An electronic component, in one embodiment, includes a semiconductor die, a die pad supporting the semiconductor die, and a plurality of leads that include a first set of metal lines and a second set of metal lines. The first set of metal lines cross over the second set of metal lines at crossings. The first set of metal lines is separated by a molding compound from the second set of metal line at the crossings. The first set of metal lines is in a same first plane parallel to the semiconductor die. Each of the second set of metal lines include a first portion oriented along the first set of metal lines and disposed in the first plane, and a second portion offset from the first portion. A plurality of electrical connections couple the semiconductor die to the plurality of leads.

A power semiconductor device includes a power semiconductor element, a controlling element, a first lead frame and a second lead frame, respectively, a first metal wire electrically connecting the power semiconductor element and the first lead frame, and a sealing body covering these components. The first lead frame includes a first inner lead having a connecting surface to which one end of the first metal wire is connected. Among surfaces of the sealing body, in a side surface, a resin inlet mark is formed in a side surface portion from which the first lead frame and the second lead frame do not project, the resin inlet mark being greater in surface roughness than another area. The resin inlet mark is formed opposite to a side where the first metal wire is positioned on the connecting surface when seen in the direction along the mounting surface.

A microelectronic package includes at least one microelectronic element having a front surface defining a plane, the plane of each microelectronic element parallel to the plane of any other microelectronic element. An encapsulation region overlying edge surfaces of each microelectronic element has first and second major surfaces substantially parallel to the plane of each microelectronic element and peripheral surfaces between the major surfaces. Wire bonds are electrically coupled with one or more first package contacts at the first major surface of the encapsulation region, each wire bond having a portion contacted and surrounded by the encapsulation region. Second package contacts at an interconnect surface being one or more of the second major surface and the peripheral surfaces include portions of the wire bonds at such surface, and/or electrically conductive structure electrically coupled with the wire bonds.

Semiconductor devices may include a first semiconductor chip, a first redistribution layer on a bottom surface of the first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a second redistribution layer on a bottom surface of the second semiconductor chip, a mold layer extending on sidewalls of the first and second semiconductor chips and on the bottom surface of the first semiconductor chip, and an external terminal extending through the mold layer and electrically connected to the first redistribution layer. The second redistribution layer may include an exposed portion. The first redistribution layer may include a first conductive pattern electrically connected to the first semiconductor chip and a second conductive pattern electrically insulated from the first semiconductor chip. The exposed portion of the second redistribution layer and the second conductive pattern of the first redistribution layer may be electrically connected by a first connection wire.

A semiconductor package includes a package substrate and semiconductor chips stacked on the package substrate. The package substrate may include at least one first chip enablement finger, at least one second chip enablement finger, and a chip enablement pad selection finger. Each of the semiconductor chips includes a first chip enablement pad connected to the at least one first chip enablement finger, a second chip enablement pad connected to the at least one second chip enablement finger, and a chip enablement pad selection pad connected to the chip enablement pad selection finger. The first chip enablement pads of the semiconductor chips or the second chip enablement pads of the semiconductor chips are optionally activated by a signal applied to the chip enablement pad selection finger.

A high frequency amplifier includes a high frequency amplifier transistor integrated in a first die of a first semiconductor technology and a matching circuit. The high frequency amplifier transistor has an input terminal, an output terminal and a reference terminal. The reference terminal is coupled to a reference potential. The matching circuit includes at least a first inductive bondwire, a second inductive bondwire and a capacitive element arranged in series with said inductive bondwires. The capacitive element is integrated in a second die of a second semiconductor technology different from the first semiconductor technology. The second semiconductor technology includes an isolating substrate for conductively isolating the capacitive element from a support attached at a first side to the second die. The capacitive element includes a first plate electrically coupled to a first bondpad of the second die and a second plate electrically coupled to a second bondpad of the second die.

A device includes a carrier and a semiconductor chip arranged over a surface of the carrier. The semiconductor chip includes a control electrode and a load electrode. A first lead is electrically coupled to the control electrode and extends away from the control electrode in a first direction. A second lead is electrically coupled to the load electrode and extends away from the load electrode in a second direction opposite the first direction.

A light emitting device including a package body having a first cavity; an electrode having a first electrode and a second electrode in the package body; at least one light emitting chip on the first electrode; a resin material in the first cavity; and a lens on the package body and the at least one light emitting chip. Further, the first electrode and the second electrode are separated by the package body, the package body comprises a first stepped portion exposed between the first electrode and the second electrode, the first electrode comprises a second cavity, and the at least one light emitting chip is disposed on the second cavity of the first electrode.

Provided are multi-chip packages. A multi-chip package includes a first memory chip and a second memory chip on a printed circuit board; a memory controller electrically connected to the first memory chip and the second memory chip via a first bonding wire and a second bonding wire; and a strength control module configured to control a drive strength of each of a first output driver of the first memory chip and a second output driver of the second memory chip, wherein the memory controller includes an interface circuit configured to receive each of first test data and second test data from the first output driver and the second output driver in which the drive strength is set by the strength control module, and output detection data for detecting whether the first bonding wire and the bonding wire are short-circuited based on the first and second test data.

A semiconductor package including a mounting board, a first semiconductor chip on the mounting board, the first semiconductor chip having a first peripheral area, a second peripheral area, and a central area between the first and second peripheral areas, the central area having penetrating electrodes formed therein, a second semiconductor chip on the first peripheral area, the second semiconductor chip including a second pad on a top surface thereof, a third semiconductor chip on the second peripheral area, the third semiconductor chip including a third pad on a top surface thereof, and conductive wirings extending from the second and third pads, respectively, the conductive wirings electrically connected to the penetrating electrodes, respectively, may be provided.