Power module includes: first transistors Q1, Q4 forming at least one half bridge, and disposed at upper and lower arms thereof; second transistors QM1, QM4 of which drains are respectively connected to gates G1 and G4 sides of the first transistors, and sources are respectively connected to the sources S1, S4 sides thereof; source signal wiring patterns SSP1, SSP4 respectively connected to the sources S1, S4 of the first transistors; first connected conductors MSW1, MSW4 for respectively connecting between the source signal wiring patterns and the sources of the second transistors; second gate signal wiring patterns MGP1, MGP4 respectively connected to gates MG1, MG4 of the second transistors; and second connected conductors MGW1, MGW4 for respectively connecting between the gate signal wiring patterns and the gates of the second transistors. Lengths of the first connection conductors are respectively equal to or shorter than lengths of the second connection conductors.

Power module includes: first transistors Q1, Q4 forming at least one half bridge, and disposed at upper and lower arms thereof; second transistors QM1, QM4 of which drains are respectively connected to gates G1 and G4 sides of the first transistors, and sources are respectively connected to the sources S1, S4 sides thereof; source signal wiring patterns SSP1, SSP4 respectively connected to the sources S1, S4 of the first transistors; first connected conductors MSW1, MSW4 for respectively connecting between the source signal wiring patterns and the sources of the second transistors; second gate signal wiring patterns MGP1, MGP4 respectively connected to gates MG1, MG4 of the second transistors; and second connected conductors MGW1, MGW4 for respectively connecting between the gate signal wiring patterns and the gates of the second transistors. Lengths of the first connection conductors are respectively equal to or shorter than lengths of the second connection conductors.

A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that is mounted on an insulating substrate, the other end of the conductive member in the longitudinal direction being joined to a component different from the electrode. The conductive member is made up of a metal sheet, and has a bent portion at the one end and at the other end. The bent portion provided at the one end has a cut in a leading end portion, in the longitudinal direction, and an end joining section at which the cut is not present is joined to the electrode of the semiconductor element. As a result, a semiconductor module can be realized that allows combination of increased current capacity with improved reliability.

A semiconductor device includes an insulating support member, a first and a second conductive layer, a first semiconductor element, a first lead, a first detection conductor and a first gate conductor. The first and second conductive layers are disposed on a front surface of the insulating support member. The first semiconductor includes a first and a second electrode on the same side, and a third electrode disposed on the other side and electrically connected to the first conductive layer. The first lead is connected to the first and second conductive layer. The first detection conductor is connected to the first electrode. The first gate conductor is connected to the second electrode. At least one of the first detection conductor and the first gate conductor has an end connected to the first semiconductor element. The end has a coefficient of linear expansion smaller than that of the first conductive layer.

In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure and a second device receiving structure and a contact extension that is common to the first and second device receiving structures. The first device receiving structure includes a device receiving area and the second device receiving structure includes a drain contact area. A III-N based semiconductor chip has a drain bond pad bonded to the drain contact area and a source bond pad bonded to the contact extension and a gate bond pad bonded to an interconnect. A portion of the silicon based semiconductor chip is bonded to the support device receiving area. In accordance with another embodiment, a method for manufacturing the semiconductor component includes coupling a III-N based semiconductor chip to a portion of the support a silicon based semiconductor chip to another portion of the support.

In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure and a second device receiving structure and a contact extension that is common to the first and second device receiving structures. The first device receiving structure includes a device receiving area and the second device receiving structure includes a drain contact area. A III-N based semiconductor chip has a drain bond pad bonded to the drain contact area and a source bond pad bonded to the contact extension and a gate bond pad bonded to an interconnect. A portion of the silicon based semiconductor chip is bonded to the support device receiving area. In accordance with another embodiment, a method for manufacturing the semiconductor component includes coupling a III-N based semiconductor chip to a portion of the support a silicon based semiconductor chip to another portion of the support.

A connecting strip of conductive elastic material having an arched shape having a concave side and a convex side. The connecting strip is fixed at the ends to a support carrying a die with the convex side facing the support. During bonding, the connecting strip undergoes elastic deformation and presses against the die, thus electrically connecting the at least one die to the support.

A semiconductor device includes an insulating support member, a first and a second conductive layer, a first semiconductor element, a first lead, a first detection conductor and a first gate conductor. The first and second conductive layers are disposed on a front surface of the insulating support member. The first semiconductor includes a first and a second electrode on the same side, and a third electrode disposed on the other side and electrically connected to the first conductive layer. The first lead is connected to the first and second conductive layer. The first detection conductor is connected to the first electrode. The first gate conductor is connected to the second electrode. At least one of the first detection conductor and the first gate conductor has an end connected to the first semiconductor element. The end has a coefficient of linear expansion smaller than that of the first conductive layer.

A connecting strip of conductive elastic material having an arched shape having a concave side and a convex side. The connecting strip is fixed at the ends to a support carrying a die with the convex side facing the support. During bonding, the connecting strip undergoes elastic deformation and presses against the die, thus electrically connecting the at least one die to the support.

A semiconductor device includes an insulating support member, a first and a second conductive layer, a first semiconductor element, a first lead, a first detection conductor and a first gate conductor. The first and second conductive layers are disposed on a front surface of the insulating support member. The first semiconductor includes a first and a second electrode on the same side, and a third electrode disposed on the other side and electrically connected to the first conductive layer. The first lead is connected to the first and second conductive layer. The first detection conductor is connected to the first electrode. The first gate conductor is connected to the second electrode. At least one of the first detection conductor and the first gate conductor has an end connected to the first semiconductor element. The end has a coefficient of linear expansion smaller than that of the first conductive layer.