A semiconductor package including a first stack; a plurality of TSVs passing through the first stack; a second stack on the first stack and including a second surface facing a first surface of the first stack; a first pad on the first stack and in contact with the TSVs; a second pad on the second stack; a bump connecting the first and second pads; a first redundancy pad on the first surface of the first stack, spaced apart from the first pad, and not in contact with the TSVs; a second redundancy pad on the second surface of the second stack and spaced apart from the second pad; and a redundancy bump connecting the first redundancy pad and the second redundancy pad, wherein the first pad and first redundancy pad are electrically connected to each other, and the second pad and second redundancy pad are electrically connected to each other.

A method includes bonding a second package component to a first package component, bonding a third package component to the first package component, attaching a dummy die to the first package component, encapsulating the second package component, the third package component, and the dummy die in an encapsulant, and performing a planarization process to level a top surface of the second package component with a top surface of the encapsulant. After the planarization process, an upper portion of the encapsulant overlaps the dummy die. The dummy die is sawed-through to separate the dummy die into a first dummy die portion and a second dummy die portion. The upper portion of the encapsulant is also sawed through.

Methods and apparatus to embed host dies in a substrate are disclosed An apparatus includes a first die having a first side and a second side opposite the first side. The first side includes a first contact to be electrically coupled with a second die. The second side includes a second contact. The apparatus further includes a substrate including a metal layer and a dielectric material on the metal layer. The first die is encapsulated within the dielectric material. The second contact of the first die is bonded to the metal layer independent of an adhesive.

A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

A semiconductor chip may include; a device layer including transistors on a substrate, a wiring layer on the device layer, a first through via passing through the device layer and the substrate, and a second through via passing through the wiring layer, the device layer and the substrate, wherein a first height of the first through via is less than a second height of the second through via.

A semiconductor package may include a first semiconductor chip, a second semiconductor chip spaced apart from the first semiconductor chip, an adhesive layer including an interposition portion and a side portion, and a molding layer. The molding layer may surround the first semiconductor chip, the second semiconductor chip, and the adhesive layer. The interposition portion may be between the first and second semiconductor chips. The side portion may contact a side surface of the first semiconductor chip and a side surface of the second semiconductor chip. A top surface of the side portion is curved, and an outer side surface of the side portion is flat.

A method includes forming a metal bump on a top surface of a first package component, forming a solder region on a top surface of the metal bump, forming a protection layer extending on a sidewall of the metal bump, reflowing the solder region to bond the first package component to a second package component, and dispensing an underfill between the first package component and the second package component. The underfill is in contact with the protection layer.

A method includes forming a through-via from a first conductive pad of a first device die. The first conductive pad is at a top surface of the first device die. A second device die is adhered to the top surface of the first device die. The second device die has a surface conductive feature. The second device die and the through-via are encapsulated in an encapsulating material. The encapsulating material is planarized to reveal the through-via and the surface conductive feature. Redistribution lines are formed over and electrically coupled to the through-via and the surface conductive feature.

A method includes bonding a first and a second package component on a top surface of a third package component, and dispensing a polymer. The polymer includes a first portion in a space between the first and the third package components, a second portion in a space between the second and the third package components, and a third portion in a gap between the first and the second package components. A curing step is then performed on the polymer. After the curing step, the third portion of the polymer is sawed to form a trench between the first and the second package components.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least a circuit substrate, a semiconductor die and a filling material. The circuit substrate has a first surface, a second surface opposite to the first surface and a cavity concave from the first surface. The circuit substrate includes a dielectric material and a metal floor plate embedded in the dielectric material and located below the cavity. A location of the metal floor plate corresponds to a location of the cavity. The metal floor plate is electrically floating and isolated by the dielectric material. The semiconductor die is disposed in the cavity and electrically connected with the circuit substrate. The filling material is disposed between the semiconductor die and the circuit substrate. The filling material fills the cavity and encapsulates the semiconductor die to attach the semiconductor die and the circuit substrate.