A method for making a microelectronic unit includes forming a plurality of wire bonds on a first surface in the form of a conductive bonding surface of a structure comprising a patternable metallic element. The wire bonds are formed having bases joined to the first surface and end surfaces remote from the first surface. The wire bonds have edge surfaces extending between the bases and the end surfaces. The method also includes forming a dielectric encapsulation layer over a portion of the first surface of the conductive layer and over portions of the wire bonds such that unencapsulated portions of the wire bonds are defined by end surfaces or portions of the edge surfaces that are uncovered by the encapsulation layer. The metallic element is patterned to form first conductive elements beneath the wire bonds and insulated from one another by portions of the encapsulation layer.

A method for making a microelectronic unit includes forming a plurality of wire bonds on a first surface in the form of a conductive bonding surface of a structure comprising a patternable metallic element. The wire bonds are formed having bases joined to the first surface and end surfaces remote from the first surface. The wire bonds have edge surfaces extending between the bases and the end surfaces. The method also includes forming a dielectric encapsulation layer over a portion of the first surface of the conductive layer and over portions of the wire bonds such that unencapsulated portions of the wire bonds are defined by end surfaces or portions of the edge surfaces that are uncovered by the encapsulation layer. The metallic element is patterned to form first conductive elements beneath the wire bonds and insulated from one another by portions of the encapsulation layer.

A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.

A wire bonding tool for bonding a micro-coaxial wire to a bonding surface includes an electrical-energy application mechanism configured to apply electrical-energy to remove a portion of an electrically conductive shield layer of the micro-coaxial wire to expose a portion of an insulating layer of the micro-coaxial wire, a thermal-energy application mechanism configured to apply thermal-energy to the micro-coaxial wire to remove the exposed portion of the insulating layer of the micro-coaxial wire to expose a portion of a core wire of the micro-coaxial wire, and a bonding head configured to bond the exposed portion of the core wire of the micro-coaxial wire to the bonding surface.

A wire bonding tool for bonding a micro-coaxial wire to a bonding surface includes an electrical-energy application mechanism configured to apply electrical-energy to remove a portion of an electrically conductive shield layer of the micro-coaxial wire to expose a portion of an insulating layer of the micro-coaxial wire, a thermal-energy application mechanism configured to apply thermal-energy to the micro-coaxial wire to remove the exposed portion of the insulating layer of the micro-coaxial wire to expose a portion of a core wire of the micro-coaxial wire, and a bonding head configured to bond the exposed portion of the core wire of the micro-coaxial wire to the bonding surface.

In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

Semiconductor packages and methods for forming a semiconductor package are presented. The semiconductor package includes a package substrate having a die region on a first surface thereof. The package includes a die having a sensing element. The die is disposed in the die region and is electrically coupled to contact pads disposed on the first surface of the package substrate by insulated wire bonds. A cap is disposed over the first surface of the package substrate. The cap and the first surface of the package substrate define an inner cavity which accommodates the die and the insulated wire bonds. The insulated wire bonds are directly exposed to an environment through at least one access port of the package.

Semiconductor packages and methods for forming a semiconductor package are presented. The semiconductor package includes a package substrate having a die region on a first surface thereof. The package includes a die having a sensing element. The die is disposed in the die region and is electrically coupled to contact pads disposed on the first surface of the package substrate by insulated wire bonds. A cap is disposed over the first surface of the package substrate. The cap and the first surface of the package substrate define an inner cavity which accommodates the die and the insulated wire bonds. The insulated wire bonds are directly exposed to an environment through at least one access port of the package.

A die package having mixed impedance leads where a first lead has a first metal core, and a dielectric layer surrounding the first metal core, and a second lead has a second metal core, and a second dielectric layer surrounding the second metal core, with the dielectric thicknesses differing from each other. A method of making a die package having leads with different impedances formed by connecting the die package to the die substrate connection pads via a first wirebond having a first metal core, depositing a dielectric layer on the wirebond metal core, metalizing the dielectric layer, connecting the die package to the die substrate connection pads via a second wirebond having a second metal core, depositing a dielectric layer on the second wirebond second metal core, and metalizing the dielectric layer on the second metal core, such that the first wirebond has a different impedance than the second wire bond.

A semiconductor package includes a semiconductor die, a substrate for supporting the semiconductor die, an encapsulant covering the semiconductor die and at least part of the substrate, and a die attach material attaching the semiconductor die to the substrate. The die attach material includes molecules having a first functional group with at least one free electron pair and a second functional group chemically reacted or reactable with the encapsulant in a way that promotes adhesion with the encapsulant. A corresponding method of manufacturing the semiconductor package is also described.