A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies spaced apart from one another. The first semiconductor die has a major surface with non-overlapping first and second regions. The semiconductor die assembly further includes an array of first pillars extending heightwise from the first region of the major surface of the first semiconductor die toward the second semiconductor die. Similarly, the semiconductor die assembly includes an array of second pillars extending heightwise from the second region of the major surface of the first semiconductor die toward the second semiconductor die. The first and second pillars have different lateral densities and different average widths. The latter difference at least partially offsets an effect of the former difference on relative metal deposition rates of an electrochemical plating process used to form the first and second pillars.

A semiconductor memory device includes an integrated circuit (IC) chip structure, wherein the IC chip includes a substrate, a memory cell disposed on the substrate, and a local well disposed on the substrate, wherein a conductivity type of the local well is different from a conductivity type of the substrate, a wiring stack structure disposed on the IC chip structure, wherein the wiring stack structure includes a signal transfer pattern connected to the memory cell through a signal interconnector, and a thermal dispersion pattern connected to the local well through a thermal interconnector, and a heat transfer structure connected to the thermal dispersion pattern for transferring heat to the thermal dispersion pattern from a heat source.

A semiconductor device includes a semiconductor substrate having a principal surface which has a first side in a first direction and a second side in a second direction. A plurality of transistor arrays is formed in a region adjacent to the first side of the semiconductor substrate. A plurality of bumps include first and second bumps which are longer in the first direction. The distance between the first side and the first bump is shorter than the distance between the first side and the second bump. The plurality of transistor arrays include a first and a second transistor arrays. The first transistor array has a plurality of first unit transistors arranged along the first direction such that the first unit transistors overlap the first bump. The second transistor array has a plurality of second unit transistors arranged along the first direction such that the second unit transistors overlap the second bump.

Semiconductor devices with underfill control features, and associated systems and methods. A representative system includes a substrate having a substrate surface and a cavity in the substrate surface, and a semiconductor device having a device surface facing toward the substrate surface. The semiconductor device further includes at least one circuit element electrically coupled to a conductive structure. The conductive structure is electrically connected to the substrate, and the semiconductor device further has a non-conductive material positioned adjacent the conductive structure and aligned with the cavity of the substrate. An underfill material is positioned between the substrate and the semiconductor device. In other embodiments, in addition to or in lieu of the con-conductive material, a first conductive structure is connected within the cavity, and a second conductive structure connected outside the cavity. The first conductive structure extends away from the device surface a greater distance than does the second conductive structure.

A beamforming integrated circuit system for use in a phased array has a microchip with RF circuitry, and a plurality of (on chip) interfaces electrically connected with the RF circuitry. The plurality of interfaces includes a signal interface, a first ground interface, and a second ground interface. The signal interface is configured to communicate an RF signal, and both the first and second ground interfaces are adjacent to the signal interface. The system also has a material ring circumscribing the plurality of interfaces, and at least one RF ground path coupled with the material ring.

A beamforming integrated circuit system for use in a phased array has a microchip with RF circuitry, a bottom surface, and a plurality of interfaces electrically connected with the RF circuitry. The plurality of interfaces includes a plurality of static interfaces and a plurality of RF interfaces. The plurality of static interfaces are on the bottom surface of the microchip and adjacent to each other. The plurality of RF interfaces are also on the bottom surface of the microchip, but radially outward of the plurality of static interfaces. The microchip is configured to be flip chip mounted.

A device with thermal control is presented. In some embodiments, the device includes a plurality of die positioned in a stack, each die including a chip, interconnects through a thickness of the chip, metal features of electrically conductive composition connected to the interconnects on a bottom side of the chip, and adhesive or underfill layer on the bottom side of the chip. At least one thermally conducting layer, which can be a pyrolytic graphite layer, a layer formed of carbon nanotubes, or a graphene layer, is coupled between a top side of one of the plurality of die and a bottom side of an adjoining die in the stack. A heat sink can be coupled to the thermally conducting layer.

Highly reliable chip mounting is accomplished by using a substrate having such a shape that a stress exerted on a flip-chip-connected chip can be reduced, so that the stress exerted on the chip is reduced and separation of an interlayer insulating layer having a low dielectric constant (low-k) is minimized. Specifically, in a chip mounting structure, a chip including an interlayer insulating layer having a low dielectric constant (low-k) is flip-chip connected to a substrate via bumps is shown. In the chip mounting structure, the substrate has such a shape that a mechanical stress exerted on the interlayer insulating layer at corner portions of the chip due to a thermal stress is reduced, the thermal stress occurring due to a difference in coefficient of thermal expansion between the chip and the substrate.

A semiconductor device includes a semiconductor substrate having a principal surface which has a first side in a first direction and a second side in a second direction. A plurality of transistor arrays is formed in a region adjacent to the first side of the semiconductor substrate. A plurality of bumps include first and second bumps which are longer in the first direction. The distance between the first side and the first bump is shorter than the distance between the first side and the second bump. The plurality of transistor arrays include a first and a second transistor arrays. The first transistor array has a plurality of first unit transistors arranged along the first direction such that the first unit transistors overlap the first bump. The second transistor array has a plurality of second unit transistors arranged along the first direction such that the second unit transistors overlap the second bump.

A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies spaced apart from one another. The first semiconductor die has a major surface with non-overlapping first and second regions. The semiconductor die assembly further includes an array of first pillars extending heightwise from the first region of the major surface of the first semiconductor die toward the second semiconductor die. Similarly, the semiconductor die assembly includes an array of second pillars extending heightwise from the second region of the major surface of the first semiconductor die toward the second semiconductor die. The first and second pillars have different lateral densities and different average widths. The latter difference at least partially offsets an effect of the former difference on relative metal deposition rates of an electrochemical plating process used to form the first and second pillars.