Microelectronic die package structures formed according to some embodiments may include a substrate and a die having a first side and a second side. The first side of the die is coupled to the substrate, and a die backside layer is on the second side of the die. The die backside layer includes a plurality of unfilled grooves in the die backside layer. Each of the unfilled grooves has an opening at a surface of the die backside layer, opposite the second side of the die, and extends at least partially through the die backside layer.

A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

Stacked semiconductor device encompasses an upper semiconductor substrate, an upper insulating film laminated on a principal surface of the upper semiconductor substrate, an upper sealing-pattern orbiting along a periphery of the upper insulating film, a lower chip defining a chip mounting area in at least a part of a principal surface, the principal surface is facing to the upper insulating film, and a lower sealing-pattern disposed on the principal surface of the lower chip, delineating a pattern mating to a topology of the upper sealing-pattern, orbiting around the chip mounting area, configured to implement a metallurgical connector by solid-phase diffusion bonding to the upper sealing-pattern. Hermetical sealed space is established in an inside of the chip mounting area, the upper insulating film and the metallurgical connector.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

Disclosed are devices, fabrication methods and design rules for flip-chip devices. Aspects include an apparatus including a flip-chip device. The flip-chip device including a die having a plurality of under bump metallizations (UBMs). A package substrate having a plurality of bond pads is also included. A plurality of solder joints coupling the die to the package substrate. The plurality of solder joints are formed from a plurality of solder bumps plated on the plurality of UBMs, where the plurality of solder bumps are directly connected to the plurality of bond pads.

An adhesive member includes: a conductive particle layer including a plurality of conductive particles; a non-conductive layer disposed on the conductive particle layer; and a screening layer interposed between the conductive particle layer and the non-conductive layer and includes a plurality of screening members spaced apart from each other.

An approach to provide a method of joining a semiconductor chip to a semiconductor substrate, the approach includes depositing a nanoparticle paste and aligning each of one or more solder contacts on a semiconductor chip to a substrate bond pad. The approach includes sintering, in a reducing gaseous environment, the nanoparticle paste to connect the semiconductor chip to a semiconductor substrate bond pad.

In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a first die disposed over the substrate, a metal wire attached to a frontside of the first die, and a first plurality of die stopper bumps disposed along a backside of the first die and configured to control an angle of operation of the first die. The first plurality of die stopper bumps directly contacts a backside surface of the first die.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

The purpose of the present invention is to provide an electronic circuit connection method and an electronic circuit capable of improving the reliability of electrical connection. A connection method for an electronic circuit 100 includes: a process of forming a first metal bumps 30 and a second metal bump 40, each of which has a cone shape; and a process of joining a first electrode pad 12 and a third electrode pad 22 by the first metal bump 30 and joining a second electrode pad 13 and a fourth electrode pad 23 by the second metal bump 40, wherein at least one region of between a first region 11a and a second region 11b in a first connection surface 11 and between a third region 21a and a fourth region 21b in a second connection surface 21 has a step 11c, and the first metal bump 30 and the second metal bump 40 have different heights so as to correct a height H1 of the step 11c.