According to one embodiment, a semiconductor device includes a wiring board having a first surface. A first element is disposed on the first surface of the wiring board. A first resin layer covers the first element. A second element is larger than the first element and disposed on the first resin layer. The second element is superposed above the first element. A reinforcement member is disposed at a peripheral portion of the first resin layer and includes an edge disposed inside of the first resin layer. The reinforcement member has an upper surface above the first surface of the wiring board. The reinforcement member has a coefficient of linear expansion lower than the first resin layer. An encapsulating resin material, over the first surface of the wiring board, covers the first element, the second element, the first resin layer, and the reinforcement member.

The present disclosure relates to a semiconductor device including a first high electron mobility transistor (HEMT) device disposed within a semiconductor structure and having a first source, a first drain, and a first gate; a second HEMT device disposed within the semiconductor structure and having a second source, a second drain, and a second gate, the second source coupled to the first drain; and a diode-connected transistor device disposed within the semiconductor structure and comprising a third source, a third gate, and a third drain, the third drain coupled to the second gate.

The present disclosure relates to a semiconductor device including a first high electron mobility transistor (HEMT) device disposed within a semiconductor structure and having a first source, a first drain, and a first gate; a second HEMT device disposed within the semiconductor structure and having a second source, a second drain, and a second gate, the second source coupled to the first drain; and a diode-connected transistor device disposed within the semiconductor structure and comprising a third source, a third gate, and a third drain, the third drain coupled to the second gate.

A memory die including a three-dimensional array of memory elements and a logic die including a peripheral circuitry that support operation of the three-dimensional array of memory elements can be bonded by die-to-die bonding to provide a bonded assembly. External bonding pads for the bonded assembly can be provided by forming recess regions through the memory die or through the logic die to physically expose metal interconnect structures within interconnect-level dielectric layers. The external bonding pads can include, or can be formed upon, a physically exposed subset of the metal interconnect structures. Alternatively or additionally, laterally-insulated external connection via structures can be formed through the bonded assembly to multiple levels of the metal interconnect structures. Further, through-dielectric external connection via structures extending through a stepped dielectric material portion of the memory die can be physically exposed, and external bonding pads can be formed thereupon.

A memory die including a three-dimensional array of memory elements and a logic die including a peripheral circuitry that support operation of the three-dimensional array of memory elements can be bonded by die-to-die bonding to provide a bonded assembly. External bonding pads for the bonded assembly can be provided by forming recess regions through the memory die or through the logic die to physically expose metal interconnect structures within interconnect-level dielectric layers. The external bonding pads can include, or can be formed upon, a physically exposed subset of the metal interconnect structures. Alternatively or additionally, laterally-insulated external connection via structures can be formed through the bonded assembly to multiple levels of the metal interconnect structures. Further, through-dielectric external connection via structures extending through a stepped dielectric material portion of the memory die can be physically exposed, and external bonding pads can be formed thereupon.

The present disclosure provides a semiconductor packaging method and a semiconductor package device. The method includes providing a chip, where the chip includes a chip substrate having a front surface and a back surface; soldering pads disposed at the front surface of a chip substrate surrounding the photosensitive region; a metal part formed on a side of each soldering pad facing away from the chip substrate; and a transparent protective layer formed on the front surface of the chip substrate. A first end of the metal part away from a corresponding soldering pad is in coplanar with the transparent protective layer; and the first end of the metal part is not covered by the transparent protective layer. The method further includes electrically connecting the first end of the metal part to a circuit board using a conductive connection part to electrically connect the chip with the circuit board.

The present disclosure provides a semiconductor packaging method and a semiconductor package device. The method includes providing a chip, where the chip includes a chip substrate having a front surface and a back surface; soldering pads disposed at the front surface of a chip substrate surrounding the photosensitive region; a metal part formed on a side of each soldering pad facing away from the chip substrate; and a transparent protective layer formed on the front surface of the chip substrate. A first end of the metal part away from a corresponding soldering pad is in coplanar with the transparent protective layer; and the first end of the metal part is not covered by the transparent protective layer. The method further includes electrically connecting the first end of the metal part to a circuit board using a conductive connection part to electrically connect the chip with the circuit board.

A support die includes complementary metal-oxide-semiconductor (CMOS) devices, front support-die bonding pads electrically connected to a first subset of the peripheral circuitry, and backside bonding structures electrically connected to a second subset of the peripheral circuitry. A first memory die including a first three-dimensional array of memory elements is bonded to the support die. First memory-die bonding pads of the first memory die are bonded to the front support-die bonding pads. A second memory die including a second three-dimensional array of memory elements is bonded to the support die. Second memory-die bonding pads of the second memory die are bonded to the backside bonding structures.

A support die includes complementary metal-oxide-semiconductor (CMOS) devices, front support-die bonding pads electrically connected to a first subset of the peripheral circuitry, and backside bonding structures electrically connected to a second subset of the peripheral circuitry. A first memory die including a first three-dimensional array of memory elements is bonded to the support die. First memory-die bonding pads of the first memory die are bonded to the front support-die bonding pads. A second memory die including a second three-dimensional array of memory elements is bonded to the support die. Second memory-die bonding pads of the second memory die are bonded to the backside bonding structures.

A semiconductor device includes an insulating support member, a first and a second conductive layer, a first semiconductor element, a first lead, a first detection conductor and a first gate conductor. The first and second conductive layers are disposed on a front surface of the insulating support member. The first semiconductor includes a first and a second electrode on the same side, and a third electrode disposed on the other side and electrically connected to the first conductive layer. The first lead is connected to the first and second conductive layer. The first detection conductor is connected to the first electrode. The first gate conductor is connected to the second electrode. At least one of the first detection conductor and the first gate conductor has an end connected to the first semiconductor element. The end has a coefficient of linear expansion smaller than that of the first conductive layer.