In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

A high-frequency module includes a module substrate including major surfaces opposite to each other; a module substrate including major surfaces opposite to each other, the major surface being disposed facing the major surface; a first electronic component including a filter coupled to a power amplifier; a second electronic component including a filter coupled to a low-noise amplifier; and a third electronic component (an integrated circuit) including the low-noise amplifier. The first electronic component is disposed one of between the major surfaces, on the major surface, and on the major surface. The second electronic component is disposed another one of between the major surface surfaces, on the major surface, and on the major surface. The third electronic component is disposed other one of between the major surfaces, on the major surface, and on the major surface.

In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

A package to die connection system and method are provided. The system includes a semiconductor device having a substrate with a top surface. A gasket is affixed to the top surface of the substrate and has at least one cavity with a portion of the cavity open to a sidewall of the gasket. A semiconductor die is attached to the top surface of the substrate. A sidewall of the semiconductor die is abutted with the sidewall of the gasket. A portion of a metal layer is exposed to the open portion of the cavity. A pillar located in the cavity is electrically connected to the exposed portion of the metal layer.

The present disclosure provides a method for preparing a semiconductor package. The method includes providing a first device having a first upper surface and a first side, wherein the first upper surface and the first side form a first corner. The method also includes forming a bump structure over the first upper surface, wherein the bump structure extends laterally across the first side of the first device.

A semiconductor structure and semiconductor device are provided. The semiconductor structure includes a plurality of layers of memory modules stacked on an upper surface of the logic chip in a first direction which is perpendicular to the upper surface of the logic chip. Each storage module includes a plurality of memory chips stacked in a second direction which is parallel to the upper surface. Each memory chip in a top layer includes one second wireless communication part; and each memory chip in a non-top layer includes two second wireless communication parts arranged in the first direction and a wired communication part connected between the two second wireless communication parts. Two adjacent second wireless communication parts located on different memory chips in the first direction communicate with each other wirelessly; and each first wireless communication part communicates wirelessly with a closest second wireless communication part in a bottom memory chip.

An interposer device comprises two bump regions, a channel region, a plurality of signal lines and a plurality of ground lines. The two bump regions are respectively coupled to two semiconductor devices. The channel region is connected between the two bump regions. The plurality of signal lines are embedded in the two bump regions and the channel region, and electrically connected to the two semiconductor devices for transmitting circuit signals. The plurality of ground lines are embedded in the two bump regions and the channel region for shielding the plurality of signal lines. In each bump region, each signal line comprises a trunk portion, a turning portion, and a signal turning point connected between the trunk portion and the turning portion. The trunk portion extends parallel to a first direction, and the turning portion extends parallel to a second direction.

A semiconductor package is provided, including a package forming method and a power supply module. The semiconductor package may include a first chip comprising a first surface, and a second surface opposite the first surface. The semiconductor package may also include a chip interconnect component located on the second surface of the first chip. In addition, the semiconductor package may include a second chip located on the chip interconnect component, comprising a third surface in contact with the chip interconnect component, and a fourth surface opposite the third surface. The chip interconnect component comprises an electrically conductive frame, one side of the electrically conductive frame is electrically connected to the second surface of the first chip, and the other side of the electrically conductive frame is electrically connected to the third surface of the second chip. The chip interconnect component may further comprise an insulating material for filling a gap of the electrically conductive frame between the first chip and the second chip. By arranging at least two chip on both sides of a preformed chip interconnect component, embodiments of the present disclosure achieve a high density chip layout for a 3D structure.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.