Apparatuses and methods for providing thermal pathways from a substrate to a thermal bonding pad. The thermal pathways may be metal extensions of the thermal bonding pad that are disposed in channels formed in a backside passivation layer underneath the thermal bonding pad, and may be in direct contact with an underlying substrate. The thermal pathways may provide improved thermal dissipation from the substrate.

Embodiments disclosed herein include electronics packages with improved thermal pathways. In an embodiment, an electronics package includes a package substrate. In an embodiment, the package substrate comprises a plurality of backside layers, a plurality of front-side layers, and a core layer between the plurality of backside layers and the plurality of front-side layers. In an embodiment, an inductor is embedded in the plurality of backside layers. In an embodiment, a plurality of bumps are formed over the front-side layers and thermally coupled to the inductor. In an embodiment, the plurality of bumps are thermally coupled to the core layer by a plurality of vias.

A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

In an embodiment, a device includes: an integrated circuit die having a first side and a second side opposite the first side; a die stack on the first side of the integrated circuit die; a dummy semiconductor feature on the first side of the integrated circuit die, the dummy semiconductor feature laterally surrounding the die stack, the dummy semiconductor feature electrically isolated from the die stack and the integrated circuit die; a first adhesive disposed between the die stack and the dummy semiconductor feature; and a plurality of conductive connectors on the second side of the integrated circuit die.

In an embodiment, a device includes: an integrated circuit die having a first side and a second side opposite the first side; a die stack on the first side of the integrated circuit die; a dummy semiconductor feature on the first side of the integrated circuit die, the dummy semiconductor feature laterally surrounding the die stack, the dummy semiconductor feature electrically isolated from the die stack and the integrated circuit die; a first adhesive disposed between the die stack and the dummy semiconductor feature; and a plurality of conductive connectors on the second side of the integrated circuit die.

A method and apparatus are provided that includes an integrated circuit die having an in-chip heat sink, along with an electronic device and a chip package having the same, and methods for fabricating the same. In one example, an integrated circuit die has an in-chip heat sink that separates a high heat generating integrated circuit from another integrated circuit disposed within the die. The in-chip heat sink provides a highly conductive heat transfer path from interior portions of the die to at least one exposed die surface.

A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies spaced apart from one another. The first semiconductor die has a major surface with non-overlapping first and second regions. The semiconductor die assembly further includes an array of first pillars extending heightwise from the first region of the major surface of the first semiconductor die toward the second semiconductor die. Similarly, the semiconductor die assembly includes an array of second pillars extending heightwise from the second region of the major surface of the first semiconductor die toward the second semiconductor die. The first and second pillars have different lateral densities and different average widths. The latter difference at least partially offsets an effect of the former difference on relative metal deposition rates of an electrochemical plating process used to form the first and second pillars.

A packaging device including bumps and a method of manufacturing the packaging device are presented. In the method of manufacturing a packaging device, a dielectric layer that covers a packaging base is formed and a lower layer is formed over a packaging base including first and second connecting pads. A plurality of dummy bumps that overlaps with the dielectric layer is formed. A sealing pattern that covers the dummy bumps, filling areas between the dummy bumps, is formed. A lower layer pattern in which the plurality of dummy bumps have been disposed is formed by removing portions of the lower layer that are exposed and do not overlap with the sealing pattern.

The present disclosure relates to a system in package having a chiplet with a first substrate and a first die deposed over the first substrate, a second die, a second substrate that the chiplet and the second die are deposed over, and a heatsink spreader deposed over the chiplet and the second die. Herein, the first substrate includes layered-cake shaped heatsink stanchions that are coupled to the first die, and the second substrate includes layered-cake shaped heatsink stanchions that are coupled to the chiplet and the second die. As such, heat generated by the first die can be dissipated by the heatsink stanchions within the first and second substrates, and heat generated by the second die can be dissipated by the heatsink stanchions within the second substrate. Furthermore, the heat generated by the first die and the second die can be dissipated by the heatsink spreader above them.

A method of manufacturing an electronic package is provided, in which an electronic element is disposed on a carrier structure; a heat dissipation body of a heat dissipation structure is disposed on the electronic element via a heat dissipation material; the heat dissipation material is cured; supporting legs of the heat dissipation structure are fixed on the carrier structure via a bonding layer; and the bonding layer is cured. Therefore, the heat dissipation structure can be effectively fixed to the heat dissipation material and the bonding layer by completing the arrangements of the heat dissipation material and the bonding layer in stages.