A semiconductor device suitable for preventing malfunction is provided. The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating with the semiconductor chip 1. The first edges 49a extend in the direction x, whereas the second edges extend in the direction y. The plurality of bumps 5 include a first bump 51 electrically connected to the first electrode pad 21 and a second bump 52 electrically connected to the first electrode pad 21. The first bump 51 is arranged at one end in the direction x and one end in the direction y.

A semiconductor device suitable for preventing malfunction is provided. The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating with the semiconductor chip 1. The first edges 49a extend in the direction x, whereas the second edges extend in the direction y. The plurality of bumps 5 include a first bump 51 electrically connected to the first electrode pad 21 and a second bump 52 electrically connected to the first electrode pad 21. The first bump 51 is arranged at one end in the direction x and one end in the direction y.

A semiconductor device includes a plurality of wire bonds formed on a surface of the semiconductor device by bonding each of a plurality of copper wires onto corresponding ones of a plurality of aluminum pads; a protective material is applied around the plurality of wire bonds, the protective material having a first pH; and at least a portion of the semiconductor device and the protective material are encapsulated with an encapsulating material having a second pH, wherein the first pH of the protective material is for neutralizing the second pH of the encapsulating material around the plurality of wire bonds.

A semiconductor device includes a plurality of wire bonds formed on a surface of the semiconductor device by bonding each of a plurality of copper wires onto corresponding ones of a plurality of aluminum pads; a protective material is applied around the plurality of wire bonds, the protective material having a first pH; and at least a portion of the semiconductor device and the protective material are encapsulated with an encapsulating material having a second pH, wherein the first pH of the protective material is for neutralizing the second pH of the encapsulating material around the plurality of wire bonds.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

A semiconductor device including a package substrate having, at the periphery of the main surface thereof, bonding leads disposed in a row, a semiconductor chip mounted inside of the row of the bonding leads on the main surface of the package substrate, wires for connecting pads of the semiconductor chip and the bonding leads of the substrate, a sealing body for resin sealing the semiconductor chip and the wires, and solder bumps disposed on the back surface of the package substrate. The top of a loop of each of the wires is disposed outside the wire connecting portion so that the wire connection between the bonding leads and the pads of the semiconductor chip has a stable loop shape to prevent wire connection failure.

This disclosure provides a package substrate and its fabrication method. The package substrate includes: a dielectric body; a first circuit device disposed in the dielectric body, the first circuit device comprising a first terminal and a second terminal at a top of the first circuit device; a second circuit device disposed in the dielectric body, the second circuit device comprising a third terminal at a top of the second circuit device; a first conductive pillar formed in the dielectric body and connected to the first terminal; a first bonding wire connecting the second terminal and the third terminal; and a redistribution layer comprising a first conductive wire formed on the dielectric body, the conductive wire connected to the first conductive pillar.

An LED leadframe or LED substrate includes a main body portion having a mounting surface for mounting an LED element thereover. A reflection metal layer serving as a reflection layer for reflecting light from the LED element is disposed over the mounting surface of the main body portion. The reflection metal layer comprises an alloy of platinum and silver or an alloy of gold and silver. The reflection metal layer efficiently reflects light emitted from the LED element and suppresses corrosion due to the presence of a gas, thereby capable of maintaining reflection characteristics of light from the LED element.

A semiconductor device includes a carrier, a chip attached to the carrier, a sealant vapor deposited over the chip and the carrier, and encapsulation material deposited over the sealed chip and the sealed carrier.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.