A power semiconductor device is such that a notch provided, along a longitudinal end face of an inner lead, in a region of a lead frame to which the inner lead is bonded. A resistor is disposed, adjacent to the inner lead, on the same side as the notch with respect to the inner lead, and a distance between the inner lead and the notch is set to be smaller than a distance between the inner lead and the resistor, and thereby the inner lead, even when shifted in position, comes into no contact with the resistor. Because of this, it is no more necessary that a space be provided around the inner lead taking into consideration a positional shift of the inner lead, and it is possible to secure the heat release area of power semiconductor chips accordingly, and thus to obtain the small-sized and high-powered power semiconductor device.

A method of manufacturing a semiconductor power package includes: providing a pre-molded chip housing and an electrically conducting chip carrier cast-in-place in the pre-molded chip housing; bonding a power semiconductor chip on the electrically conducting chip carrier; and applying a covering material so as to embed the power semiconductor chip. The covering material has an elastic modulus less than an elastic modulus of a material of the pre-molded chip housing and/or a thermal conductivity greater than a thermal conductivity of the material of the pre-molded chip housing and/or a temperature stability greater than a temperature stability of the pre-molded chip housing.

A semiconductor device includes a semiconductor chip having a source electrode on the front surface thereof, a diode that has an anode electrode on the front surface thereof, and a first conductive member through which output signals from the source electrode pass. The semiconductor device further includes a first wiring member that electrically connects the source electrode and the first conductive member, and a second wiring member that electrically connects the anode electrode and the first conductive member and that has a wider surface area than the first wiring member. The semiconductor device includes a second conductive member where the semiconductor chip and the diode are arranged.

A method of manufacturing a semiconductor power package includes: providing a pre-molded chip housing and an electrically conducting chip carrier cast-in-place in the pre-molded chip housing; bonding a power semiconductor chip on the electrically conducting chip carrier; and applying a covering material so as to embed the power semiconductor chip. The covering material has an elastic modulus less than an elastic modulus of a material of the pre-molded chip housing and/or a thermal conductivity greater than a thermal conductivity of the material of the pre-molded chip housing and/or a temperature stability greater than a temperature stability of the pre-molded chip housing.

A semiconductor device includes a semiconductor chip having a source electrode on the front surface thereof, a diode that has an anode electrode on the front surface thereof, and a first conductive member through which output signals from the source electrode pass. The semiconductor device further includes a first wiring member that electrically connects the source electrode and the first conductive member, and a second wiring member that electrically connects the anode electrode and the first conductive member and that has a wider surface area than the first wiring member. The semiconductor device includes a second conductive member where the semiconductor chip and the diode are arranged.