A semiconductor structure includes a semiconductor wafer, a first surface mount component, a second surface mount component and a first barrier structure. The first surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of first electrical connectors. The second surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of second electrical connectors, wherein an edge of the second surface mount component is overhanging a periphery of the semiconductor wafer. The first barrier structure is disposed on the semiconductor wafer in between the second electrical connectors and the edge of the second surface mount component, wherein a first surface of the first barrier structure is facing the second electrical connectors, and a second surface of the first barrier structure is facing away from the second electrical connectors.

A semiconductor structure includes a semiconductor wafer, a first surface mount component, a second surface mount component and a first barrier structure. The first surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of first electrical connectors. The second surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of second electrical connectors, wherein an edge of the second surface mount component is overhanging a periphery of the semiconductor wafer. The first barrier structure is disposed on the semiconductor wafer in between the second electrical connectors and the edge of the second surface mount component, wherein a first surface of the first barrier structure is facing the second electrical connectors, and a second surface of the first barrier structure is facing away from the second electrical connectors.

Systems and techniques that facilitate uniform qubit chip gaps via injection-molded solder pillars are provided. In various embodiments, a device can comprise one or more injection-molded solder interconnects. In various aspects, the one or more injection-molded solder interconnects can couple at least one qubit chip to an interposer chip. In various embodiments, the device can further comprise one or more injection-molded solder pillars. In various instances, the one or more injection-molded solder pillars can be between the at least one quit chip and the interposer chip. In various cases, the one or more injection-molded solder pillars can be in parallel with the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can facilitate and/or maintain a uniform gap between the at least one qubit chip and the interposer chip. In various embodiments, a melting point of the one or more injection-molded solder pillars can be higher than a melting point of the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can be superconductors. In various embodiments, a yield strength of the one or more injection-molded solder pillars can be between 3,000 pounds per square inch and 15,000 pounds per square inch, which can be higher than a yield strength of the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can be binary tin alloys, tertiary tin alloys, and/or quaternary tin alloys.

A micro-component comprises a component substrate having a first side and an opposing second side. Fenders project from the first and second sides of the component substrate and include first-side fenders extending from the first side and a second-side fender extending from the second side of the component substrate. At least two of the first-side fenders have a non-conductive surface and are disposed closer to a corner of the component substrate than to a center of the component substrate.

A semiconductor structure includes a semiconductor wafer, a first surface mount component, a second surface mount component and a first barrier structure. The first surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of first electrical connectors. The second surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of second electrical connectors, wherein an edge of the second surface mount component is overhanging a periphery of the semiconductor wafer. The first barrier structure is disposed on the semiconductor wafer in between the second electrical connectors and the edge of the second surface mount component, wherein a first surface of the first barrier structure is facing the second electrical connectors, and a second surface of the first barrier structure is facing away from the second electrical connectors.

Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.

Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.

Devices and methods related to packaging of radio-frequency (RF) devices on ceramic substrates. In some embodiments, a packaged electronic device can include a ceramic substrate configured to receive one or more components. The ceramic substrate can include a conductive layer in electrical contact with a ground plane. The packaged electronic device can further include a die having an integrated circuit and mounted on a surface of the ceramic substrate. The packaged electronic device can further include a conformal conductive coating implemented over the die to provide shielding functionality. The packaged electronic device can further include an electrical connection between the conformal conductive coating and the conductive layer.

A control unit that controls a motor includes a semiconductor device, the semiconductor device includes a semiconductor package including a plurality of first electrodes, a wiring board including a plurality of second electrodes arranged so as to correspond to each of the plurality of first electrodes, and solder joints connecting the plurality of first electrodes and the plurality of second electrodes, and a tip end of a second electrode arranged at an outermost corner of the wiring board is located outside an outer peripheral end of the semiconductor package.

A quantum processor includes: a first chip comprising a qubit array, in which a plurality of qubits within the qubit array define an enclosed region on the first chip, in which each qubit of the plurality of qubits that define the enclosed region is arranged to directly electromagnetically couple to an adjacent qubit of the plurality of qubits that define the enclosed region, and in which each qubit of the qubit array comprises at least two superconductor islands, and a second chip bonded to the first chip, the second chip including one or more qubit control elements, in which the qubit control elements are positioned directly over the enclosed region of the first chip.