Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.

A semiconductor device includes a semiconductor die having a first main face, a second main face and side faces connecting the first main face and the second main face. The semiconductor device also includes a conductive column arranged on the first main face of the semiconductor die and electrically coupled to the semiconductor die, and an insulating body arranged on the first main face of the semiconductor die. The insulating body has an upper main face and side faces. The upper main surface of the insulating body is coplanar with a top face of the conductive pillar. The semiconductor device further includes a metal layer arranged on the top face of the conductive pillar. The side faces of the semiconductor die and the side faces of the insulating body are coplanar.

An adhesive with self-connecting interconnects is provided. The adhesive layer provides automatic 3D joining of microelectronic components with a conductively self-adjusting anisotropic matrix. In an implementation, the adhesive matrix automatically makes electrical connections between two surfaces that have opposing electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

An adhesive with self-connecting interconnects is provided. The adhesive layer provides automatic 3D joining of microelectronic components with a conductively self-adjusting anisotropic matrix. In an implementation, the adhesive matrix automatically makes electrical connections between two surfaces that have opposing electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

3D joining of microelectronic components and a conductively self-adjusting anisotropic matrix are provided. In an implementation, an adhesive matrix automatically makes electrical connections between two surfaces that have electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

3D joining of microelectronic components and a conductively self-adjusting anisotropic matrix are provided. In an implementation, an adhesive matrix automatically makes electrical connections between two surfaces that have electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

A copper nanorod thermal interface material (TIM) is described. The copper nanorod TIM includes a plurality of copper nanorods having a first end thermally coupled with a first surface, and a second end extending toward a second surface. A plurality of copper nanorod branches are formed on the second end. The copper nanorod branches are metallurgically bonded to a second surface. The first surface may be the back side of a die. The second surface may be a heat spread or a second die. The TIM may include a matrix material surrounding the copper nanorods. In an embodiment, the copper nanorods are formed in clusters.

Provided is a method of fabricating a semiconductor package. The method of fabricating the semiconductor package include preparing a lower element including a lower substrate, a lower electrode, an UBM layer, and a reducing agent layer, providing an upper element including an upper substrate, an upper electrode, and a solder bump layer, providing a pressing member on the upper substrate to press the upper substrate to the lower substrate, and providing a laser beam passing through the pressing member to bond the upper element to the lower element.

An electronic device includes a substrate, an electronic component, a first interposing layer and a second interposing layer. The substrate is non-planar and the substrate includes a first substrate pad and a second substrate pad. The electronic component includes a first component pad and a second component pad corresponding to the first substrate pad and the second substrate pad respectively. When the first component pad contacts the first substrate pad, a height difference exists between the second component pad and the second substrate pad. The first interposing layer connects between the first component pad and the first substrate pad. The second interposing layer connects between the second component pad and the second substrate pad. A thickness difference between the first interposing layer and the second interposing layer is 0.5 to 1 time the height difference.

A method includes forming a passivation layer over a metal pad, wherein the metal pad is further overlying a semiconductor substrate of a wafer. A Post-Passivation Interconnect (PPI) is formed to electrically couple to the metal pad, wherein a portion of the PPI is overlying the passivation layer. A metal bump is formed over and electrically coupled to the PPI. The method further includes applying a molding compound over the metal bump and the PPI, applying a release film over the molding compound, pressing the release film against the molding compound, and curing the molding compound when the release film is pressed against the molding compound. The release film is then removed from the molding compound. The wafer is sawed into dies using a blade, with the blade cutting through the molding compound.