Stacked die modules for semiconductor device assemblies and methods of manufacturing the modules are disclosed. In some embodiments, the module includes a shingled stack of semiconductor dies, each die having an uncovered porch with bond pads. Further, a dielectric structure partially encapsulates the shingled stack of semiconductor dies. The dielectric structure includes openings corresponding to the bond pads. The module also includes conductive structures disposed on the dielectric structure, where each of the conductive structures extends over at least one porch of the semiconductor dies to connect to at least one bond pad through a corresponding opening. The semiconductor device assembly may include a controller die attached to a package substrate, the controller die carrying one or more stacked die modules, and bonding wires connecting terminals of the modules to package bond pads.

A pixel includes an emission area and a non-emission area; first to fourth alignment electrodes spaced apart from each other in the emission area and an area of the non-emission area; an insulating layer disposed on the first to fourth alignment electrodes; first to fourth bridge patterns disposed on the insulating layer in the non-emission area; a bank disposed on the first to fourth bridge patterns in the non-emission area, and including a first opening and a second opening; first and second pixel electrodes disposed in the emission area; and light emitting elements disposed in the emission area, and electrically connected with the first and second pixel electrodes. The first alignment electrode, the first bridge pattern, and the first pixel electrode are electrically connected to each other. The third alignment electrode, the third bridge pattern, and the second pixel electrode are electrically connected to each other.

An IC chip includes I/O bumps on a back side, a first die, a second die, a first circuit, and a second circuit. The first die has driver circuits for LED devices, the LED devices being located on a front-facing surface of the first die. The first circuit extends from the front side toward the back side and across a thickness of the first die. The first circuit provides electrical connections between the LED devices and at least some of the I/O bumps. The first die and the second die can be stacked vertically or arranged laterally adjacent. The second circuit extends between the first die and the second die to electrically connect the first die and the second die. A circuit board can be electrically connected to the IC chip through the I/O bumps to, among other things, provide power to the various components of the IC chip.

A display device according to an embodiment includes a pixel and a bank. The pixel includes sub-pixels and an emission area including sub-emission areas corresponding to the sub-pixels. The bank surrounds the emission area. The pixel includes electrodes disposed in each of the sub-emission areas, at least one light emitting element disposed in each of the sub-emission areas, and bank patterns disposed under the electrodes, the bank patterns overlapping a portion of the electrodes. The bank patterns include a first bank pattern including a first valley, the first bank pattern being disposed in a first edge area of the emission area in a first direction. The bank patterns include a second bank pattern including a second valley, the second bank pattern being disposed in a second edge area of the emission area in the first direction.

A package comprising a first integrated device comprising a plurality of first pillar interconnects; an encapsulation layer at least partially encapsulating the first integrated device; a metallization portion located over the first integrated device and the encapsulation layer, wherein the metallization portion includes at least one passivation layer and a plurality of metallization layer interconnects, wherein the plurality of first pillar interconnects is coupled to the plurality of metallization layer interconnects; and a second integrated device comprising a plurality of second pillar interconnects, wherein the second integrated device is coupled to the plurality of metallization layer interconnects through a plurality of second pillar interconnects and a plurality of solder interconnects.

A display device and a method of fabricating a display device are provided. A display device includes: a first electrode and a second electrode on a substrate and spaced apart from each other; a third electrode on the substrate; and a first light emitting element between the first electrode and the second electrode. The first electrode, the second electrode, and the third electrode may be arranged on a same layer. The third electrode may be electrically separated from the first electrode and the second electrode.

The present invention relates to the field of photonic integrated circuits and provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes an EIC chip and a PIC chip arranged on a substrate, the EIC chip is located between the PIC chip and the substrate. In embodiments, at least one EIC chip is disposed on a surface of a single PIC chip facing the substrate, and the EIC chip is mounted on the substrate through a connection structure. Therefore, the wiring of the PIC chip in the semiconductor device of the present invention is optimized such that the voltage drop due to long wiring distance can be suppressed, and the package structure of the semiconductor device is also optimized.

A method of manufacturing a three-dimensional system-on-chip, comprising providing a memory wafer structure with a first redistribution layer; disposing a first conductive structure and a core die structure and an input/output die structure with a second conductive structure on the first redistribution layer, the input/output die structure being disposed around the core die structure; forming a dielectric layer covering the core die structure, the input/output die structure, and the first conductive structure; removing a part of the dielectric layer and thinning the core die structure and a plurality of input/output die structures to expose the first and second conductive structures; forming a third redistribution layer on the dielectric layer, the third redistribution layer being electrically connected to the first and second conductive structures; forming a plurality of solder balls on the third redistribution layer; performing die saw. A three-dimensional system-on-chip is further provided.

In a composite component, a semiconductor device is stacked on an elastic wave device. Side electrodes extend from at least one side surface of a piezoelectric substrate of the elastic wave device to at least a side surface of a semiconductor substrate of the semiconductor device and are connected to an IDT electrode and functional electrodes. The side electrodes extend onto at least one of a second main surface of the piezoelectric substrate and a second main surface of the semiconductor substrate.

A display device includes a first electrode and a second electrode, a first insulating layer covering the first electrode and the second electrode, light emitting elements disposed on the first insulating layer, a first connection electrode disposed on the first electrode and contacting an end of each of the light emitting elements, a second connection electrode spaced apart from the first connection electrode and disposed on the second electrode and contacting another end of each of the light emitting elements, a second insulating layer disposed on the first insulating layer and at least partially covering the first connection electrode and the second connection electrode, and a third insulating layer disposed on part of the second insulating layer, wherein the second insulating layer comprises an opening overlapping a part between the first connection electrode and the second connection electrode spaced apart from each other.