head. The expanded head extends laterally past the column on at least one side of the electrically conductive pillar. In one aspect, the expanded head may have a rounded side profile with a radius approximately equal to a thickness of the expanded head, and a flat top surface. In another aspect, the expanded head may extend past the column by different lateral distances in different lateral directions. In a further aspect, the expanded head may have two connection areas for making electrical connections to two separate nodes. Methods for forming the microelectronic device are disclosed.

A microelectronic device has a bump bond structure including an electrically conductive pillar with an expanded head, and solder on the expanded head. The electrically conductive pillar includes a column extending from an I/O pad to the expanded head. The expanded head extends laterally past the column on at least one side of the electrically conductive pillar. In one aspect, the expanded head may have a rounded side profile with a radius approximately equal to a thickness of the expanded head, and a flat top surface. In another aspect, the expanded head may extend past the column by different lateral distances in different lateral directions. In a further aspect, the expanded head may have two connection areas for making electrical connections to two separate nodes. Methods for forming the microelectronic device are disclosed.