A semiconductor device includes a semiconductor element, a mount portion, and a sintered metal bond. The semiconductor element includes a body and an electrode pad. The body has an obverse surface facing forward in a first direction and a reverse surface facing rearward in the first direction. The electrode pad covers the element reverse surface. The mount portion supports the semiconductor element. The sintered metal bond electrically bonds the electrode pad and the mount portion. The sintered metal bond includes a first rear edge and a first front edge spaced forward in the first direction from the first rear edge. The electrode pad includes a second rear edge and a second front edge spaced forward in the first direction from the second rear edge. The first front edge of the metal bond is spaced rearward in the first direction from the second front edge of the pad.

An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

An optoelectronic component includes a housing including a plastic material and a first lead frame section at least partly embedded in the plastic material, a first recess and a second recess, wherein a first upper section of an upper side of the first lead frame section is not covered by the plastic material in the first recess, a second upper section of the upper side of the first lead frame section is not covered by the plastic material in the second recess, the first recess and the second recess are separated from one another by a section of the plastic material, an optoelectronic semiconductor chip is arranged in the first recess, and no optoelectronic semiconductor chips is arranged in the second recess.

An optoelectronic component includes a housing including a plastic material and a first lead frame section at least partly embedded in the plastic material, a first recess and a second recess, wherein a first upper section of an upper side of the first lead frame section is not covered by the plastic material in the first recess, a second upper section of the upper side of the first lead frame section is not covered by the plastic material in the second recess, the first recess and the second recess are separated from one another by a section of the plastic material, an optoelectronic semiconductor chip is arranged in the first recess, and no optoelectronic semiconductor chips is arranged in the second recess.

A photocoupler of an embodiment includes an input terminal, an output terminal, a first MOSFET, a second MOSFET, a semiconductor light receiving element, a semiconductor light emitting element, and a resin layer. The first MOSFET is joined onto the third lead. The second MOSFET is joined onto the fourth lead. The semiconductor light receiving element is joined to each of the first junction region and the second junction region. The semiconductor light receiving element includes a light receiving region provided in a central part of a surface on opposite side from a surface joined to the first and second MOSFET. The resin layer seals the first and second MOSFETs, the semiconductor light receiving element, the semiconductor light emitting element, an upper surface and a side surface of the input terminal, and an upper surface and a side surface of the output terminal.

A semiconductor sensor assembly for use in a corrosive environment comprises a processing device comprising at least one first bondpad of a material which may be corroded by a corrosive component in a corrosive environment; a sensor device comprising at least one second bondpad consisting of and/or being covered by a first corrosion resistant material; at least one bonding wire for making a signal connection between the at least one first bondpad of the processing device and the second bondpad of the sensor device. The processing device is partially overmoulded by a second corrosion resistant material, and is partially exposed to a cavity in the corrosion resistant material, with the sensor device being present in the cavity. A redistribution layer is provided to enable signal connection between the processing device and the sensor device is physically made in the cavity while the second corrosion resistant material covers the first bondpad.

A semiconductor device has wettable corner leads. A semiconductor die is mounted on a lead frame. Die bonding pads are electrically connected to leads of the lead frame. The die and electrical connections are encapsulated with a mold compound. The leads are exposed and flush with the corners of the device. The leads include dimples so that they are wettable, which facilitates inspection when the device is mounted on a circuit board or substrate.

A semiconductor device has wettable corner leads. A semiconductor die is mounted on a lead frame. Die bonding pads are electrically connected to leads of the lead frame. The die and electrical connections are encapsulated with a mold compound. The leads are exposed and flush with the corners of the device. The leads include dimples so that they are wettable, which facilitates inspection when the device is mounted on a circuit board or substrate.

A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.