Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A plurality of solder thermal interface material (STIM) thermal interconnects may be coupled with the die and an integrated heat spreader (IHS) may be coupled with the plurality of STIM thermal interconnects. A thermal underfill material may be positioned between the IHS and the die such that the thermal underfill material at least partially surrounds the plurality of STIM thermal interconnects. Other embodiments may be described or claimed.

A semiconductor device includes a semiconductor chip having a first surface and a second surface, the first surface facing a substrate, and the second surface being opposite to the first surface and being a circuit surface; a first bump connecting the first surface of the semiconductor chip and the substrate; and a metallic pillar connecting the first surface of the semiconductor chip and the substrate.

A package on packaging structure provides for improved thermal conduction and mechanical strength by the introduction of a sold thermal coupler between the first and second packages. The first package has a first substrate and through vias through the first substrate. A first set of conductive elements is aligned with and coupled to the through vias of the first substrate. A solid thermal coupler is coupled to the first set of conductive elements and to a die of the second package. A second set of conductive elements is coupled to the die and a bottom substrate is coupled to the second set of conductive elements. The thermal coupler may be, e.g., an interposer, a heat spreader, or a thermal conductive layer.

In accordance with certain embodiments, heat-dissipating elements are integrated with semiconductor dies and substrates in order to facilitate heat dissipation therefrom during operation.

Apparatuses and methods for providing thermal pathways from a substrate to a thermal bonding pad. The thermal pathways may be metal extensions of the thermal bonding pad that are disposed in channels formed in a backside passivation layer underneath the thermal bonding pad, and may be in direct contact with an underlying substrate. The thermal pathways may provide improved thermal dissipation from the substrate.

Provided is a printed circuit board including a first conductive layer including a first conductive layer including a recessed portion, a protruding portion disposed at a higher level than that of the recessed portion, and a connecting portion connecting the recessed portion with the protruding portion. A second conductive layer is disposed above the recessed portion of the first conductive layer. A core layer is disposed between the first conductive layer and the second conductive layer. An upper solder resist layer is disposed on the second conductive layer. The upper solder resist layer exposes at least a portion of the protruding portion. A lower solder resist layer is disposed below the first conductive layer.

A semiconductor structure includes a three dimensional stack including a first semiconductor die and a second semiconductor die. The second semiconductor die is connected with the first semiconductor die with a bump between the first semiconductor die and the second semiconductor die. The semiconductor structure includes a molding compound between the first semiconductor die and the second semiconductor die. A first portion of a metal structure over a surface of the three dimensional stack and contacting a backside of the second semiconductor die and a second portion of the metal structure over the surface of the three dimensional stack and configured for electrically connecting the three dimensional stack with an external electronic device.

Highly reliable chip mounting is accomplished by using a substrate having such a shape that a stress exerted on a flip-chip-connected chip can be reduced, so that the stress exerted on the chip is reduced and separation of an interlayer insulating layer having a low dielectric constant (low-k) is minimized. Specifically, in a chip mounting structure, a chip including an interlayer insulating layer having a low dielectric constant (low-k) is flip-chip connected to a substrate via bumps is shown. In the chip mounting structure, the substrate has such a shape that a mechanical stress exerted on the interlayer insulating layer at corner portions of the chip due to a thermal stress is reduced, the thermal stress occurring due to a difference in coefficient of thermal expansion between the chip and the substrate.

A semiconductor package includes a substrate having a vent hole defined therein. Semiconductor chips are mounted on an upper surface of the substrate. Chip connection terminals are disposed between the substrate and the semiconductor chips. Substrate connection terminals are disposed on a lower surface of the substrate. A plated layer includes a vertical heat-dissipation layer on an inner wall of the vent hole, a first heat-dissipation layer on the upper surface of the substrate and connected to at least one of the chip connection terminals and a second heat-dissipation layer on the lower surface of the substrate and connected to at least one of the substrate connection terminals. An encapsulant covers the upper surface of the substrate, the chip connection terminals, and the semiconductor chips, and fills a space between the semiconductor chips and the substrate. The encapsulant is on the plated layer and fills the vent hole.

A semiconductor device includes a semiconductor element layer including a semiconductor substrate including a bump area and a dummy bump area. A TSV structure is in the bump area and vertically extends through the semiconductor substrate, a first topmost line is in the bump area and on the TSV structure and electrically connected to the TSV structure, a signal bump is in the bump area and has a first width in a first direction and is electrically connected to the TSV structure via the first topmost line, a second topmost line is in the dummy bump area and has the same vertical level as a vertical level of the first topmost line and extends in the first direction, and a dummy bump is in the dummy bump area and contacts the second topmost line and has a second width in the first direction larger than the first width.