A semiconductor device package includes a plurality of semiconductor chips and an interposer structure. The interposer structure has a plurality of tiers for accommodating the plurality of semiconductor chips. The interposer structure includes at least one conductive via connecting to a pad of the plurality of semiconductor chips.

Semiconductor devices including materials for thermal management, and associated systems and methods, are described herein. In some embodiments, a semiconductor package includes a first semiconductor die coupled to a second semiconductor die by a plurality of interconnect structures. A thermal material can be positioned between the first and second semiconductor dies. The thermal material can include an array of heat transfer elements embedded in a supporting matrix material. The array of heat transfer elements can include at least one vacant region aligned with at least one of the interconnect structures.

A chip on film package is disclosed, including a flexible film and a chip. The flexible film includes a film base, a patterned metal layer includes a plurality of pads and disposed on an upper surface of the film base, and a dummy metal layer covering a lower surface of the film base and capable of dissipating heat of the chip. The dummy metal layer comprises at least one opening exposing the second surface, and at least one of the plurality of pads is located within the at least one opening in a bottom view of the chip on film package. The chip is mounted on the plurality of pads of the patterned metal layer.

Embodiments of the disclosure relate to an MIO substrate with integrated jet cooling for electronic modules and a method of forming the same. In one embodiment, a substrate for an electronic module includes a thermal compensation base layer having an MIO structure and a cap layer overgrown on the MIO structure. A plurality of orifices extends through the thermal compensation base layer between an inlet face and an outlet face positioned opposite to the inlet face, defining a plurality of jet paths. A plurality of integrated posts extends outward from the cap layer, wherein each integrated post of the plurality of integrated posts is positioned on the outlet face between each orifice of the plurality of orifices.

An RF circuit module includes a module substrate, a first substrate in which a first circuit is implemented, and a second substrate in which a second circuit is implemented. The first circuit includes a control circuit that controls an operation of the second circuit. The second circuit includes a radio-frequency amplifier circuit that amplifies an RF signal. The second substrate is mounted on the first substrate. The first substrate is disposed on the module substrate such that a circuit forming surface faces the module substrate. The first substrate and the second substrate have a circuit-to-circuit connection wire that electrically connects the first circuit and the second circuit without intervening the module substrate.

A semiconductor die assembly in accordance with an embodiment of the present technology includes first and second semiconductor dies spaced apart from one another. The first semiconductor die has a major surface with non-overlapping first and second regions. The semiconductor die assembly further includes an array of first pillars extending heightwise from the first region of the major surface of the first semiconductor die toward the second semiconductor die. Similarly, the semiconductor die assembly includes an array of second pillars extending heightwise from the second region of the major surface of the first semiconductor die toward the second semiconductor die. The first and second pillars have different lateral densities and different average widths. The latter difference at least partially offsets an effect of the former difference on relative metal deposition rates of an electrochemical plating process used to form the first and second pillars.

A chip on film package is disclosed, including a flexible film, a patterned circuit layer, a chip, and a dummy metal layer. The flexible film includes a first surface and a second surface opposite to the first surface. The patterned circuit layer is disposed on the first surface. The chip is mounted on the first surface and electrically connected to the patterned circuit layer. The dummy metal layer covers the second surface capable of dissipating heat of the chip. The dummy metal layer is electrically insulated from the patterned circuit layer.

A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

Semiconductor device assemblies having stacked semiconductor dies and electrically functional heat transfer structures (HTSs) are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a mounting surface with a base region and a peripheral region adjacent the base region. At least one second semiconductor die can be electrically coupled to the first semiconductor die at the base region. The device assembly can also include an HTS electrically coupled to the first semiconductor die at the peripheral region.

A semiconductor device includes a semiconductor substrate divided into a pad region and a cell region and having an active surface and an inactive surface opposite to the active surface, a plurality of metal lines on the active surface of the semiconductor substrate, passivation layers on the active surface of the semiconductor substrate, and a plurality of bumps in the cell region. The passivation layers include a first passivation layer covering the plurality of metal lines and having a non-planarized top surface along an arrangement profile of the plurality of metal lines, and a second passivation layer on the non-planarized top surface of the first passivation layer and having a planarized top surface on which the plurality of bumps are disposed.