The semiconductor device improves heat dissipation by loading a diode and a MOSFET or IGBT in a single package. A drain electrode disposed on a rear surface of a MOSFET chip is soldered to an upper surface of a first lead frame, and a cathode electrode disposed on a rear surface of a diode chip is soldered to an upper surface of a second lead frame. Rear surfaces of the first lead frame and second lead frame to which neither the diode chip nor the MOSFET chip is connected are disposed so as to be exposed from a sealing resin.

A power semiconductor module includes a semiconductor switching element, a gate control pattern to which a gate electrode of the semiconductor switching element is connected, a source control pattern to which a source electrode of the semiconductor switching element is connected, a capacitor to form a low-pass filter, a capacitor arrangement pattern to which one end of the capacitor is connected, and a wire. The other end of the capacitor is connected to the source control pattern. The wire electrically connects the capacitor arrangement pattern and the gate control pattern.

LTCC structure extends between top and bottom surfaces, with at least one cavity being formed within the structure and extending from the top surface inwardly in the direction of the bottom surface. A die is disposed within the cavity a top surface of the die is positioned flush with the top surface of the package, resulted in the shortest length of the wire box connecting the die with the LTCC structure and ultimately reducing the inductance.

A multi-chip package may include a package substrate including a first substrate pad and a second substrate pad, first semiconductor chips stacked on the package substrate in a steplike shape along a first direction, second semiconductor chips stacked on the first semiconductor chips in a steplike shape along a second direction opposite the first direction, first pad wires electrically connecting first bonding pads of the first semiconductor chips with each other, second pad wires electrically connecting second bonding pads of the second semiconductor chips with each other, a first substrate wire electrically connecting the first substrate pad with a first bonding pad of any one among the first semiconductor chips except for a lowermost first semiconductor chip, and a second substrate wire electrically connecting the second substrate pad with a second bonding pad of any one among the second semiconductor chips except for a lowermost second semiconductor chip.

Packaged RF transistor amplifiers are provided that include a flat no-lead overmold package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads and an RF transistor amplifier die mounted on the die pad and at least partially covered by the overmold encapsulation. These packaged RF transistor amplifiers may have an output power density of at least 3.0 W/mm.sup.2.

In a conventional semiconductor chip, the source electrode and the sense pad electrode for current detection are provided separately and distanced from each other on the front surface of the semiconductor chip. The area occupied by the sense pad electrode must be several times the area of a MOSFET cell unit. Therefore, there is a problem that the area of the sense pad electrode is enlarged relative to the source electrode. Provided is a semiconductor device including a semiconductor substrate; a front surface electrode provided above the semiconductor substrate; a first wire for a first terminal connected to the front surface electrode; and a second wire for current sensing connected to the front surface electrode. A resistance of a path through which current flows through the second wire is higher than a resistance of a path through which the current flows through the first wire.

A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.

A first integrated circuit chip is assembled to a second integrated circuit chip with a back-to-back surface relationship. The back surfaces of the integrated circuit chips are attached to each other using one or more of an adhesive, solder or molecular bonding. The back surface of at least one the integrated circuit chips is processed to include at least one of a trench, a cavity or a saw cut.

A power semiconductor module includes a leadframe having a first die pad, a second die pad separated from the first die pad, a first power lead formed as an extension of the first die pad, a second power lead separated from the first and second die pads, and a first connection region formed as an extension of the second power lead alongside the second die pad. A first plurality of power semiconductor dies is attached to the first die pad and electrically coupled in parallel. A second plurality of power semiconductor dies is attached to the second die pad and electrically coupled in parallel. A first electrical connection extends between the first plurality of power semiconductor dies and the second die pad in a first direction. A second electrical connection extends between the second plurality of power semiconductor dies and the first connection region in the first direction.

An apparatus includes: a transistor including an input terminal for an input signal and an output terminal for an output signal; a matching circuit configured to match a load impedance regarding a fundamental harmonic of at least one of the input signal and the output signal to an impedance of the transistor and include a first conductive film being laminated over the transistor and coupled to at least one of the input terminal and the output terminal; and a processing circuit configured to adjust an impedance regarding a harmonic of at least one of the input signal and the output signal and include a second conductive film being laminated over the first conductive film and coupled to at least one of the input terminal and the output terminal through a via which penetrates through a dielectric layer sandwiched between the first conductive film and the second conductive film.