A semiconductor device includes a cavity package including a substrate and at least one output lead disposed higher than the substrate, in a side view, to create a cavity. A transistor die is disposed within the cavity. A top surface of the transistor die is lower than a top surface of the output lead when viewed in the side view. A first substrate is disposed within the cavity and is separate from the transistor die. A top surface of the first substrate is lower than the top surface of the output lead in the side view. A shunt wire connects an output of the transistor die to the first substrate, and an output wire connects the output of the transistor substrate to the output lead. The shunt wire or the output wire is disposed and shaped to minimize self-inductance and to minimize mutual inductance with the shunt wire.

An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.

A package structure is provided. The package structure includes a substrate, a first electronic component, an interposer, a conductive wire, and a conductive adhesive. The first electronic component and the interposer are disposed over the substrate. The conductive wire connects the first electronic component to the interposer. The conductive adhesive (connects the interposer to the substrate.

In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.

Technologies for radiofrequency optimized interconnects for a quantum processor are disclosed. In the illustrative embodiment, signals are carried in coplanar waveguides on a surface of a quantum processor die. A ground ring surrounds the signals and is connected to the ground conductors of each coplanar waveguide. Wire bonds connect the ground ring to a ground of a circuit board. The wire bonds provide both an electrical connection from the quantum processor die to the circuit board as well as increased thermal coupling between the quantum processor die and the circuit board, increasing cooling of the quantum processor die.

A manufacturing method of a semiconductor device includes a step of preparing a test object including a body for sealing a semiconductor chip and a lead terminal, a step of preparing a test socket including a first contact pin, and a step of electrically testing the semiconductor chip by contacting the first contact pin with the lead terminal. The lead terminal includes a lead upper surface located on an upper surface side of the body and a lead bottom surface located on an bottom surface side of the body. The lead terminal includes a protruding portion protruding from the body, and a connecting portion. The lead terminal further includes a bending portion that connects the protruding portion and the connecting portion. Then, in the electrical test step, the first contact pin is contacted with the lead bottom surface of the protruding portion.

An embodiment of the present disclosure provides a new integrated package electronic device structure, including a packaging component, including a packaging frame and a packaging substrate, and at least two circuit modules, being packaged on one side of the packaging substrate within the packaging frame, wherein the packaging frame including a merge point for the at least two circuit modules. In the present disclosure, by setting the merge points of at least two circuits packaged within the packaging frame on the packaging frame, the problem of occupying a large area when the integrated electronic device is applied due to setting the merge points on the packaging substrate is avoided, the utilization rate of the integrated electronic device is improved, and the integration and industrialization of the electronic device is facilitated.

An electric circuit in which a first switching element and a first diode element are connected in antiparallel to form an upper arm and a second semiconductor element and a second diode element are connected in antiparallel to form a lower arm, and the upper arm and the lower arm are connected in series. A gate current path in one of the upper and lower arms and a reverse recovery path in the other one of the upper and lower arms are disposed close enough and extend at least partially in parallel to each other, so as to generate mutual inductance by the reverse recovery current flowing through the reverse recovery path and the gate current flowing through the gate current path.