A method of bonding semiconductor components is described. In one aspect a first component, for example a semiconductor die, is bonded to a second component, for example a semiconductor wafer or another die, by direct metal-metal bonds between metal bumps on one component and corresponding bumps or contact pads on the other component. In addition, a number of solder bumps are provided on one of the components, and corresponding contact areas on the other component, and fast solidified solder connections are established between the solder bumps and the corresponding contact areas, without realizing the metal-metal bonds. The latter metal-metal bonds are established in a heating step performed after the soldering step. This enables a fast bonding process applied to multiple dies bonded on different areas of the wafer and/or stacked one on top of the other, followed by a single heating step for realizing metal-metal bonds between the respective dies and the wafer or between multiple stacked dies. The method allows to improve the throughput of the bonding process, as the heating step takes place only once for a plurality of dies and/or wafers.

Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.

Packages for semiconductor devices, packaged semiconductor devices, and methods of packaging semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes an integrated circuit die mounting region, a molding material around the integrated circuit die mounting region, and an interconnect structure over the molding material and the integrated circuit die mounting region. The interconnect structure has contact pads, and connectors are coupled to the contact pads. Two or more of the connectors have an alignment feature formed thereon.

An electronic device with stud bumps is disclosed. In an embodiment an electronic device includes a carrier board having an upper surface and an electronic chip mounted on the upper surface, the electronic chip having a mounting side facing the upper surface of the carrier board, a top side facing away from the upper surface, and sidewalls connecting the mounting side to the top side, wherein the electronic chip has equal to or less than 5 stud bumps per square millimeter of a base area of the mounting side, wherein the carrier board has at least one recess in the upper surface, and wherein at least one of the stud bumps reaches into the recess.

A chip package structure is provided. The chip package structure includes a substrate. The chip package structure includes a chip over the substrate. The chip package structure includes a first bump and a first dummy bump between the chip and the substrate. The first bump is electrically connected between the chip and the substrate, the first dummy bump is electrically insulated from the substrate, the first dummy bump is between the first bump and a corner of the chip, and the first dummy bump is wider than the first bump.

A radar device includes: a substrate including multiple high-frequency conductor layers arranged on a front surface; a semiconductor component in contact with the high-frequency conductor layers via conductive members; and an adhesive that bonds the semiconductor component to the front surface of the substrate. The semiconductor component has a bottom surface and a first side surface facing in a first direction. All the multiple high-frequency conductor layers include at least high-frequency conductor layers bending in a plane of the front surface and thereby extend, on the front surface, from inside ends facing the bottom surface to outside ends positioned in the first direction from the first side surface. The adhesive is in contact with the front surface except for the sites of the multiple high-frequency conductor layers formed and in contact with the side surfaces of the semiconductor component.

Disclosed is a semiconductor package with increased thermal radiation efficiency, which includes: a first die having signal and dummy regions and including first vias in the signal region, a second die on the first die and including second vias in the signal region, first die pads on a top surface of the first die and coupled to the first vias, first connection terminals on the first die pads which couple the second vias to the first vias, second die pads in the dummy region and on the top surface of the first die, and second connection terminals on the second die pads and electrically insulated from the first vias and the second vias. Each of the second die pads has a rectangular planar shape whose major axis is provided along a direction that leads away from the signal region.

A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate and forming a first adhesive element directly on the chip structure. The first adhesive element has a first thermal conductivity. The method also includes forming a second adhesive element directly on the chip structure. The second adhesive element has a second thermal conductivity, and the second thermal conductivity is greater than the first thermal conductivity. The method further includes attaching a protective lid to the chip structure through the first adhesive element and the second adhesive element.

Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.

A surface mounting semiconductor component includes a semiconductor device, a circuit board, a number of first solder bumps, and a number of second solder bumps. The semiconductor device included a number of die pads. The circuit board includes a number of contact pads. The first solder bumps are configured to bond the semiconductor device and the circuit board. Each of the first solder bumps connects at least two die pads with a corresponding contact pad. Each of the second solder bumps connects a die pad with a corresponding contact pad.