A packaged electronic device includes a multilayer substrate, including a first side, a first layer having a first plurality of conductive structures along the first side, and a second layer having a second plurality of conductive structures, a semiconductor die soldered to a first set of the conductive structures, a conductive clip directly connected to one of the conductive structures of the first layer and to a second side of the semiconductor die, and a package structure that encloses the semiconductor die and a portion of the conductive clip.

A semiconductor device includes a lead frame including a die paddle and a lead, a semiconductor chip, and a clip. The semiconductor chip has a first side and a second side opposite to the first side. The first side is attached to the die paddle and the second side includes a first bond pad and a second bond pad. The clip electrically couples the first bond pad to the lead. The clip contacts the first bond pad at a first edge portion of the first bond pad adjacent to the second bond pad and defines a first cavity between a central portion of the first bond pad and the clip. Solder is within the first cavity to electrically couple the clip to the first bond pad. The semiconductor device includes a first opening to the first cavity to route flux away from the second bond pad during reflow soldering.

In a general aspect, a method can include forming a first conductive metal layer including a common gate conductor, and coupling a plurality of semiconductor die to the common gate conductor of the first conductive metal layer where the plurality of semiconductor die include a first silicon carbide die and a second silicon carbide die. The method can include encapsulating at least a portion of the first conductive metal layer and the semiconductor die within an insulator where the first conductive metal layer includes a first conductive path between the common gate conductor and a die gate conductor of the first silicon carbide die, and a second conductive path between the common gate conductor and a die gate conductor of the second silicon carbide die. The first conductive path can have a length substantially equal to a length of the second conductive path.

In a general aspect, an apparatus can include a package including a common gate conductor, a first silicon carbide die having a die gate conductor, and a second silicon carbide die having a die gate conductor. The apparatus can include a first conductive path between the common gate conductor and the die gate conductor of the first silicon carbide die and a second conductive path between the common gate conductor and the die gate conductor of the second silicon carbide die where the first conductive path has a length substantially equal to a length of the second conductive path.

In a general aspect, an apparatus can include a package including a common gate conductor, a first silicon carbide die having a die gate conductor, and a second silicon carbide die having a die gate conductor. The apparatus can include a first conductive path between the common gate conductor and the die gate conductor of the first silicon carbide die and a second conductive path between the common gate conductor and the die gate conductor of the second silicon carbide die where the first conductive path has a length substantially equal to a length of the second conductive path.

A electrical connection element includes a planar mating surface adapted for mating with a metal bonding surface, a rim that forms an enclosed shape around the planar mating surface, and a plurality of outgassing grooves formed in the planar mating surface, wherein each of the outgassing grooves comprises a proximal end that is spaced apart from the rim and a distal end that intersects the rim, and wherein a cross-sectional area of each of the outgassing grooves increases along a lengthwise direction going from the proximal end to the distal end.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

A semiconductor device includes a lead frame including a die paddle and a lead, a semiconductor chip, and a clip. The semiconductor chip has a first side and a second side opposite to the first side. The first side is attached to the die paddle and the second side includes a first bond pad and a second bond pad. The clip electrically couples the first bond pad to the lead. The clip contacts the first bond pad at a first edge portion of the first bond pad adjacent to the second bond pad and defines a first cavity between a central portion of the first bond pad and the clip. Solder is within the first cavity to electrically couple the clip to the first bond pad. The semiconductor device includes a first opening to the first cavity to route flux away from the second bond pad during reflow soldering.

A semiconductor device includes a lead frame including a die paddle and a lead, a semiconductor chip, and a clip. The semiconductor chip has a first side and a second side opposite to the first side. The first side is attached to the die paddle and the second side includes a first bond pad and a second bond pad. The clip electrically couples the first bond pad to the lead. The clip contacts the first bond pad at a first edge portion of the first bond pad adjacent to the second bond pad and defines a first cavity between a central portion of the first bond pad and the clip. Solder is within the first cavity to electrically couple the clip to the first bond pad. The semiconductor device includes a first opening to the first cavity to route flux away from the second bond pad during reflow soldering.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.