The present disclosure relates to a semiconductor package and a manufacturing method thereof. The method includes stacking semiconductor chips using a thermo-compression bonding (TCB) method, where defects are minimized for increased reliability. The semiconductor package includes an interface chip including a first test pad, a bump pad provided inside the first test pad, and a first through silicon via (TSV) provided between the first test pad and the bump pad; at least one memory chip, which is stacked on the interface chip and includes a second test pad, a dummy pad provided inside the second test pad, and a second TSV provided between the second test pad and the dummy pad; and an adhesive layer provided between the interface chip and the at least one memory chip. wherein no bump is provided on the first test pad and the second test pad.

Semiconductor chips may include a substrate; a protective layer on a first surface of the substrate, through electrodes extending through the substrate and the protective layer, and a Peltier structure including first through structures including first conductivity type impurities, and second through structures including second conductivity type impurities, which may extend through the substrate and the protective layer; pads on the protective layer and connected to the through electrodes, respectively, first connection wires connecting respective first ends of the first through structures to respective first ends of the second through structures, and second connection wires connecting respective second ends of the first through structures to respective second ends of one of the second through structures. The first through structures and the second through structures may be alternately connected to each other in series by the first connection wires and the second connection wires.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes first and second package components stacked upon and electrically connected to each other. The first package component includes first and second conductive bumps, the second package component includes third and fourth conductive bumps, and dimensions of the first and second conductive bumps are less than those of the third and fourth conductive bumps. The semiconductor package includes a first joint structure partially wrapping the first conductive bump and the third conductive bump, and a second joint structure partially wrapping the second conductive bump and the fourth conductive bump. A curvature of the first joint structure is different from a curvature of the second joint structure.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes first and second package components stacked upon and electrically connected to each other. The first package component includes first and second conductive bumps, the second package component includes third and fourth conductive bumps, and dimensions of the first and second conductive bumps are less than those of the third and fourth conductive bumps. The semiconductor package includes a first joint structure partially wrapping the first conductive bump and the third conductive bump, and a second joint structure partially wrapping the second conductive bump and the fourth conductive bump. A curvature of the first joint structure is different from a curvature of the second joint structure.

A semiconductor device including an integrated circuit, a dielectric layer, a plurality of connecting terminals and at least one dummy conductor is provided. The integrated circuit has a plurality of connecting pads, and the dielectric layer is disposed thereon and partially exposes the plurality of the connecting pads by a plurality of openings defined therein. The plurality of the connecting terminals is disposed on the plurality of the connecting pads exposed by the plurality of the openings. The at least one dummy conductor is disposed on the dielectric layer and electrically isolated from the integrated circuit. A substantial topology variation is between the plurality of the connecting terminals and the at least one dummy conductor. A semiconductor package having the semiconductor device is also provided.

A semiconductor device including an integrated circuit, a dielectric layer, a plurality of connecting terminals and at least one dummy conductor is provided. The integrated circuit has a plurality of connecting pads, and the dielectric layer is disposed thereon and partially exposes the plurality of the connecting pads by a plurality of openings defined therein. The plurality of the connecting terminals is disposed on the plurality of the connecting pads exposed by the plurality of the openings. The at least one dummy conductor is disposed on the dielectric layer and electrically isolated from the integrated circuit. A substantial topology variation is between the plurality of the connecting terminals and the at least one dummy conductor. A semiconductor package having the semiconductor device is also provided.

The present disclosure relates to a semiconductor package and a manufacturing method thereof. The method includes stacking semiconductor chips using a thermo-compression bonding (TCB) method, where defects are minimized for increased reliability. The semiconductor package includes an interface chip including a first test pad, a bump pad provided inside the first test pad, and a first through silicon via (TSV) provided between the first test pad and the bump pad; at least one memory chip, which is stacked on the interface chip and includes a second test pad, a dummy pad provided inside the second test pad, and a second TSV provided between the second test pad and the dummy pad; and an adhesive layer provided between the interface chip and the at least one memory chip. wherein no bump is provided on the first test pad and the second test pad.

A semiconductor package includes a first sub-package and a second sub-package. The first sub-package is stacked atop the second sub-package. Each of the first sub-package and the second sub-package includes at least two first semiconductor dies, a second semiconductor die, a plurality of molding pieces, a bond-pad layer, a plurality of redistribution layers (RDLs) and a plurality of bumps. The bumps of the first sub-package are attached to the bond-pad layer of the second sub-package.

A semiconductor system includes a semiconductor chip comprising a RF circuit, a buffer layer over the RF circuit and a plurality of bumps over the buffer layer, wherein the plurality of bumps comprising at least one functional bump electrically connected to the RF circuit, and at least one dummy bump which is maintained at a distance from the RF circuit and prevented from being electrically connected to the RF circuit by the buffer layer, a conductive layer disposed over the semiconductor chip and coupled to the plurality of bumps through a plurality of vias, a feedline structure disposed over the conductive layer, wherein the feedline structure is electrically coupled to the RF circuit, and a plurality of antennas disposed over the feedline structure, wherein at least one antenna of the plurality of antennas is coupled to the RF circuit through the feedline structure.

Semiconductor chips may include a substrate; a protective layer on a first surface of the substrate, through electrodes extending through the substrate and the protective layer, and a Peltier structure including first through structures including first conductivity type impurities, and second through structures including second conductivity type impurities, which may extend through the substrate and the protective layer; pads on the protective layer and connected to the through electrodes, respectively, first connection wires connecting respective first ends of the first through structures to respective first ends of the second through structures, and second connection wires connecting respective second ends of the first through structures to respective second ends of one of the second through structures. The first through structures and the second through structures may be alternately connected to each other in series by the first connection wires and the second connection wires.