Integrated circuit assemblies, electronic systems, and methods for fabricating the same are disclosed. An integrated circuit assembly is formed by thermally contacting at least two integrated circuit packages to opposite sides of a shared heat dissipation device. In one embodiment, the at least two integrated circuit packages are electrically attached to an electronic card to form an intermediate integrated circuit assembly. In a further embodiment, the integrated circuit assembly includes at least one intermediate integrated circuit assembly electrically attached to an electronic board.

An integrated circuit package may be formed comprising a substrate that includes a mold material layer and a signal routing layer, wherein the mold material layer comprises at least one bridge and at least one foam structure embedded in a mold material. In one embodiment, the substrate may include the mold material of the mold material layer filling at least a portion of cells within the foam structure. In a further embodiment, at least two integrated circuit devices may be attached to the substrate, such that the bridge provides device-to-device interconnection between the at least two integrated circuit devices. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board.

An integrated circuit package may be formed comprising a substrate that includes a mold material layer and a signal routing layer, wherein the mold material layer comprises at least one bridge and at least one foam structure embedded in a mold material. In one embodiment, the substrate may include the mold material of the mold material layer filling at least a portion of cells within the foam structure. In a further embodiment, at least two integrated circuit devices may be attached to the substrate, such that the bridge provides device-to-device interconnection between the at least two integrated circuit devices. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board.

A component includes a plurality of electrical connections on a process side opposed to a back side of the component. Each electrical connection includes an electrically conductive multi-layer connection post protruding from the process side. A printed structure includes a destination substrate and one or more components. The destination substrate has two or more electrical contacts and each connection post is in contact with, extends into, or extends through an electrical contact of the destination substrate to electrically connect the electrical contacts to the connection posts. The connection posts or electrical contacts are deformed. Two or more connection posts can be electrically connected to a common electrical contact.

A cryogenic electronic package includes at least two superconducting and/or conventional metal semiconductor structures. Each of the semiconductor structures includes a substrate and a superconducting trace. Additionally, each of the semiconductor structures includes a passivation layer and one or more under bump metal (UBM) structures. The cryogenic electronic package also includes one or more superconducting and/or conventional metal interconnect structures disposed between selected ones of the at least two superconducting semiconductor structures. The interconnect structures are electrically coupled to respective ones of the UBM structures of the semiconductor structures to form one or more electrical connections between the semiconductor structures. A method of fabricating a cryogenic electronic package is also provided.

A cryogenic electronic package includes at least two superconducting and/or conventional metal semiconductor structures. Each of the semiconductor structures includes a substrate and a superconducting trace. Additionally, each of the semiconductor structures includes a passivation layer and one or more under bump metal (UBM) structures. The cryogenic electronic package also includes one or more superconducting and/or conventional metal interconnect structures disposed between selected ones of the at least two superconducting semiconductor structures. The interconnect structures are electrically coupled to respective ones of the UBM structures of the semiconductor structures to form one or more electrical connections between the semiconductor structures. A method of fabricating a cryogenic electronic package is also provided.

A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

A top package used in a PoP (package-on-package) package includes two memory die stacked with a redistribution layer (RDL) between the die. The first memory die is encapsulated in an encapsulant and coupled to a top surface of the RDL. A second memory die is coupled to a bottom surface of the RDL. The second memory die is coupled to the RDL with either a capillary underfill material or a non-conductive paste. The RDL includes routing between each of the memory die and one or more terminals coupled to the RDL on a periphery of the die.

A top package used in a PoP (package-on-package) package includes two memory die stacked with a redistribution layer (RDL) between the die. The first memory die is encapsulated in an encapsulant and coupled to a top surface of the RDL. A second memory die is coupled to a bottom surface of the RDL. The second memory die is coupled to the RDL with either a capillary underfill material or a non-conductive paste. The RDL includes routing between each of the memory die and one or more terminals coupled to the RDL on a periphery of the die.