A chip packaging structure includes a chip and a film substrate. The chip is formed with a gold bump, and the film substrate is formed with an inner lead, wherein the gold bump includes a first bonding surface and a plurality of side walls. The gold bump is electrically connected to the inner lead through a eutectic material coverage layer, and the first bonding surface and at least one of the plurality of side walls are covered by the eutectic material coverage layer.

A film-type semiconductor package includes a metal lead portion arranged on a film substrate, a semiconductor chip including a pad, and a bump connecting the metal lead portion to the pad of the semiconductor chip. The bump includes a metal pillar arranged on the pad and including a first metal and a soldering portion arranged on an entire surface of the metal pillar, bonded to the metal lead portion, and including the first metal and a second metal that is different from the first metal.

According to an example aspect of the present invention, there is provided a bonding structure for forming at least one electrical connection between an optoelectronic component and a photonic substrate. The bonding structure comprises a pillar structure between the optoelectronic component and the photonic substrate, and a bonding layer comprising bonding material on the pillar structure. The pillar structure for at least one individual electrical connection comprises at least two portions and at least one gap between the portions for receiving extra bonding material of the bonding layer.

A method includes aligning a germanium feature on a first CMOS wafer with an aluminum feature on a second CMOS wafer. The aluminum feature and the germanium feature are pressed together. A eutectic bond is formed connecting the aluminum feature to the germanium feature. The eutectic bond has a melting point which is lower than the melting point of aluminum and the melting point of germanium.

Provided herein is an apparatus including a first CMOS wafer and a second CMOS wafer. A number of eutectic bonds connect the first CMOS wafer to the second CMOS wafer. The eutectic bond includes combinations where the eutectic bonding temperature is lower than the maximum temperature a CMOS circuit can withstand without being damaged during processing.

A method includes providing a first and a second joining partner each having a first main surface, wherein at least a portion of the first main surfaces of the first and joining partners each comprise a metal layer. The method further includes applying a plurality of solder preforms to the metal layer of the first main surface of at least one of the first and second joining partners, positioning the first and second joining partners so that the solder preforms contact the metal layers of the first main surfaces of the first and second joining partners, and melting the plurality of solder preforms under pressure to form a single continuous thin layer area interconnect comprising a diffusion solder bond which bonds together the metal layers of the of the first main surfaces of the first and second joining partners.

A method of manufacturing a semiconductor device includes: arranging a solder material containing at least tin, between a semiconductor element and a joined member provided with a nickel layer and a copper layer, such that the solder material is in contact with the copper layer, the nickel layer being provided on a surface of the joined member, and the copper layer being provided on at least a portion of a surface of the nickel layer; and melting and solidifying the solder material to form Cu.sub.6Sn.sub.5 on the surface of the nickel layer using tin of the solder material and the copper layer.

Embodiments herein may relate to an apparatus with a ball grid array (BGA) package that includes a plurality of solder balls of an off-eutectic material. In embodiments, the respective solder balls of the plurality of solder balls may form solder joints between a substrate of the BGA and a second substrate. In some embodiments the joints may be less than approximately 0.6 micrometers from one another. Other embodiments may be described and/or claimed.

A display module includes: a plurality of light emitting diodes; a substrate having a plurality of indium-tin oxide (ITO) electrodes disposed thereon, the plurality of ITO electrodes being connected to electrodes of the plurality of light emitting diodes; and an assembly configured to connect the electrodes of the plurality of light emitting diodes and the plurality of ITO, wherein the assembly comprises a silver (Ag) paste to be applied on the plurality of ITO electrodes, and the electrodes of the plurality of light emitting diodes and the plurality of ITO electrodes of the substrate may be bonded by eutectic bonding through the assembly during thermal compression bonding.

An electronic device includes an electronic unit and a circuit structure. The circuit structure is electrically connected to the electronic unit and includes a first circuit structure, a second circuit structure, a bonding pad, and an adjustment layer. The first circuit structure includes at least one first circuit layer and at least one first insulation layer. The second circuit structure is disposed between the electronic unit and the first circuit structure, and includes at least one second circuit layer and at least one second insulation layer. The bonding pad and the adjustment layer are disposed between the second circuit structure and the first circuit structure. A coefficient of thermal expansion of the adjustment layer is smaller than that of at least one of the at least one first insulation layer of the first circuit structure and the at least one second insulation layer of the second circuit structure.