A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern. The first side portion and the second side portion are aligned. The first control electrode and the second control electrode are aligned. The second circuit pattern are aligned with the first control electrode and the second control electrode.

A method for fabricating an electrical or electronic device package includes providing a first plateable encapsulation layer; activating first selective areas on a main surface of the first plateable encapsulation layer; forming a first metallization layer by electrolytic or electroless plating on the first activated areas; and fabricating a passive electrical component on the basis of the first metallization layer.

A method of fabricating an electronic power module by additive manufacturing, the electronic module including a substrate having an electrically insulating plate presenting opposite first and second faces, with a first metal layer arranged directly on the first face of the insulating plate, and a second metal layer arranged directly on the second face of the insulating plate. At least one of the metal layers is made by a step of depositing a thin layer of copper and a step of annealing the metal layer, and the method further includes a step of forming at least one thermomechanical transition layer on at least one of the first and second metal layers, the at least one thermomechanical transition layer including a material presenting a coefficient of thermal expansion that is less than that of the metal of the metal layer.

Each of a plurality of light emitting elements has a hexagonal shape with a center. An interior angle at each of corners is less than 180°. The plurality of light emitting elements include a first light emitting element having a first lateral side surface and a second light emitting element having a second lateral side surface. An orientation of the hexagonal shape of the second light emitting element is rotated by 30 degrees plus 30°+60°×N (N is an integer) with respect to the center of the second light emitting element relative to an orientation of the hexagonal shape of the first light emitting element such that the second lateral side surface is not parallel to the first lateral side surface.

A semiconductor device comprises; a lead frame having leads and a die pad; a printed circuit board including an electrode for the connection of each of the leads and the die pad, a wiring pattern, and an opening exposing a part of a surface of the die pad; the semiconductor element for processing a high frequency signal, mounted on a surface of a metal block bonded to the surface of the die pad exposed through the opening, and connected to the wiring pattern with a metal wire; electronic components connected to the wiring pattern and mounted on a surface of the printed circuit board; and a sealing resin to seal the printed circuit board, the semiconductor element, the electronic components, and the metal wire so as to expose rear surfaces of the leads and the die pad.

A semiconductor device includes a first lead, a second lead, a control element, an insulating element, and a driver element. The control element and insulating element are mounted on a first pad portion of the first lead, while the driver element on a second pad portion of the second lead. In plan view, the first pad portion has a first edge adjacent to the second pad portion in a first direction and extending in a second direction perpendicular to the first direction. The first edge has first and second ends opposite in the second direction. The second pad portion has a second edge adjacent to the first edge and extending in the second direction. The second edge has third and fourth ends opposite in the second direction. One of the third and fourth end is located between the first and second end in the second direction.

A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

A semiconductor package may include a substrate including a first coupling terminal and a second coupling terminal, a first chip disposed on the substrate, the first chip including a first pad and a second pad, and a connection structure connecting the first coupling terminal to the first pad. A portion of the connection structure may be in contact with a first side surface of the first chip. The connection structure may include a connection conductor electrically connecting the first pad to the first coupling terminal.

A thermally conductive sheet has a thermally conductive resin composition layer, wherein the thermally conductive resin composition layer is made of a thermally conductive resin composition (1) including an inorganic filler and a binder resin (3). The inorganic filler includes a boron nitride particle (2), the content of the inorganic filler in the thermally conductive resin composition layer is 65% by volume or more, and the boron nitride particle (2) has an average aspect ratio of 7 or less, which is calculated from a major axis and a minor axis of a primary particle measured by a specific method. The thermally conductive resin composition layer has a thickness of 200 μm or less.

Provided is a metal jointed body, joined by solid-phase joining in the atmosphere, in which no protrusion of molten joining material occurs, that improves dimensional stability. A metal jointed body is formed by (A) making Ag films of two metal laminated bodies opposed to each other, the metal jointed body being configured by sequentially laminating a Zn film and an Ag film on an Al substrate serving as a member to be joined, and (B) bringing the Ag films into contact with each other, then (C) heating is performed while pressurizing, and closely adhering and solid-phase joining the Ag films to each other. The completed metal jointed body is a portion where Al—Ag alloy layers are provided on both sides of an Ag—Zn—Al alloy layer to join the Al substrates to each other.