An integrated spring mounted chip termination for converting energy of a circuit into heat to be absorbed by a heatsink. The integrated spring mounted chip termination includes an input tab configured to connect to the circuit. The integrated spring mounted chip termination also includes a chip termination having a top surface. The chip termination includes an input contact located on the top surface and configured to connect to the input tab, a resistor element located on the top surface and connected to the input contact, and a ground contact located on the top surface and connected to the resistor element. The integrated spring mounted chip termination also includes a formed ground spring connected to the ground contact of the chip termination, the formed ground spring configured to attach the chip termination to the heatsink, such that the chip termination and the heatsink are in contact.

A method of manufacturing a semiconductor device that includes an insulated circuit board having a conductive pattern, a first semiconductor chip with a rectangular shape connected through a first joining material to the conductive pattern, a second semiconductor chip with a rectangular shape disposed on the conductive pattern separated from the first semiconductor chip and connected through a second joining material to the conductive pattern, a terminal disposed above the semiconductor chips, respectively connected to the first and second semiconductor chips through third and fourth joining materials, the terminal having a through-hole above a place between the first and second semiconductor chips, the method including a positioning step in which the first and second semiconductor chips are respectively positioned at at least three positioning places, and at least one of the positioning places is positioned with a positioning member inserted into the through-hole.

A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface facing one side in a thickness direction, and a first electrode arranged on the element main surface; a first insulating layer that is arranged over a peripheral edge portion of the first electrode and the element main surface and includes a first annular portion formed in an annular shape when viewed in the thickness direction; and a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and includes a second annular portion overlapping with the first annular portion when viewed in the thickness direction.

A semiconductor device includes: a seal portion; a first electronic element; a second lead terminal having one end that is disposed to be close to the one end of the first lead terminal within the seal portion, and another end that is exposed from another end of the seal portion, the other end of the seal portion being along the longitudinal direction; a first connecting element disposed within the seal portion, and having one end that is electrically connected to the first electrode disposed on the first electronic element, and another end that is electrically connected to the one end of the second lead terminal; and a conductive bonding agent.

In an electronic device including an electronic component, a sealing resin body, a first member having at least a portion located in the sealing resin body, and a second member connected to the first member via a solder in the sealing resin body, the first member includes a base material formed of a metal material and a coated film at least on a surface of the base material which is adjacent to a back surface of the first member opposite to a facing surface of the first member facing the second member. The coated film includes a metal thin film on a surface of the base material and an uneven oxide film on the metal thin film and made of an oxide of a same metal as a main component of the metal thin film.

A semiconductor die is arranged at a die mounting location of an electrically conductive substrate. The electrically conductive substrate includes an array of electrically conductive leads having openings at the periphery of the electrically conductive substrate. An electrically conductive clip is arranged in a bridge-like position between the semiconductor die and an electrically conductive lead in the array of electrically conductive leads to provide electrical coupling therebetween. The electrically conductive clip has an end coupled to the electrically conductive lead, wherein the end includes: a planar proximal portion configured to contact the electrically conductive lead proximally of the openings, and a distal portion projecting beyond the proximal portion distally thereof, the distal portion provided with sculpturing configured to engage the openings to facilitate immobilizing the electrically conductive clip in the bridge-like position between the semiconductor chip and electrically conductive lead.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

A semiconductor package and a method of manufacturing a semiconductor package. The semiconductor package includes a leadframe having a die attach portion and a lead portion; a semiconductor die mounted on the die attach portion, the semiconductor die having a contact terminal arranged thereon; a clip portion having: a first tab portion receivably mounted in a hole in the lead portion, and a second tab portion arranged on either side of the first tab portion. The second tab portions are fixedly mounted to connect the clip portion to the lead portion.

A semiconductor device includes a semiconductor element having a front electrode, an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and made of aluminum or aluminum alloy, and a metal member having a joint surface joined to the front electrode of the semiconductor element with solder, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, made of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate.

In one embodiment, methods for making semiconductor devices are disclosed.