A packaged semiconductor device includes a molded interconnect substrate having a signal layer including a first channel and a second channel on a dielectric layer with vias, and a bottom metal layer for providing a ground return path. The signal layer includes contact pads, traces of the first and second channel include narrowed trace regions, and the bottom metal layer includes a patterned layer including ground cut regions. DC blocking capacitors are in series within the traces of the first and second channel for providing AC coupling that have one plate over one of the ground cuts. An integrated circuit (IC) includes a first and a second differential input channel coupled to receive an output from the DC blocking capacitors, with a bump array thereon flip chip mounted to the contact pads to provide first and second differential output signals.

Embodiments relate to an apparatus for rework of a BGA package. Memory shape material is placed adjacent to a plurality of solder joints of the package. Stimulation is applied to the material, with the stimulation causing the material to change from a non-stimulated shape to a stimulated shape. This stimulation causes an expansion of the material. As the material expands, it exerts a tensile force on the BGA package and an adjacently positioned carrier, causing a separation of the two components, while mitigating collateral heat of adjacently positioned components.

A control device and a circuit board are provided. The control device can operate with the circuit board, and includes a ball pad array. The ball pad array includes a plurality of power ball pads and a plurality of ground ball pads, which are arranged in the same pad arrangement region. At least a portion of the power ball pads and at least a portion of the ground ball pads are arranged in an alternate manner. The circuit board includes a solder pad array corresponding to the ball pad array of the control device so as to be disposed with the control device.

A packaged semiconductor device includes a molded interconnect substrate having a signal layer including a first channel and a second channel on a dielectric layer with vias, and a bottom metal layer for providing a ground return path. The signal layer includes contact pads, traces of the first and second channel include narrowed trace regions, and the bottom metal layer includes a patterned layer including ground cut regions. DC blocking capacitors are in series within the traces of the first and second channel for providing AC coupling that have one plate over one of the ground cuts. An integrated circuit (IC) includes a first and a second differential input channel coupled to receive an output from the DC blocking capacitors, with a bump array thereon flip chip mounted to the contact pads to provide first and second differential output signals.

A packaged semiconductor device includes a molded interconnect substrate having a signal layer including a first channel and a second channel on a dielectric layer with vias, and a bottom metal layer for providing a ground return path. The signal layer includes contact pads, traces of the first and second channel include narrowed trace regions, and the bottom metal layer includes a patterned layer including ground cut regions. DC blocking capacitors are in series within the traces of the first and second channel for providing AC coupling that have one plate over one of the ground cuts. An integrated circuit (IC) includes a first and a second differential input channel coupled to receive an output from the DC blocking capacitors, with a bump array thereon flip chip mounted to the contact pads to provide first and second differential output signals.

A packaged semiconductor device includes a molded interconnect substrate having a signal layer including a first channel and a second channel on a dielectric layer with vias, and a bottom metal layer for providing a ground return path. The signal layer includes contact pads, traces of the first and second channel include narrowed trace regions, and the bottom metal layer includes a patterned layer including ground cut regions. DC blocking capacitors are in series within the traces of the first and second channel for providing AC coupling that have one plate over one of the ground cuts. An integrated circuit (IC) includes a first and a second differential input channel coupled to receive an output from the DC blocking capacitors, with a bump array thereon flip chip mounted to the contact pads to provide first and second differential output signals.

An electronic device includes a first wiring substrate and a semiconductor device mounted on the first wiring substrate. A plurality of first semiconductor chips and a second semiconductor chip which controls each of the plurality of first semiconductor chips are mounted side by side on a second wiring substrate of the semiconductor device. Further, the plurality of first semiconductor chips are mounted between a first substrate side of the wiring substrate and an extension line of a first chip side of the second semiconductor chip. Furthermore, the first wiring substrate includes a first power line which supplies a first power potential to each of the plurality of first semiconductor chips and a second power line which supplies a second power potential to the second semiconductor chip and has a width larger than that of the first power line. Also, the second power line intersects the first substrate side of the second wiring substrate and extends from a side of the first substrate side of the second wiring substrate toward the second semiconductor chip when seen in a plan view.

Certain embodiments of the present disclosure provide a method for soldering a chip onto a surface. The method generally includes forming a bonding pad on the surface on which the chip is to be soldered, wherein the bonding pad is surrounded, at least in part, by dielectric material. The method may also include treating the dielectric material to render the dielectric material superomniphobic, and soldering the chip onto the bonding pad.

A semiconductor die is mounted at a die area of a ball grid array package that includes an array of electrically-conductive ball. A power channel conveys a power supply current to the semiconductor die. The power channel is formed by an electrically-conductive connection plane layers extending in a longitudinal direction between a distal end at a periphery of the package and a proximal end at the die area. A distribution of said electrically-conductive balls is made along the longitudinal direction. The electrically-conductive connection plane layer includes subsequent portions in the longitudinal direction between adjacent electrically-conductive balls of the distribution. Respective electrical resistance values of the subsequent portions monotonously decrease from the distal end to the proximal end. A uniform distribution of power supply current over the length of the power channel is thus facilitated.

A method of yield prejudgment and bump re-assignment for a die is provided. The die includes a plurality of areas. Each area is electrically connected to a substrate through a corresponding bump. The successful-connection probability of each area is prejudged. The die is divided into a signal region and a short-circuit region according to the successful-connection probabilities. The positions of the bumps are arranged so that signal bumps are disposed in the signal region and power bumps are disposed in the short region.