A connection terminal unit that can be appropriately connected to terminal connection portions of a semiconductor module including a semiconductor element and that can reduce a projection area when seen in a direction orthogonal to a direction along a chip surface is realized. Connection terminal unit includes plurality of connection terminals facing and connected to plurality of terminal connection portions of semiconductor module, and terminal mold portion holding connection terminals. Terminal mold portion has abutment portion that abuts against semiconductor module or base material holding semiconductor module. Abutment portion has vertical abutment portion that abuts against semiconductor module or base material from vertical direction that is a direction in which connection terminals face terminal connection portions, and side abutment portion that abuts against semiconductor module or base material from at least two directions that are different from each other and intersect with vertical direction.

A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

A molded semiconductor module include: a semiconductor die attached to a main surface of a metal block. The die has a metal contact pad at a side of the die facing away from the metal block. A metal terminal has a contact region attached to the metal contact pad of the die, and a distal end region that joins the contact region and is bent upward in a direction away from the metal block such that the distal end region has a free end which terminates at a further distance from the metal block than the contact region. A molding compound encapsulates the die and covers the contact region of the metal terminal. The distal end region of the metal terminal protrudes through a surface of the molding compound that faces a same direction as the side of the die with the metal contact pad.

A method of die and clip attachment includes providing a clip, a die and a substrate, laminating a sinterable silver film on the clip and the die, depositing a tack agent on the substrate, placing the die on the substrate, placing the clip on the die and the substrate to create a substrate, die and clip package, and sintering the substrate, die and clip package.

A method of die and clip attachment includes providing a clip, a die and a substrate, laminating a sinterable silver film on the clip and the die, depositing a tack agent on the substrate, placing the die on the substrate, placing the clip on the die and the substrate to create a substrate, die and clip package, and sintering the substrate, die and clip package.

A semiconductor device includes: a first chip including first and second electrodes provided at a first surface, and a third electrode provided at a second surface positioned at a side opposite to the first surface; a second chip including fourth and fifth electrodes provided at a third surface, and a sixth electrode provided at a fourth surface positioned at a side opposite to the third surface, wherein the second chip is disposed to cause the third surface to face the first surface; a first connector disposed between the first electrode and the fourth electrode and connected to the first and fourth electrodes; and a second connector disposed between the second electrode and the fifth electrode and connected to the second and fifth electrodes.

A semiconductor module includes: a board; a semiconductor device disposed on the board, a first surface of the semiconductor device closer to the board being connected to the board; an interconnection layer to which a second surface of the semiconductor device opposite to the first surface is connected, and which has a recess portion on an opposite surface to a surface closer to the semiconductor device; a first metal film disposed in the recess portion of the interconnection layer via a bonding film, and that is electrically connected to the interconnection layer; an insulating layer disposed on the first metal film; and a heat transfer plate disposed on the insulating layer.

A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.

A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.