Patent classifications
H01L2224/25177
Method for manufacturing semiconductor package with connection structures including via groups
A method includes placing a package component over a carrier, encapsulating the package component in an encapsulant, and forming a connection structure over and electrically coupling to the package component. The formation of the connection structure includes forming a first via group over and electrically coupling to the package component, forming a first conductive trace over and contacting the first via group, forming a second via group overlying and contacting the first conductive trace, wherein each of the first via group and the second via group comprises a plurality of vias, forming a second conductive trace over and contacting the second via group, forming a top via overlying and contacting the second conductive trace, and forming an Under-Bump-Metallurgy (UBM) over and contacting the top via.
Semiconductor Packages and Method Forming Same
A method includes placing a package component over a carrier, encapsulating the package component in an encapsulant, and forming a connection structure over and electrically coupling to the package component. The formation of the connection structure includes forming a first via group over and electrically coupling to the package component, forming a first conductive trace over and contacting the first via group, forming a second via group overlying and contacting the first conductive trace, wherein each of the first via group and the second via group comprises a plurality of vias, forming a second conductive trace over and contacting the second via group, forming a top via overlying and contacting the second conductive trace, and forming an Under-Bump-Metallurgy (UBM) over and contacting the top via.
Packaged chip and signal transmission method based on packaged chip
A packaged chip, including a package structure, a redistribution structure, and a carrier, where the package structure includes a first chip and a second chip adjacent to the first chip. The redistribution structure is configured to electrically connect the first chip and the carrier, and is configured to electrically connect the second chip and the carrier. The redistribution structure includes a main body made of an insulating material and a bump solder array welded to a lower surface of the main body. A metal redistribution wire group and a metal interconnection wire group that has a curve or bend design are disposed in the main body. An upper surface of the main body of the redistribution structure adheres to a lower surface of the first chip and a lower surface of the second chip. The redistribution structure is welded to an upper surface of the carrier.
Multi-resolution compound micro-devices
A compound micro-assembled device comprises a device substrate. A first component having a first native resolution and a second component having a second native resolution different from the first native resolution are both disposed on the device substrate. The device substrate can comprise a device circuit having a native resolution different from or less than the first and second native resolutions. One or more device interconnections electrically connect the first component to the second component or to the device circuit. In certain embodiments, the first component or the second component can be micro-transfer printed onto the device substrate. In certain embodiments, the compound micro-assembled device can be micro-transfer printed onto a destination substrate or the compound micro-assembled device can comprise a destination substrate onto which the device substrate is micro-transfer printed. At least one of the first component and second components and, optionally, the device substrate, comprises at least a portion of a tether.
Remapped packaged extracted die with 3D printed bond connections
An integrated circuit is provided. The integrated circuit includes a package base including package leads, an extracted die removed from a previous packaged integrated circuit, and an an interposer bonded to the extracted die and the package base. The extracted die includes original bond pads and one or more original ball bonds on the original bond pads. The interposer includes first bond pads electrically connected to the original bond pads with 3D printed first bond connections conforming to the shapes and surfaces of the extracted die and the interposer and second bond pads electrically connected to the package leads with 3D printed second bond connections conforming to shapes and surfaces of the interposer and package base.
Packaged Chip and Signal Transmission Method Based on Packaged Chip
A packaged chip, including a package structure, a redistribution structure, and a carrier, where the package structure includes a first chip and a second chip adjacent to the first chip. The redistribution structure is configured to electrically connect the first chip and the carrier, and is configured to electrically connect the second chip and the carrier. The redistribution structure includes a main body made of an insulating material and a bump solder array welded to a lower surface of the main body. A metal redistribution wire group and a metal interconnection wire group that has a curve or bend design are disposed in the main body. An upper surface of the main body of the redistribution structure adheres to a lower surface of the first chip and a lower surface of the second chip. The redistribution structure is welded to an upper surface of the carrier.
Remapped Packaged Extracted Die with 3D Printed Bond Connections
An integrated circuit is provided. The integrated circuit includes a package base including package leads, an extracted die removed from a previous packaged integrated circuit, and an an interposer bonded to the extracted die and the package base. The extracted die includes original bond pads and one or more original ball bonds on the original bond pads. The interposer includes first bond pads electrically connected to the original bond pads with 3D printed first bond connections conforming to the shapes and surfaces of the extracted die and the interposer and second bond pads electrically connected to the package leads with 3D printed second bond connections conforming to shapes and surfaces of the interposer and package base.
Display device and method for manufacturing same
A display device includes a first electrode and a second electrode disposed on a substrate and spaced apart from each other, a light emitting element on the substrate and having a first end and a second end, a third electrode disposed on the light emitting element, and electrically connecting the first electrode with the first end of the light emitting element, an insulating pattern disposed on the third electrode and exposing the second end of the light emitting element, and a fourth electrode on the substrate, and electrically connecting the second electrode with the second end of the light emitting element. A void may be formed between the light emitting element and the insulating pattern.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
A display device includes a first electrode and a second electrode disposed on a substrate and spaced apart from each other, a light emitting element on the substrate and having a first end and a second end, a third electrode disposed on the light emitting element, and electrically connecting the first electrode with the first end of the light emitting element, an insulating pattern disposed on the third electrode and exposing the second end of the light emitting element, and a fourth electrode on the substrate, and electrically connecting the second electrode with the second end of the light emitting element. A void may be formed between the light emitting element and the insulating pattern.
METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE WITH CONNECTION STRUCTURES INCLUDING VIA GROUPS
A method includes placing a package component over a carrier, encapsulating the package component in an encapsulant, and forming a connection structure over and electrically coupling to the package component. The formation of the connection structure includes forming a first via group over and electrically coupling to the package component, forming a first conductive trace over and contacting the first via group, forming a second via group overlying and contacting the first conductive trace, wherein each of the first via group and the second via group comprises a plurality of vias, forming a second conductive trace over and contacting the second via group, forming a top via overlying and contacting the second conductive trace, and forming an Under-Bump-Metallurgy (UBM) over and contacting the top via.