A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young's modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.

A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young's modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.

Technologies for radiofrequency optimized interconnects for a quantum processor are disclosed. In the illustrative embodiment, signals are carried in coplanar waveguides on a surface of a quantum processor die. A ground ring surrounds the signals and is connected to the ground conductors of each coplanar waveguide. Wire bonds connect the ground ring to a ground of a circuit board. The wire bonds provide both an electrical connection from the quantum processor die to the circuit board as well as increased thermal coupling between the quantum processor die and the circuit board, increasing cooling of the quantum processor die.

Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.