A bonding apparatus for bonding a driving circuit to a display panel includes: a bonding stage unit on which the display panel is supported in bonding the driving circuit to the display panel; a head unit located above the bonding stage unit and with which ultrasonic waves are applied to the driving circuit to couple the driving circuit with a bonding area of the display panel supported on the bonding stage unit; and a protrusion disposed at an edge portion of the bonding stage unit, the edge portion corresponding to an end of the display panel at which the bonding area is disposed.

A semiconductor tool and methods of forming semiconductor device assemblies. The semiconductor tool is a bond tip having a vacuum port and a plurality of purge ports with channels coupling the vacuum port with the purge ports. Air may be withdrawn through the vacuum to create a vacuum on the bottom of the bond tip to selectively couple a semiconductor device with the bond tip. The bond tip positions the semiconductor device on top of a stack of semiconductor devices to form a semiconductor device assembly. The assembly may be heated to reflow interconnects between the semiconductor device and the top device of the stack of semiconductor devices. Fluid provided through the purge ports may help to counter warpage of the semiconductor device to help form adequate interconnects between the devices. Fluid may also be provided through the vacuum port to counter the warpage.

A bonding apparatus for bonding a driving circuit to a display panel includes: a bonding stage unit on which the display panel is supported in bonding the driving circuit to the display panel; a head unit located above the bonding stage unit and with which ultrasonic waves are applied to the driving circuit to couple the driving circuit with a bonding area of the display panel supported on the bonding stage unit; and a protrusion disposed at an edge portion of the bonding stage unit, the edge portion corresponding to an end of the display panel at which the bonding area is disposed.

According to one embodiment, in a semiconductor manufacturing apparatus, a controller relatively moves a bonding tool and a stage close to each other while causing a semiconductor chip to adhere by suction to a surface via a tape using at least a first suction structure in a first period. In a second period, the controller controls the temperature of the bonding tool to a first target temperature while keeping substantially equal to a target pressure a pressure applied to the semiconductor chip by the bonding tool. In a third period, the controller controls a relative distance between the bonding tool and the stage so that the pressure applied to the semiconductor chip by the bonding tool is kept equal to the target pressure and controls the temperature of the bonding tool to a second target temperature. The second target temperature is higher than the first target temperature.

A semiconductor device die transfer apparatus includes a first frame to hold a wafer tape having a plurality of semiconductor device die disposed on a side of the wafer tape and a second frame to secure a product substrate having a circuit trace thereon. The second frame is configured to secure the product substrate such that the circuit trace is disposed facing the plurality of semiconductor device die on the wafer tape. Additionally, a rotary transfer collet is disposed between the wafer tape and the product substrate. The rotary transfer collet has a rotational axis allowing rotation from a first position facing the wafer tape to pick a die of the plurality of semiconductor device die to a second position facing the circuit trace on the product substrate to release the die, thereby applying the die directly on the product substrate during a transfer operation.

A die placement and coupling apparatus may include a die bonding attachment. The die placement and coupling apparatus may include a compliant head unit that may be adapted to optionally couple with a semiconductor die. The compliant head unit may include a die attach surface that may include a layer of compliant material. The layer of compliant material may be coupled to the compliant head unit. The die attach surface may be adapted to mate with the semiconductor die when the semiconductor die is coupled with the compliant head unit. The layer of compliant material may be adapted to yield in response to an applied force. The die placement and coupling apparatus may include a vacuum port in communication with the die attach surface. The port may be adapted to have a vacuum applied to the port, and the vacuum temporarily holds the semiconductor die to the die attach surface.

A die placement and coupling apparatus may include a die bonding attachment. The die placement and coupling apparatus may include a compliant head unit that may be adapted to optionally couple with a semiconductor die. The compliant head unit may include a die attach surface that may include a layer of compliant material. The layer of compliant material may be coupled to the compliant head unit. The die attach surface may be adapted to mate with the semiconductor die when the semiconductor die is coupled with the compliant head unit. The layer of compliant material may be adapted to yield in response to an applied force. The die placement and coupling apparatus may include a vacuum port in communication with the die attach surface. The port may be adapted to have a vacuum applied to the port, and the vacuum temporarily holds the semiconductor die to the die attach surface.

An industrial-scale apparatus, system, and method for handling precisely aligned and centered semiconductor wafer pairs for wafer-to-wafer aligning and bonding applications includes an end effector having a frame member and a floating carrier connected to the frame member with a gap formed therebetween, wherein the floating carrier has a semi-circular interior perimeter. The centered semiconductor wafer pairs are positionable within a processing system using the end effector under robotic control. The centered semiconductor wafer pairs are bonded together without the presence of the end effector in the bonding device.

A method for bonding a semiconductor package includes loading a semiconductor chip on a substrate, and bonding the semiconductor chip to the substrate by using a bonding tool, the bonding tool including a pressing surface for pressing the semiconductor chip, and an inclined surface extending from one side of the pressing surface. Bonding the semiconductor chip to the substrate includes deforming a bonding agent disposed between the substrate and the semiconductor chip by pressing the bonding tool, and deforming the bonding agent includes generating a fillet by protruding a portion of the bonding agent beyond the semiconductor chip, and growing the fillet in such a way that a top surface of the fillet is grown in an extending direction of the inclined surface.

One embodiment includes a method for manufacturing an electronic apparatus, including bonding an integrated circuit (IC) die to a substrate to form an IC package using a first reflow process, which causes the substrate to warp, reversibly connecting a lid with the IC package over the IC die so that the lid applies a force to the IC die, providing a printed circuit board (PCB) including an array of first contact pads, respectively disposing an array of bonding elements on an array of second contact pads of the substrate, placing the IC package on to the PCB with respective ones of the bonding elements contacting respective ones of the first contact pads, performing a second reflow process to apply heat to the bonding elements to bond the first contact pads with the second contact pads, and removing the lid from the IC package after the second reflow process.