A multi-layer semiconductor structure includes a first semiconductor structure and a second semiconductor structure, with at least one of the first and second semiconductor structures provided as a superconducting semiconductor structure. The multi-layer semiconductor structure also includes one or more interconnect structures. Each of the interconnect structures is disposed between the first and second semiconductor structures and coupled to respective ones of interconnect pads provided on the first and second semiconductor structures. Additionally, each of the interconnect structures includes a plurality of interconnect sections. At least one of the interconnect sections includes at least one superconducting and/or a partially superconducting material.

A semiconductor package is provided, which includes a first die and a second die. The first die includes a first section of a power converter, and the second die includes a second section of the power converter. The power converter may include a plurality of switches, and a Power Management (PM) circuitry to control operation of the power converter by controlling switching of the plurality of switches. The PM circuitry may include a first part and a second part. The first section of the power converter in the first die may include the first part of the PM circuitry, and the second section of the power converter in the second die may include the second part of the PM circuitry.

A method includes providing a structure including a carrier wafer, and a first device wafer with an adhesion layer between the carrier wafer and the first device wafer; and forming a plurality of first ablation structures in the structure, each of the plurality of first ablation structures extending through the first device wafer, the adhesion layer and a portion of the carrier wafer. Each of the plurality of first ablation structures has a portion inside the carrier wafer with a depth no greater than one half of a thickness of the carrier wafer. The first device wafer includes a plurality of first dies, each pair of adjacent first dies being separated by one of the plurality of first ablation structures. The plurality of first ablation structures are formed by either laser grooving or mechanical sawing.

Provided is a semiconductor package including an interposer. The semiconductor package includes: a package base substrate; a lower redistribution line structure disposed on the package base substrate and including a plurality of lower redistribution line patterns; at least one interposer including a plurality of first connection pillars spaced apart from each other on the lower redistribution line structure and connected respectively to portions of the plurality of lower redistribution line patterns, and a plurality of connection wiring patterns; an upper redistribution line structure including a plurality of upper redistribution line patterns connected respectively to the plurality of first connection pillars and the plurality of connection wiring patterns, on the plurality of first connection pillars and the at least one interposer; and at least two semiconductor chips adhered on the upper redistribution line structure while being spaced apart from each other.

A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. The memory components can be configured to route data around defective data connections to maintain full capacity and continue to support memory transactions.

Embodiments may relate to a method of forming a microelectronic package with an integrated heat spreader (IHS). The method may include placing a solder thermal interface material (STIM) layer on a face of a die that is coupled with a package substrate; coupling the IHS with the STIM layer and the package substrate such that the STIM is between the IHS and the die; performing formic acid fluxing of the IHS, STIM layer, and die; and dispensing, subsequent to the formic acid fluxing, sealant on the package substrate around a periphery of the IHS.

A 3D integrated circuit device can include a substrate, a thermal interface layer and at least one die, at least one device layer bonded between the thermal interface layer and the at least one die, wherein the thermal interface layer enhances conductive heat transfer between the at least one device layer and the at least one die, and a heat sink located adjacent to a heat spreader, wherein the thermal interface layer, the at least one die and the at least one device layer are located between the heat spreader and the substrate.

Hyperchip structures and methods of fabricating hyperchips are described. In an example, an integrated circuit assembly includes a first integrated circuit chip having a device side opposite a backside. The device side includes a plurality of transistor devices and a plurality of device side contact points. The backside includes a plurality of backside contacts. A second integrated circuit chip includes a device side having a plurality of device contact points thereon. The second integrated circuit chip is on the first integrated circuit chip in a device side to device side configuration. Ones of the plurality of device contact points of the second integrated circuit chip are coupled to ones of the plurality of device contact points of the first integrated circuit chip. The second integrated circuit chip is smaller than the first integrated circuit chip from a plan view perspective.

Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

A method for manufacturing a semiconductor package may include: forming a photoimageable dielectric layer on a substrate including a pad; forming a preliminary via hole in the photoimageable dielectric layer to expose the pad; forming a hard mask layer on the photoimageable dielectric layer and the pad; etching the photoimageable dielectric layer and the hard mask layer to form a via hole, a first hole, and a trench; forming a metal layer on the photoimageable dielectric layer connected to the pad; planarizing the metal layer to form a wiring pattern; and placing a semiconductor chip electrically connected to the wiring pattern. The first hole may be disposed on the via hole and connected thereto, and a diameter of the first hole may be larger than a diameter of the via hole.