An electrical connection wire connects an electrical connection pad of an electrical chip and an electrical connection pad of a carrier substrate to which the electronic chip is mounted. A dielectric layer surrounds at least the bonding wire. The dielectric layer may be a dielectric sheath or a hardened liquid dielectric material. A dielectric material may also cover at least a portion of the electrical chip and carrier substrate. A liquid electrically conductive material is deposited and hardened to form a local conductive shield surrounding the dielectric layer at the bonding wire.

An electrical connection wire connects an electrical connection pad of an electrical chip and an electrical connection pad of a carrier substrate to which the electronic chip is mounted. A dielectric layer surrounds at least the bonding wire. The dielectric layer may be a dielectric sheath or a hardened liquid dielectric material. A dielectric material may also cover at least a portion of the electrical chip and carrier substrate. A liquid electrically conductive material is deposited and hardened to form a local conductive shield surrounding the dielectric layer at the bonding wire.

An electrical connection wire connects an electrical connection pad of an electrical chip and an electrical connection pad of a carrier substrate to which the electronic chip is mounted. A dielectric layer surrounds at least the bonding wire. The dielectric layer may be a dielectric sheath or a hardened liquid dielectric material. A dielectric material may also cover at least a portion of the electrical chip and carrier substrate. A liquid electrically conductive material is deposited and hardened to form a local conductive shield surrounding the dielectric layer at the bonding wire.

An electrical connection wire connects an electrical connection pad of an electrical chip and an electrical connection pad of a carrier substrate to which the electronic chip is mounted. A dielectric layer surrounds at least the bonding wire. The dielectric layer may be a dielectric sheath or a hardened liquid dielectric material. A dielectric material may also cover at least a portion of the electrical chip and carrier substrate. A liquid electrically conductive material is deposited and hardened to form a local conductive shield surrounding the dielectric layer at the bonding wire.

A display substrate, a method of manufacturing the same, a display panel, and a display apparatus are provided. In one embodiment, a display substrate includes: a base substrate; a plurality of lead wires and a barrier on the base substrate, the plurality of lead wires being separated from one another to form a concave between every two adjacent ones of the plurality of lead wires; and a cover layer covering over the plurality of lead wires and the barrier; wherein the plurality of lead wires are insulated from the barrier, the plurality of lead wires are insulated from the cover layer, the plurality of lead wires are between the base substrate and the cover layer, the barrier is between the plurality of lead wires and the cover layer, and the barrier is formed at least at the concave between at least two of the plurality of lead wires to block the concave.

A display substrate, a method of manufacturing the same, a display panel, and a display apparatus are provided. In one embodiment, a display substrate includes: a base substrate; a plurality of lead wires and a barrier on the base substrate, the plurality of lead wires being separated from one another to form a concave between every two adjacent ones of the plurality of lead wires; and a cover layer covering over the plurality of lead wires and the barrier; wherein the plurality of lead wires are insulated from the barrier, the plurality of lead wires are insulated from the cover layer, the plurality of lead wires are between the base substrate and the cover layer, the barrier is between the plurality of lead wires and the cover layer, and the barrier is formed at least at the concave between at least two of the plurality of lead wires to block the concave.

A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.

A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.

In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.