A lead frame structure for connecting a semiconductor chip to a connection target includes a conductive member electrically connecting the semiconductor chip and the connection target. The conductive member includes a first bonding part having a main surface, disposed on one side of the conductive member and being bonded to the semiconductor chip, a second bonding part having a main surface, being disposed on another side of the conductive member that is spaced from the one side in one direction and being bonded to the connection target, and a joining part having a wall section intersecting the main surface of the first bonding part and the main surface of the second bonding part, the wall section joining a portion of the first bonding part to a portion of the second bonding part.

Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

To improve yield and reliability at the time when a plurality of semiconductor elements used for a semiconductor device is arranged in parallel. A semiconductor device according to the present invention includes a first submodule which includes a first semiconductor element sandwiched between a first conductor and a second conductor and a first lead wire which transmits a control signal of the first semiconductor element, a second submodule which includes a second semiconductor element sandwiched between a third conductor and a fourth conductor and a second lead wire which transmits a control signal of the second semiconductor element, a fifth conductor which is formed to cover the first conductor and the third conductor and is bonded to the first conductor and the third conductor, and a sixth conductor which is formed to cover the second conductor and the fourth conductor and is bonded to the second conductor and the fourth conductor, in which the first conductor is formed so as not to overlap with a part of the first lead wire facing a first connection portion to be connected to the second lead wire.

A leadless packaged semiconductor device includes a metal substrate having at least a first through-hole aperture having a first outer ring and a plurality of cuts through the metal substrate to define spaced apart metal pads on at least two sides of the first through-hole aperture. A semiconductor die that has a back side metal (BSM) layer on its bottom side and a top side with circuitry coupled to bond pads is mounted top side up on the first outer ring. A metal die attach layer is directly between the BSM layer and walls of the metal substrate bounding the first through-hole aperture that provides a die attachment that fills a bottom portion of the first through-hole aperture. Bond wires are between metal pads and the bond pads. A mold compound is also provided including between adjacent ones of the metal pads.

A semiconductor package having an aperture in a die pad and solder in the aperture coplanar with a surface of the package is disclosed. The package includes a die pad, a plurality of leads, and a semiconductor die coupled to the die pad with a die attach material. A cavity or aperture is formed through the die pad to expose a portion of the die attach material. Multiple solder reflows are performed to reduce the presence of voids in the die attach material. In a first solder reflow, the voids of trapped gas that form when attaching the die to the die pad are released. Then, in a second solder reflow, solder is added to the aperture coplanar with a surface of the die pad. The additional solder can be the same material as the die attach material or a different material.

A semiconductor package having an aperture in a die pad and solder in the aperture coplanar with a surface of the package is disclosed. The package includes a die pad, a plurality of leads, and a semiconductor die coupled to the die pad with a die attach material. A cavity or aperture is formed through the die pad to expose a portion of the die attach material. Multiple solder reflows are performed to reduce the presence of voids in the die attach material. In a first solder reflow, the voids of trapped gas that form when attaching the die to the die pad are released. Then, in a second solder reflow, solder is added to the aperture coplanar with a surface of the die pad. The additional solder can be the same material as the die attach material or a different material.

A first wafer including a first substrate, first semiconductor devices overlying the first substrate, and first dielectric material layers overlying the first semiconductor devices is provided. A sacrificial material layer is formed over a top surface of a second wafer including a second substrate. Second semiconductor devices and second dielectric material layers are formed over a top surface of the sacrificial material layer. The second wafer is attached to the first wafer such that the second dielectric material layers face the first dielectric material layers. A plurality of voids is formed through the second substrate. The sacrificial material layer is removed by providing an etchant that etches a material of the sacrificial material layer through the plurality of voids. The substrate is detached from a bonded assembly including the first wafer, the second semiconductor devices, and the second dielectric material layers upon removal of the sacrificial material layer.