A light-emitting element including: a first semiconductor layer doped with a first type of dopant; a second semiconductor layer doped with a second type of dopant that is different from the first type of dopant; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction, which may be a direction in which the first semiconductor layer, the active layer, and the second semiconductor layer may be arranged, may be shorter than the width measured in a second direction that is perpendicular to the first direction.

A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.

Disclosed are a system-on-chip integrated packaging structure, a manufacturing method therefor and a three-dimensional stacked device. The system-on-chip integrated packaging structure includes: a substrate, a chip, a first electrical connection structure and a second electrical connection structure. A front surface of the substrate is provided with a recess and a via welding pad, and a back surface of the substrate is provided with a conductive via extending to the via welding pad. The chip is embedded in the recess, and a chip welding pad is disposed on a surface of the chip away from a bottom surface of the recess. Different chips may be electrically connected by means of the first electrical connection structure and the second electrical connection structure, which is conducive to form a three-dimensional stacked structure with high-density interconnection, miniaturized packaging and thinning.

Disclosed is a semiconductor package comprising a semiconductor chip, a redistribution pattern on a bottom surface of the semiconductor chip and coupled to the semiconductor chip, a protection layer that covers a bottom surface of the redistribution pattern, a conductive pattern on a bottom surface of the protection layer and coupled to the redistribution pattern, a buffer pattern in contact with a bottom surface of a first part of the conductive pattern and with the bottom surface of the protection layer, and an under bump pattern on a bottom surface of the second part of the conductive pattern and covering a bottom surface and a side surface of the buffer pattern. The under bump pattern is coupled to the second part of the conductive pattern.

A method includes forming an insulating layer over a package. The package has a plurality of locations where openings are subsequently formed. A first laser shot is performed, location by location, on each of the locations across the package. A first laser spot of the first laser shot overlaps with each of the locations. The first laser shot removes a first portion of the insulating layer below the first laser spot. Another laser shot is performed, location by location, on each of the locations across the package. Another laser spot of the another laser shot overlaps with each of the locations. The another laser shot removes another portion of the insulating layer below the another laser spot. Performing the another laser shot, location by location, on each of the locations across the package is repeated multiple times, until desired portions of the insulating layer are removed.

A chip package structure includes at least one chip, at least one thermally conductive element, a molding compound, and a redistribution layer. The respective chip has an active surface and a back surface opposite to each other and a plurality of electrodes disposed on the active surface. The thermally conductive element is disposed on the back surface of the respective chip. The molding compound encapsulates the chip and the thermally conductive element and has an upper surface and a lower surface opposite to each other. A bottom surface of each of the electrodes of the respective chip is aligned with the lower surface of the molding compound. The molding compound exposes a top surface of the respective thermally conductive element. The redistribution layer is disposed on the lower surface of the molding compound and electrically connected to the electrodes of the respective chip.

A semiconductor packaging structure includes a die including a bond pad and a first metal layer structure disposed on the die, the first metal layer structure having a first width, the first metal layer structure including a first metal layer, the first metal layer electrically coupled to the bond pad. The semiconductor packaging structure also includes a first photosensitive material around sides of the first metal layer structure and a second metal layer structure disposed over the first metal layer structure and over a portion of the first photosensitive material, the second metal layer structure electrically coupled to the first metal layer structure, the second metal layer structure having a second width, where the second width is greater than the first width. Additionally, the semiconductor packaging structure includes a second photosensitive material around sides of the second metal layer structure.

This application discloses a package structure and a package system. The package structure may be used for packaging various types of chips, and is coupled to a PCB, so as to form the package system. The package structure includes a package base layer, a chip, a package body, and a connecting assembly. The package base layer has a first surface and a second surface that are opposite to each other. The chip is coupled to the first surface, and there is a chip pad on a surface that is of the chip and that is away from the package base layer. The package body covers the package base layer and the chip to protect the structure, and the chip pad is wired to a surface of the package body through the connecting assembly.

The present invention relates to an electronic module. In particular, to an electronic module which includes one or more components embedded in an installation base. The electronic module can be a module like a circuit board, which includes several components, which are connected to each other electrically, through conducting structures manufactured in the module. The components can be passive components, microcircuits, semiconductor components, or other similar components. Components that are typically connected to a circuit board form one group of components. Another important group of components are components that are typically packaged for connection to a circuit board. The electronic modules to which the invention relates can, of course, also include other types of components.

The present disclosure relates to an embedded packaging module comprising a first semiconductor device, a first packaging layer and a first wiring layer, the first semiconductor device having a first and a second face, at least two positioning bulges and at least one bonding pad being provided on the first face of the first semiconductor device; the first packaging layer being formed on both the first face and a surface adjacent to the first face, the positioning bulges being positioned in the first packaging layer, at least one first via hole being provided in the first packaging layer, the bottom of the first via hole being positioned in the bonding pad and contacting with the bonding pad; the first wiring layer being positioned on the side of the first packaging layer away from the first semiconductor device and being electrically connected with the bonding pad through the first via hole.