Disclosed is a semiconductor device including a semiconductor die, a base member, a side wall, first and second conductive films, and first and second conductive leads. The base member has a conductive main surface including a region that mounts the semiconductor die. The side wall surrounds the region and is made of a dielectric. The side wall includes first and second portions. The first and second conductive films are provided on the first and second portions, respectively and are electrically connected to the semiconductor die. The first and second conductive leads are conductively bonded to the first and second conductive films, respectively. At least one of the first and second portions includes a recess on its back surface facing the base member, and the recess defines a gap between the at least one of the first and second portions below the corresponding conductive film and the base member.

A semiconductor package including a first lower stack on a substrate and including first lower semiconductor chips, a redistribution substrate on the first lower stack, a redistribution connector electrically connecting the substrate to the redistribution substrate, a first upper stack on the redistribution substrate and including first upper semiconductor chips, a first upper connector electrically connecting the redistribution substrate to the first upper stack, a second upper stack horizontally spaced apart from the first upper stack and including second upper semiconductor chips, and a second upper connector electrically connecting the redistribution substrate to the second upper stack may be provided. The redistribution connector may be on one side of the redistribution substrate. The first upper connector may be on one side of the first upper stack. The second upper connector may be on one side of the second upper stack.

Electronic device package technology is disclosed. An electronic device package in accordance with the present disclosure can include a substrate, a plurality of electronic components in a stacked relationship, and an encapsulant material encapsulating the electronic components. Each of the electronic components can be electrically coupled to the substrate via a wire bond connection and spaced apart from an adjacent electronic component to provide clearance for the wire bond connection. The encapsulant can be disposed between center portions of adjacent electronic components. Associated systems and methods are also disclosed.

A light emitting display apparatus includes a first substrate including pixels and signal lines arranged in a first direction and a second substrate disposed on a rear surface of the first substrate, wherein a routing portion including routing lines is provided in a first lateral surface of the first substrate and a second lateral surface of the second substrate. In the first substrate, a first pad portion adjacent to the first lateral surface includes first pads connected to the signal lines and the routing lines, a first secondary pad provided between the first pads, and a first connection line provided to overlap the first pads and the first secondary pad. In the second substrate, a second pad portion adjacent to the second lateral surface includes second pads connected to the routing lines, a second secondary pad provided between the second pads, and a second connection line provided to overlap the second pads and the second secondary pad. The routing portion includes a secondary routing line connecting the first secondary pad to the second secondary pad.

A semiconductor device, having a substrate including an insulating plate and a circuit board provided on a front surface of the insulating plate. The circuit board has a first disposition area and a second disposition area with a gap therebetween, and a groove portion, of which a longitudinal direction is parallel to the gap, formed in the gap. The semiconductor device further includes a first semiconductor chip and a second semiconductor chip located on the circuit board in the first disposition area and the second disposition area, respectively, and a blocking member located in the gap across the groove portion in parallel to the longitudinal direction in a plan view of the semiconductor device.

A semiconductor storage device includes a memory transistor and a word line connected to a gate electrode of the memory transistor. When a write sequence is interrupted before a k+1.sup.th verification operation is ended after a k.sup.th verification operation is ended in the n.sup.th write loop of the write sequence, a voltage equal to or higher than a verification voltage corresponding to a first verification operation in the n.sup.th write loop is supplied to the word line before start of the k+1.sup.th verification operation after resumption of the write sequence. A time from the resumption of the write sequence to the start of the k+1.sup.th verification operation is shorter than a time from start of the first verification operation to end of the k.sup.th verification operation in the n.sup.th write loop.

A power module including at least one substrate, a housing arranged on the at least one power substrate, a first terminal electrically connected to the at least one power substrate, a second terminal including a contact surface, a third terminal electrically connected to the at least one power substrate, a plurality of power devices arranged on and connected to the at least one power substrate, and the third terminal being electrically connected to at least one of the plurality of power devices. The power module further including a base plate and a plurality of pin fins arranged on the base plate and the plurality of pin fins configured to provide direct cooling for the power module.

Evaluation board (EVB) assemblies or stacks utilized in tuning electronic modules are disclosed, as are methods for tuning such modules. In embodiments, the module testing assembly includes an EVB and an EVB baseplate. The EVB includes, in turn, an EVB through-port extending from a first EVB side to a second, opposing EVB side; and a module mount region on the first EVB side and extending about a periphery of the EVB through-port. The module mount region is shaped and sized to accommodate installation of a sample electronic module provided in a partially-completed, pre-encapsulated state fabricated in accordance with a separate thermal path electronic module design. A baseplate through-port combines with the EVB through-port to form a tuning access tunnel providing physical access to circuit components of the sample electronic module through the EVB baseplate from the second EVB side when the sample electronic module is installed on the module mount region.

An object is to provide a technique capable of improving the power efficiency of a semiconductor device. The semiconductor device includes first to sixth parallel connection bodies, each including a semiconductor switching element and a diode connected in antiparallel to the semiconductor switching element. At least one of the voltage drops of the second parallel connection body and the third parallel connection body is smaller than a voltage drop of at least one of the first parallel connection body, the fourth parallel connection body, the fifth parallel connection body, and the sixth parallel connection body.

A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.