A mechanism is provided to reduce noise effects on signals traversing bond wires of a SOC by forming a bond wire ring structure that decreases mutual inductance and capacitive coupling. Bond wires form the ring structure in a daisy chain connecting isolated ground leads at a semiconductor device package surrounding the semiconductor device. This structure reduces out-of-plane electromagnetic field interference generated by signals in lead wires, as well as mutual capacitance and mutual inductance.

An improvement is achieved in the reliability of a semiconductor device. After a resin sealing portion is formed to seal a die pad, a semiconductor chip mounted over the die pad, a plurality of leads, and a plurality of wires electrically connecting a plurality of pad electrodes of the semiconductor chip with the leads, the resin sealing portion and the leads are cut with a rotary blade to manufacture the semiconductor device. In the semiconductor device, at least a portion of each of first and second leads is exposed from a lower surface of the sealing portion. End surfaces of the first and second leads as the respective cut surfaces thereof are exposed from each of side surfaces of the sealing portion as the cut surfaces of the resin sealing portion. The distance between a lower side of the end surface of the first lead and an upper surface of the sealing portion is smaller than the distance between an upper side of the end surface of the second lead adjacent thereto and the upper surface of the sealing portion.

An electronic component, in one embodiment, includes a semiconductor die, a die pad supporting the semiconductor die, and a plurality of leads that include a first set of metal lines and a second set of metal lines. The first set of metal lines cross over the second set of metal lines at crossings. The first set of metal lines is separated by a molding compound from the second set of metal line at the crossings. The first set of metal lines is in a same first plane parallel to the semiconductor die. Each of the second set of metal lines include a first portion oriented along the first set of metal lines and disposed in the first plane, and a second portion offset from the first portion. A plurality of electrical connections couple the semiconductor die to the plurality of leads.

A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

An integrated circuit (IC) package with stacked die wire bond connections has two stacked IC dies, where a first die couples to a metallization structure directly and a second die stacked on top of the first die connects to the metallization structure through wire bond connections. The IC dies are coupled to one another through an interior metal layer of the metallization structure. Vias are used to couple to the interior metal layer.

The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor chip having a first main surface including an active region and a peripheral region surrounding the active region; a first trench formed in the active region; a first insulating film formed on an inner surface of the first trench; a first electrode formed in the first trench interfacing the first insulating film, and forming a channel in a portion of the semiconductor chip facing the first insulating film; a second trench formed in the peripheral region and having a width greater a width of the first trench; a second insulating film formed on an inner surface of the second trench; and a second electrode formed in the second trench interfacing the second insulating film and electrically coupled to the first electrode.

A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.

A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.

A sensor chip package assembly and an electronic device having the sensor chip package assembly are disclosed, where the sensor chip package assembly includes: a metal substrate (100) which has a bonding pad region (11) and a placement region (12), the bonding pad region having a plurality of metal bonding pads (13); a sensor chip (200) which is located on an upper surface of the metal substrate, and the sensor chip having a plurality of sensor chip bonding pads (21); an electrical connection assembly (300) which electrically connects a metal bonding pad and a sensor chip bonding pad; and a packaging material cover (400) which covers the metal substrate, the sensor chip and the electrical connection assembly, where any two adjacent metal bonding pads are spaced in an insulated manner by the packaging material cover.