Implementations of semiconductor packages may include a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the lead frame.

Implementations of semiconductor packages may include a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the lead frame.

According to one embodiment, a semiconductor device includes a semiconductor chip, first and second conductive members, a first connection member, and a resin portion. The first conductive member includes first and second portions. The second portion is electrically connected to the semiconductor chip. A direction from the semiconductor chip toward the second portion is aligned with a first direction. A direction from the second portion toward the first portion is aligned with a second direction crossing the first direction. The second conductive member includes a third portion. The first connection member is provided between the first and third portion. The first connection member is conductive. The resin portion includes a first partial region. The first partial region is provided around the first and third portions, and the first connection member. The first portion has a first surface opposing the first connection member and including a recess and a protrusion.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

The semiconductor device includes a metal plate, a semiconductor element held on the metal plate, a wiring board connected to a surface electrode of the semiconductor element in a facing manner and a conductor fixed to the wiring board wired to the semiconductor element. The conductor has a plate-like shape. One end of the conductor is arranged to be connectable to an outside. One surface side of another end of the conductor is fixed to a surface of the wiring hoard. The conductor includes at least one protruding step on the one surface of the other end. A top portion of the protruding step includes a contact surface parallel to the surface of the wiring board. The other end of the conductor is fixed to the wiring board by the contact surface and the surface of the wiring board coming into close contact with each other.

A semiconductor module includes: a plurality of semiconductor devices that each include a signal terminal extending in a first direction, and that is electrically connected to a semiconductor element; a heat sink; a plurality of first wiring boards that are electrically connected to the plurality of signal terminals of the respective semiconductor devices; and a second wiring board electrically connected to the plurality of first wiring boards. The signal terminal of one of the plurality of semiconductor devices is press-fitted into one of the plurality of first wiring boards in the first direction. The semiconductor module further includes a plurality of communication wirings electrically connecting the plurality of first wiring boards and the second wiring board. The plurality of communication wirings are displaceable in a direction perpendicular to the first direction.

A semiconductor device includes a conductive substrate including an obverse surface facing a first side in thickness direction and a reverse surface opposite from the obverse surface, a first switching semiconductor element bonded to the obverse surface, a first conductive member for passing main circuit current switched by the semiconductor element, and a sealing resin covering the semiconductor element, the conductive member and a part of the substrate. The substrate includes first and second conductive portions mutually spaced in first direction orthogonal to thickness direction. The semiconductor element is electrically bonded to the first conductive portion. The conductive member includes a first part overlapping with the first and the second conductive portions as viewed in thickness direction and being spaced from the obverse surface toward the first side in thickness direction. The first part includes a first opening.

A half bridge circuit includes an input connection configured to supply an electric input, an output connection configured to supply an electric output to a load to be connected to the output connection, a switch and a diode arranged between the input connection and the output connection and a voltage limiting inductance arranged in series between the switch and the diode. The voltage limiting inductance is configured to limit, upon switching the switch, a maximum voltage across the switch to below a breakdown voltage of the switch. A corresponding method of operating the half bridge circuit and package are also described.

In an electronic device including an electronic component, a sealing resin body, a first member having at least a portion located in the sealing resin body, and a second member connected to the first member via a solder in the sealing resin body, the first member includes a base material formed of a metal material and a coated film at least on a surface of the base material which is adjacent to a back surface of the first member opposite to a facing surface of the first member facing the second member. The coated film includes a metal thin film on a surface of the base material and an uneven oxide film on the metal thin film and made of an oxide of a same metal as a main component of the metal thin film.

A thermal management solution may be provided for a microelectronic system including a flexible integrated heat spreader, wherein the flexible integrated heat spreader may comprise a plurality of thermally conductive structures having a flexible thermally conductive film attached to and extending between each of the plurality of thermally conductive structures. The flexible integrated heat spreader may be incorporated into multi-chip package by providing a microelectronic substrate having a plurality of microelectronic devices attached thereto and by thermally contacting each of the plurality of thermally conductive structures of the flexible integrated heat spreader to its respective microelectronic device on the microelectronic substrate.