A support structure for use in fan-out wafer level packaging is provided that includes, a silicon handler wafer having a first surface and a second surface opposite the first surface, a release layer is located above the first surface of the silicon handler wafer, and a layer selected from the group consisting of an adhesive layer and a redistribution layer is located on a surface of the release layer. After building-up a fan-out wafer level package on the support structure, infrared radiation is employed to remove (via laser ablation) the release layer, and thus remove the silicon handler wafer from the fan-out wafer level package.

A semiconductor structure includes an insulating encapsulant, a semiconductor element, a redistribution layer and an insulating layer. The semiconductor element is embedded in the insulating encapsulant. The redistribution layer is disposed over the insulating encapsulant and electrically connected to the semiconductor element. The insulating layer is disposed in between the insulating encapsulant and the redistribution layer, wherein an uneven interface exists between the insulating layer and the insulating encapsulant, and a planar interface exists between the insulating layer and the redistribution layer.

The invention provides a semiconductor package, which may include a connection structure including one or more redistribution layers. A semiconductor chip is disposed on the connection structure and has an active surface on which a connection pad electrically connected to the redistribution layer is disposed and an inactive surface opposite to the active surface. An encapsulant is disposed on the connection structure and covers at least a portion of the inactive surface of the semiconductor chip. A conductor pattern layer is embedded in the encapsulant such that one exposed surface of the conductor pattern layer is exposed from the encapsulant. A metal layer is disposed on the encapsulant and covers the one exposed surface of the conductor pattern layer.

An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer.

A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (DO and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer.

A passivation layer and conductive via are provided, wherein the transmittance of an imaging energy is increased within the material of the passivation layer. The increase in transmittance allows for a greater cross-linking that helps to increase control over the contours of openings formed within the passivation layer. Once the openings are formed, the conductive vias can be formed within the openings.

A package structure is provided. The package structure includes a semiconductor die and a molding compound layer surrounding the semiconductor die. The package structure also includes a conductive bump over the molding compound layer and a first polymer-containing layer surrounding and in contact with the conductive bump. The package structure further includes a second polymer-containing layer disposed over the first polymer-containing layer. A bottom surface of the conductive bump is below a bottom surface of the second polymer-containing layer.

A semiconductor package including a core substrate, a semiconductor chip in the core substrate and having chip pads, a redistribution wiring layer covering a lower surface of the core substrate and including redistribution wirings electrically connected to the chip pads and a pair of capacitor pads exposed from an outer surface of the redistribution wiring layer, conductive pastes on the capacitor pads, respectively, and a capacitor via the conductive pastes and having first and second outer electrodes on the capacitor pads, respectively, may be provided. Each of the capacitor pads includes a pad pattern exposed from the outer surface of the redistribution wiring layer, and at least one via pattern at a lower portion of the pad pattern and electrically connected to at least one of the redistribution wirings. The via pattern is eccentric by a distance from a center line of the pad pattern.

A package structure and the manufacturing method thereof are provided. The package structure includes a semiconductor die, conductive through vias, an insulating encapsulant, and a redistribution structure. The conductive through vias are electrically coupled to the semiconductor die. The insulating encapsulant laterally encapsulates the semiconductor die and the conductive through vias, wherein the insulating encapsulant has a recess ring surrounding the semiconductor die, the conductive through vias are located under the recess ring, and a vertical projection of each of the conductive through vias overlaps with a vertical projection of the recess ring. The redistribution structure is electrically connected to the semiconductor die and the conductive through vias.