A driving chip and a display device are provided herein. The driving chip includes a substrate, a plurality of connection bumps and a plurality of buffer bumps on the substrate. Each of the connection bumps and the buffer bumps is disposed on a first substrate of the substrate. The buffer bump includes a first end face with a height a, and the connection bump has a connection bump end face with a height b, a<b. The height is a distance from a corresponding end face of the connection bump or the buffer bump to the first surface. With the buffer bumps on the driving chip, stress buffering can be achieved, which can further improve the bonding effect of the driving chip.

A driving chip and a display device are provided herein. The driving chip includes a substrate, a plurality of connection bumps and a plurality of buffer bumps on the substrate. Each of the connection bumps and the buffer bumps is disposed on a first substrate of the substrate. The buffer bump includes a first end face with a height a, and the connection bump has a connection bump end face with a height b, a<b. The height is a distance from a corresponding end face of the connection bump or the buffer bump to the first surface. With the buffer bumps on the driving chip, stress buffering can be achieved, which can further improve the bonding effect of the driving chip.

Semiconductor devices having mechanical pillar structures, such as angled pillars, that are rectangular and orientated with respect to a semiconductor die to reduce bending stress and in-plane shear stress at a semiconductor die to which the angled pillars are attached, and associated systems and methods, are disclosed herein. The semiconductor device can include angled pillars connected to the semiconductor die and to a package substrate. The angled pillars can be configured such that they are orientated relative to a direction of local stress to increase section modulus.

Semiconductor devices having mechanical pillar structures, such as angled pillars, that are rectangular and orientated with respect to a semiconductor die to reduce bending stress and in-plane shear stress at a semiconductor die to which the angled pillars are attached, and associated systems and methods, are disclosed herein. The semiconductor device can include angled pillars connected to the semiconductor die and to a package substrate. The angled pillars can be configured such that they are orientated relative to a direction of local stress to increase section modulus.

A superconducting electrical device includes one or more traveling-wave parametric amplifiers (TWPAs) on a chip that is electrically connected to a wiring layer of a substrate. The electrical connection of the chip to the wiring layer of the substrate includes, for each of the one or more TWPAs, a signal bump-bond between the TWPA and the substrate. There is a peripheral ring of ground bumps around the signal bump between the TWPA and the substrate.

A package structure includes a first die, a second die, an encapsulant and at least one electrical contact. The first die has an active surface. The second die is disposed on the first die, and has an active surface and a backside surface opposite to the active surface. The active surface of the second die is closer to the active surface of the first die than the backside surface of the second die is. The encapsulant encapsulates the first die and the second die, and has a top surface far away from the active surface of the first die. The electrical contact is exposed from the top surface of the encapsulant and is configured for connecting at least one conductive wire.

Microelectronic die package structures formed according to some embodiments may include a substrate having one or more solder structures. A first set of solder structures is located in a peripheral region of the substrate and a second set of solder structures is located in a central region of the substrate. A height of individual ones of the second set of solder structures is greater than a height of individual ones of the first set of solder structures. A die having a first side and a second side includes one or more conductive die pads on the first side, where individual ones of the conductive die pads are on individual ones of the first set solder structures and on individual ones of the second set solder structures. A die backside layer is on the second side of the die.

A method of bonding semiconductor components is described. In one aspect a first component, for example a semiconductor die, is bonded to a second component, for example a semiconductor wafer or another die, by direct metal-metal bonds between metal bumps on one component and corresponding bumps or contact pads on the other component. In addition, a number of solder bumps are provided on one of the components, and corresponding contact areas on the other component, and fast solidified solder connections are established between the solder bumps and the corresponding contact areas, without realizing the metal-metal bonds. The latter metal-metal bonds are established in a heating step performed after the soldering step. This enables a fast bonding process applied to multiple dies bonded on different areas of the wafer and/or stacked one on top of the other, followed by a single heating step for realizing metal-metal bonds between the respective dies and the wafer or between multiple stacked dies. The method allows to improve the throughput of the bonding process, as the heating step takes place only once for a plurality of dies and/or wafers.

An integrated circuit chip includes a substrate on which a standard cell is disposed. The integrated circuit chip includes a plurality of power bumps including a plurality of first power bumps and a plurality of second power bumps, the plurality of power bumps. disposed to have a staggered arrangement in a central region of one surface of the integrated circuit chip, and connected to provide power to the standard cell; a first metal wiring disposed below the plurality of first power bumps and electrically connected to the plurality of first power bumps, at least a part of the first metal wiring overlapping the plurality of first power bumps from a plan view; and a second metal wiring horizontally separated from the first metal wiring, disposed below the plurality of second power bumps, and electrically connected to the plurality of second power bumps, at least a part of the second metal wiring overlapping the plurality of second power bumps from the plan view. The plurality of first power bumps are disposed along a first line extending in a first direction parallel to a first diagonal direction of the integrated circuit chip, and along a second line extending in a second direction parallel to a second diagonal direction of the integrated circuit chip different from the first diagonal direction, the first diagonal direction and second diagonal direction being diagonal with respect to edges of the integrated circuit chip, and the plurality of second power bumps are disposed along a third line spaced apart from the first line and extending in the first direction, and along a fourth line spaced apart from the second line and extending in the second direction.

Integrated circuit packages and methods of forming the same are disclosed. A first die is mounted on a first side of a workpiece, the workpiece including a second die. The workpiece is mounted to a front side of a package substrate, where the first die is at least partially disposed in a through hole in the package substrate. A heat dissipation feature may be attached on a second side of the workpiece. An encapsulant may be formed on the front side of the package substrate around the workpiece.