A power electronic arrangement having a power semiconductor module and an external load-connecting element is provided with the external load-connecting element has a first connection device, and the power semiconductor module has a housing, a base plate and an internal load-connecting element with a second connection device, wherein the base plate has a first cut out through which the first connection device extends into the interior of the power semiconductor module and is connected there in a frictionally locking and electrically conductive fashion to a second connection device of the internal load-connecting element.

A semiconductor package according to the exemplary embodiments of the disclosure includes a base substrate including a base bonding pad, a first semiconductor chip disposed on the base substrate, a first adhesive layer provided under the first semiconductor chip, a first bonding pad provided in a bonding region on an upper surface of the first semiconductor chip, a first bonding wire interconnecting the base bonding pad and the first bonding pad, and a crack preventer provided in a first region at the upper surface of the first semiconductor chip. The crack preventer includes dummy pads provided at opposite sides of the first region and a dummy wire interconnecting the dummy pads.

A semiconductor wafer includes pairs of semiconductor dies having test pads which are electrically coupled to each other to enable testing of pairs of semiconductor dies together at the same time. In this way, even wafers having large numbers of semiconductor dies can be tested with a semiconductor test assembly in a single touch-down test process.

An apparatus is provided which comprises: a plurality of circuit regions in an integrated circuit die, wherein the circuit regions comprise circuit components formed in semiconductor material, a plurality of interconnect regions to route power to the circuit regions from a surface of the integrated circuit die, wherein the interconnect regions comprise conductive traces within dielectric material and a plurality of wirebond pads on the surface of the integrated circuit die, wherein the wirebond pads comprise a substantially even distribution over the surface of the integrated circuit die. Other embodiments are also disclosed and claimed.

A semiconductor device of an embodiment includes a substrate including a semiconductor element, a first electrode on the substrate and electrically connected to the semiconductor element, a second electrode on the substrate and electrically connected to the semiconductor element, and a terminal spaced from the first electrode, the substrate, and the second electrode. A first bonding wire has a first bonding portion bonded to the second electrode at a first end and a second bonding portion bonded to the terminal at a second end. A second bonding wire has a third bonding portion bonded to the second electrode at a first end and a fourth bonding portion bonded to the terminal at a second end. Each of the first and second bonding wires comprise copper and have a diameter less than or equal to 100 m.

A storage device includes a substrate of a memory package that includes a first pin pad, a controller mounted on the substrate and electrically connected to the first pin pad, the controller being configured to manage data communications on a data channel, and a first memory die. The first memory die includes a front pin pad electrically connected to the first pin pad of the substrate by way of a first bond wire, a rear pin pad, a conductor segment electrically connecting the front pin pad and the rear pin pad of the first memory die, and a plurality of memory cells configured to provide non-volatile storage accessible by way of the data channel.

A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.

A memory device package and a method of manufacturing a memory device package. The memory device package includes a substrate having a first chip region, a second chip region, and a first scribe line region connected between the first chip region and the second chip region. The memory device package also includes a first memory chip disposed over the first chip region and a second memory chip disposed over the second chip region.

A memory device package and a method of manufacturing a memory device package. The memory device package includes a substrate having a first chip region, a second chip region, and a first scribe line region connected between the first chip region and the second chip region. The memory device package also includes a first memory chip disposed over the first chip region and a second memory chip disposed over the second chip region.

A semiconductor device including a first semiconductor switching element having a first gate pad, a plurality of first emitter pads, and a first collector pad, a first wire for connecting adjacent pads out of the plurality of first emitter pads, a first output wire for connecting one of the plurality of first emitter pads to an output, a first controller for applying a gate voltage to the first gate pad, a first emitter wire that is directly connected to a first extraction pad which is any one pad of the plurality of first emitter pads, and is connected to the first controller to give a ground potential of the first controller, and a second semiconductor switching element having a second gate pad, a second emitter pad and a second collector pad connected to the output.