A semiconductor power module including an insulating substrate having one surface and another surface, an output side terminal arranged at a one surface side of the insulating substrate, a first power supply terminal arranged at the one surface side of the insulating substrate, a second power supply terminal to which a voltage of a magnitude different from a voltage applied to the first power supply terminal is to be applied, and arranged at another surface side of the insulating substrate so as to face the first power supply terminal across the insulating substrate, a first switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the first power supply terminal, and a second switching device arranged at the one surface side of the insulating substrate and electrically connected to the output side terminal and the second power supply terminal.

A semiconductor device includes a first semiconductor chip including an output electrode portion on a front surface thereof, the output electrode portion including a plurality of electrode regions, each of which is provided at a respective position of the output electrode portion, and a plurality of wires, each electrode region being connected to a different one or more wires among the plurality of wires, through which a respective amount of output current is output. A total number of the different one or more wires connected to each electrode region is set depending on the respective position of the electrode region of the output electrode portion, so that the electrode region has a respective current amount per wire that is equal to or less than a respective predetermined value.

Embodiments of a device and method are disclosed. In an embodiment, an RF amplifier includes first and second RF signal paths having RF input interfaces, RF output interfaces, and corresponding transistors connected between the respective RF input interfaces and RF output interfaces, wherein control terminals of the transistors are connected to the RF input interfaces and current conducting terminals of the transistors are connected to the corresponding RF output interfaces. The RF amplifier including a conductive path between the current conducting terminal of the first transistor and the current conducting terminal of the second transistor, wherein the conductive path includes a first inductance, a second inductance, and a capacitance electrically connected between the first inductance and the second inductance.

A semiconductor device includes an insulating support member, a first and a second conductive layer, a first semiconductor element, a first lead, a first detection conductor and a first gate conductor. The first and second conductive layers are disposed on a front surface of the insulating support member. The first semiconductor includes a first and a second electrode on the same side, and a third electrode disposed on the other side and electrically connected to the first conductive layer. The first lead is connected to the first and second conductive layer. The first detection conductor is connected to the first electrode. The first gate conductor is connected to the second electrode. At least one of the first detection conductor and the first gate conductor has an end connected to the first semiconductor element. The end has a coefficient of linear expansion smaller than that of the first conductive layer.

A semiconductor device includes an upper switching element, a lower switching element, an upper capacitor, and a lower capacitor. The upper switching element is formed by a wide-gap semiconductor and includes a first upper terminal, a second upper terminal, and an upper control terminal. The lower switching element is formed by a wide-gap semiconductor and includes a first lower terminal, a second lower terminal, and a lower control terminal. The upper capacitor is provided between the first upper terminal and the upper control terminal separately from the upper switching element. The lower capacitor is provided between the first lower terminal and the lower control terminal separately from the lower switching element. The second upper terminal and the first lower terminal are electrically connected.

Embodiments of a device and method are disclosed. In an embodiment, an RF amplifier includes first and second RF signal paths having RF input interfaces, RF output interfaces, and corresponding transistors connected between the respective RF input interfaces and RF output interfaces, wherein control terminals of the transistors are connected to the RF input interfaces and current conducting terminals of the transistors are connected to the corresponding RF output interfaces. The RF amplifier including a conductive path between the current conducting terminal of the first transistor and the current conducting terminal of the second transistor, wherein the conductive path includes a first inductance, a second inductance, and a capacitance electrically connected between the first inductance and the second inductance.

A semiconductor module is obtained in which breakage of the semiconductor module can be detected in advance while suppressing increase in manufacturing cost. A semiconductor module includes a semiconductor element, a circuit board, a resistor, a first wiring member, and a detector. The circuit board includes a circuit pattern. The resistor is connected to a surface of the circuit pattern. The first wiring member directly connects the resistor to the semiconductor element. In the first wiring member, at least part of current flowing from the semiconductor element to the circuit pattern flows. The detector is configured to detect at least one of a change of a voltage drop value in the resistor and a change of a current value in the resistor.

A lead frame includes a lead portion having a first surface and a second surface, a connecting bar that has a first surface and a second surface and to which the lead portion is connected, and a raised portion provided on the first surface of the connecting bar. The first surface of the connecting bar is positioned between the first and the second surfaces of the lead portion. The tip of the raised portion is positioned between the first surface of the lead portion and the first surface of the connecting bar.

An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

A semiconductor package is configured to include a package substrate, a semiconductor chip disposed on the package substrate, and bonding wires. The package substrate includes a first column of bond fingers disposed in a first layer and a second column of bond fingers disposed in a second layer. The semiconductor chip includes a first column of chip pads arrayed in a first column and a second column of chip pads arrayed in a second column adjacent to the first column. The first column of chip pads are connected to the first column of bond fingers, respectively, through first bonding wires, and the second column of chip pads are connected to the second column of bond fingers, respectively, through second bonding wires.