A semiconductor package including a package substrate with an upper surface, a controller, and a die stack. The controller and the die stack are at the upper surface. The die stack includes a shingled sub-stack of semiconductor dies, a reverse-shingled sub-stack of semiconductor dies, and a bridging chip. The bridging chip is bonded between the shingled sub-stack and the reverse-shingled sub-stack, and has an internal trace. A first wire segment is bonded between the controller and a first end of the bridging chip, and a second wire segment is bonded between a second end of the bridging chip and each semiconductor die of the shingled sub-stack. The internal trace electrically couples the first and second wire segments. Additionally, a third wire segment is bonded between the controller and each semiconductor die of the reverse-shingled sub-stack.

The present disclosure provides a semiconductor device package. The semiconductor device package includes a substrate, a first module disposed on the substrate, a second module disposed on the substrate and spaced apart from the first module, and a conductive element disposed outside of the substrate and configured to provide a signal transmission path between the first module and the second module.

An upper conductor portion having a thickness A larger than a thickness B of a lower conductor portion, the upper conductor portion including a circuit pattern on which semiconductor chips are disposed and an outer peripheral pattern provided on an outer peripheral side of the circuit pattern at a certain gap, the outer peripheral pattern of the upper conductor portion, an outer peripheral portion of an insulating layer, and an outer peripheral portion of the lower conductor portion are fixed to a concave portion formed in the inner peripheral portion of the peripheral wall portion of a case, a collar portion projecting outward from the outer peripheral portion of the peripheral wall portion of the case is formed, and the attachment holes, through which the radiation fins are attachable, are formed in the collar portion.

The present disclosure provides a semiconductor device package. The semiconductor device package includes a substrate, a first module disposed on the substrate, a second module disposed on the substrate and spaced apart from the first module, and a conductive element disposed outside of the substrate and configured to provide a signal transmission path between the first module and the second module.

A magnetic field sensor package comprises a chip carrier, a magnetic field sensor which is arranged on the chip carrier and designed to detect a magnetic field, an integrated circuit which is arranged on the chip carrier and designed to logically process sensor signals provided by the magnetic field sensor, and at least one integrated passive component which is electrically coupled to at least one of the magnetic field sensor or the integrated circuit.

A multiple-path amplifier (e.g., a Doherty amplifier) includes a semiconductor die, a radio frequency (RF) signal input terminal, a combining node structure integrally formed with the semiconductor die, and first and second amplifiers (e.g., main and peaking amplifiers) integrally formed with the die. Inputs of the first and second amplifiers are electrically coupled to the RF signal input terminal. A plurality of wirebonds is connected between an output of the first amplifier and the combining node structure. An output of the second amplifier is electrically coupled to the combining node structure (e.g., through a conductive path with a negligible phase delay). A phase delay between the outputs of the first and second amplifiers is substantially equal to 90 degrees. The second amplifier may be divided into two amplifier portions that are physically located on opposite sides of the first amplifier.

A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a first side surface located on one side of a first direction, a second side surface located on the other side of the first direction, and third and fourth side surfaces that are separated from each other in a second direction orthogonal to both a thickness direction and the first direction and are connected to the first and second side surfaces. A first gate mark having a surface roughness larger than the other regions of the third side surface is formed on the third side surface. When viewed along the second direction, the first gate mark overlaps a pad gap provided between the first die pad and the second die pad in the first direction.

Semiconductor device packages may include a die-attach pad and a semiconductor die supported above the die-attach pad. A spacer comprising an electrically conductive material may be supported above the semiconductor die or between the semiconductor die and the die-attach pad. A wire bond may extend from a bond pad on an active surface of the semiconductor die to the spacer. Another wire bond may extend from the spacer to a lead finger or the die-attach pad. An encapsulant material may encapsulate the semiconductor die, the spacer, the wire bond, the other wire bond, the die-attach pad, and a portion of any lead fingers.

A physical quantity sensor includes a sensor element (acceleration sensor element) and a substrate (package) to which the sensor element is attached using a bonding material (resin adhesive), in which, when an elastic modulus of the bonding material is e, 2.0 GPa<e<7.8 GPa is satisfied.

A physical quantity sensor includes a sensor element (acceleration sensor element) and a substrate (package) to which the sensor element is attached using a bonding material (resin adhesive), in which, when an elastic modulus of the bonding material is e, 2.0 GPa<e<7.8 GPa is satisfied.